Search Results - "Gerlich, L."

Cobalt advanced barrier metallization: A resistivity composition analysis by Wislicenus, M., Liske, R., Gerlich, L., Vasilev, B., Preusse, A.

“…[Display omitted] •MOCVD Co films as Cu seed replacement are deposited using CCTBA precursor.•Impact of different film properties on cobalt resistivity is…”
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Traditional thromboprophylaxis in elderlies with atrial fibrillation: What we can achieve in real life by Dubrava, M, Nemeth, F, Drobna, T, Gerlich, L

“…OBJECTIVESTo investigate real-world data on warfarinisation rates and results in the elderly patients with atrial fibrillation (AF). BACKGROUNDAF is the most…”
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BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms by Wehring, B., Hoffmann, R., Gerlich, L., Czernohorsky, M., Uhlig, B., Seidel, R., Barchewitz, T., Schlaphof, F., Meinshausen, L., Leyens, C.

“…We used electrical characterization as well as surface analytical methods to understand leakage behavior and breakdown mechanisms of three different interlayer…”
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Gesture recognition for control of rehabilitation robots by Gerlich, L., Parsons, B. N., White, A. S., Prior, S., Warner, P.

“…This paper describes the development of a control user interface for a wheelchair-mounted manipulator for use by severely disabled persons. It explains the…”
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Interface engineering for the TaN/Ta barrier film deposition process to control Ta-crystal growth by Gerlich, Lukas, Ohsiek, Susanne, Klein, Christoph, Geiß, Mario, Friedemann, Michael, Kücher, Peter, Schmeißer, Dieter

“…[Display omitted] As a consequence of device shrinking the resistivity of the widely used TaN/Ta double barrier layer becomes an increasingly important…”
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Ultrathin TaN/Ta barrier modifications to fullfill next technology node requirements by Gerlich, L., Ohsiek, S., Klein, C., Geiss, M., Friedemann, M., Kucher, P., Schmeisser, D.

“…A physical vapor deposition tool for 300 mm wafers was coupled with an angle resolved photoelectron spectroscopy tool (ARXPS) and used to study the growth of…”
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Electrical property improvements of ultra low-k ILD using a silylation process feasible for process integration by Thomas, O., Schaller, M., Gerlich, L., Fischer, D., Leppack, S., Bartsch, C., Schulz, S. E.

“…In this paper the effect of a vapor phase based silylation process on patterned test structures using ULK based ILD's was investigated. It was found that the…”
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Thermal ALD of Cu via reduction of CuxO films for the advanced metallization in spintronic and ULSI interconnect systems by Mueller, S., Waechtler, T., Hofmann, L., Tuchscherer, A., Mothes, R., Gordan, O., Lehmann, D., Haidu, F., Ogiewa, M., Gerlich, L., Shao-Feng Ding, Schulz, S. E., Gessner, T., Lang, H., Zahn, D. R. T., Xin-Ping Qu

“…In this work, an approach for copper atomic layer deposition (ALD) via reduction of Cu x O films was investigated regarding applications in ULSI interconnects,…”
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