Search Results - "Gert, A. V."

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  1. 1

    Diffusion of minority carriers against electric field (high injection level) by Gert, A. V., Dmitriev, A. P., Levinshtein, M. E., Yuferev, V. S., Palmour, J. W.

    Published in Applied physics letters (13-11-2017)
    “…A one-dimensional analytic model describing the motion of minority carriers against the electric field direction under the conditions of high injection level…”
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    Journal Article
  2. 2

    Lattice deformation in silicon and germanium nanocrystals by Gert, A. V., Prokofiev, A. A., Yassievich, I. N.

    “…We present a theoretical study of lattice deformation and its influence on the electronic states and the optical transitions in Si and Ge nanocrystals covered…”
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  3. 3

    Role of surface self-trapped excitons in the energy relaxation of photoexcited silicon nanocrystals by Gert, A. V., Yassievich, I. N.

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2015)
    “…A new mechanism of the energy relaxation of hot charge carriers in silicon nanocrystals embedded in the SiO 2 matrix is suggested. Effective energy exchange…”
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  4. 4

    Effective Hamiltonian of silicene in the presence of electric and magnetic fields by Gert, A. V., Nestoklon, M. O., Yassievich, I. N.

    “…An effective Hamiltonian of silicene in the neighborhood of Dirac points in the presence of electric and magnetic fields perpendicular to the plane of the film…”
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  5. 5

    Tight-binding simulation of silicon and germanium nanocrystals by Gert, A. V., Nestoklon, M. O., Prokofiev, A. A., Yassievich, I. N.

    Published in Semiconductors (Woodbury, N.Y.) (01-10-2017)
    “…This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods…”
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  6. 6

    Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence by Andreev, B. A., Yablonskiy, A. N., Krasilnik, Z. F., Ershov, A. V., Grachev, D. A., Gert, A. V., Gusev, O. B., Yassievich, I. N.

    “…The intensive photoluminescence (PL) band corresponding to the self‐trapped excitons (STEs) at surface Si–Si dimers has been observed for the multilayer…”
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  7. 7

    Radiative and nonradiative recombination of self-trapped exciton on silicon nanocrystal interface by Gert, A. V., Yassievich, I. N.

    Published in JETP letters (01-03-2013)
    “…The theory of the multiphonon and radiative recombination of a self-trapped exciton on the interface of a silicon nanocrystal in a SiO 2 matrix is developed…”
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  8. 8

    Band structure of silicene in the tight binding approximation by Gert, A. V., Nestoklon, M. O., Yassievich, I. N.

    “…The electronic structure of silicene is simulated by the tight binding method with the basis sp 3 d 5 s *. The results are in good agreement with ab initio…”
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  9. 9

    Nonlinear screening and charge redistribution in periodically doped graphene by Baryshnikov, K. A, Gert, A. V, Vasilyev, Yu. B, Dmitriev, A. P

    Published 23-07-2024
    “…The screening problem for the Coulomb potential of a charge located in a two-dimensional (2D) system has an intriguing solution with a power law distance…”
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  10. 10