Search Results - "Gertner, E R"

Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors by McDermott, B. T., Gertner, E. R., Pittman, S., Seabury, C. W., Chang, M. F.

“…GaAsSb is a low band gap, lattice matched to InP, alternative to GaInAs. Growth and doping using diethyltellurium and carbon tetrachloride were investigated…”
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Material characteristics of metalorganic chemical vapor deposition Hg1-xCdxTE/GaAs/Si by EDWALL, D. D, BAJAJ, J, GERTNER, E. R

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p‐type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular‐beam epitaxy by Arias, J. M., Shin, S. H., Cooper, D. E., Zandian, M., Pasko, J. G., Gertner, E. R., DeWames, R. E., Singh, J.

“…In this paper we report on p‐type arsenic doping of CdTe and HgTe/CdTe superlattices by photoassisted and conventional molecular‐beam epitaxy (MBE). We also…”
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P-type doping of double layer mercury cadmium telluride for junction formation by BUBULAC, L. O, EDWALL, D. D, IRVINE, S. J. C, GERTNER, E. R, SHIN, S. H

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Infrared diodes fabricated with HgCdTe grown by molecular beam epitaxy on GaAs substrates by ARIAS, J. M, DEWAMES, R. E, SHIN, S. H, PASKO, J. G, CHEN, J. S, GERTNER, E. R

“…Infrared photodiodes fabricated with HgCdTe epilayers grown on GaAs substrates by molecular beam epitaxy (MBE) are reported here for the first time. Growth was…”
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Variable temperature Hall effect on p-Hg1-XCdXTe grown on CdTe and sapphire substrates by liquid phase epitaxy by EDWALL, D. D, GERTNER, E. R, TENNANT, W. E

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Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy by Bell, L. D., Smith, R. P., McDermott, B. T., Gertner, E. R., Pittman, R., Pierson, R. L., Sullivan, G. J.

“…Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to investigate the properties of Au/GaN interfaces. The effects of in situ and ex…”
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Epitaxial Mercury Cadmium Telluride by Gertner, E R

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Ion Implantation Study of HgCdTe by Bubulac, L. O., Tennant, W. E., Shin, S. H., Wang, C. C., Lanir, M., Gertner, E. R., Marshall, E. D.

“…Light atom species, such as Li, Mg, B, Be, Cl, F and Al implanted in bulk and epitaxial HgCdTe of compositions from 3 to 12 µm cut-off yielded n/p junctions…”
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Metal/GaN Schottky barriers characterized by ballistic-electron-emission microscopy and spectroscopy by Bell, L. D., Smith, R. P., McDermott, B. T., Gertner, E. R., Pittman, R., Pierson, R. L., Sullivan, G. J.

“…Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to characterize the Pd/GaN and Au/GaN interfaces. BEEM spectra yield a Schottky…”
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Ballistic-electron-emission microscopy and spectroscopy of metal/GaN interfaces by Bell, L. D., Smith, R. P., McDermott, B. T., Gertner, E. R., Pittman, R., Pierson, R. L., Sullivan, G. J.

“…Ballistic-electron-emission microscopy (BEEM) spectroscopy and imaging have been applied to the Au/GaN interface. In contrast to previous BEEM measurements,…”
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Study of microinhomogeneities in midwave infrared mercury cadmium telluride grown by metalorganic chemical vapor deposition‐interdiffused multilayer process onto GaAs and GaAs/Si substrates by Irvine, S. J. C., Edwall, D. D., Bubulac, L. O., Gil, R. V., Gertner, E. R.

“…The causes for variations in quantum efficiency (QE) for boron‐implanted midwave infrared diodes formed in mercury cadmium telluride on CdTe buffered GaAs/Si…”
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Infrared photodiodes fabricated with Hg1-xCdxTe grown by molecular beam epitaxy by ARIAS, J. M, SHIN, S. H, PASKO, J. G, GERTNER, E. R

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Backside-illuminated InAsSb/GaSb broadband detectors by Bubulac, L. O., Andrews, A. M., Gertner, E. R., Cheung, D. T.

“…This letter reports the achievement of a high-performance, broad-spectral-band infrared detector with the InAs1−xSbx alloy system using a backside-illuminated…”
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Magnetization of the Superconducting Sheath by Joseph, A. S., Thorsen, A. C., Gertner, E. R., Savage, J. W.

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High performance photovoltaic infrared devices in Hg1-xCdxTe on sapphire by REIDEL, R. A, GERTNER, E. R, EDWALL, D. D, TENNANT, W. E

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Backside−illuminated Pb1−xSnxTe heterojunction photodiode by Andrews, A. M., Longo, J. T., Clarke, J. E., Gertner, E. R.

“…The need for a long−wavelength infrared detector that makes more efficient use of the available radiation has led us to construct a backside−illuminated…”
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VIC-2 high performance photodiodes of mercury cadmium telluride (HgCdTe) on sapphire by Sheng, N.H., Gertner, E.R., Ridel, R.A., Edwall, D.D., Wood, L.E., Tennant, W.E.

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p‐type doping of metalorganic chemical vapor deposition‐grown HgCdTe by arsenic and antimony by Edwall, D. D., Bubulac, L. O., Gertner, E. R.

“…Extensive data are presented on the arsenic doping characteristics of Hg1−x Cd x Te layers grown by metalorganic chemical vapor deposition using the dopant…”
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Cathodoluminescence of HgCdTe and CdTe on CdTe and sapphire by Bubulac, L. O., Tennant, W. E., Edwall, D. D., Gertner, E. R., Robinson, J. C.

“…The imaging cathodoluminescence capability of a scanning electron microscope (SEM) was complemented by etch pit (EP) measurements and secondary ion mass…”
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