Threading dislocation density characterization in III–V photovoltaic materials by electron channeling contrast imaging

Accurate and rapid threading dislocation density (TDD) characterization of III–V photovoltaic materials using electron channeling contrast imaging (ECCI) is demonstrated. TDDs measured using ECCI showed close agreement with those from electron beam-induced current mapping (EBIC) and defect selective...

Full description

Saved in:

Bibliographic Details
Published in:	Journal of crystal growth Vol. 453; pp. 65 - 70
Main Authors:	Yaung, Kevin Nay, Kirnstoetter, Stefan, Faucher, Joseph, Gerger, Andy, Lochtefeld, Anthony, Barnett, Allen, Lee, Minjoo Larry
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-11-2016
Subjects:	A1. Characterization A1. Defects A3. Molecular beam epitaxy B2. Semiconducting III–V materials B3. Solar cells A3. Molecular beam epitaxy A1. Characterization B3. Solar cells B2. Semiconducting III–V materials A1. Defects
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	Accurate and rapid threading dislocation density (TDD) characterization of III–V photovoltaic materials using electron channeling contrast imaging (ECCI) is demonstrated. TDDs measured using ECCI showed close agreement with those from electron beam-induced current mapping (EBIC) and defect selective etching (DSE). ECCI is shown to be well-suited for measuring TDD values over a range of ~5×106–5×108cm−2. ECCI can distinguish individual dislocations in clusters closer than 0.2µm, highlighting its excellent spatial resolution compared to DSE and EBIC. Taken together, ECCI is shown to be a versatile and complementary method to rapidly quantify TDD in III–V solar cells. •Accurate TDD quantification is important for metamorphic III–V solar cells.•ECCI measures TDD values over a wide range from ~5×106–5×108cm−2.•ECCI is useful for dislocations in clusters closer than 0.2µm.•Comparison of TDD in ECCI with both EBIC and DSE show close agreement.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2016.08.015