Search Results - "Gentner, J.L"

Longitudinal mode selection in constricted photonic crystal guides and electrically injected lasers by de Rossi, S., Sagnes, I., Legratiet, L., Talneau, A., Berrier, A., Mulot, M., Anand, S., Gentner, J.L.

“…Locally reducing the width of a wide photonic crystal (PhC) waveguide generates a constriction which acts as an internal reflector. We have simulated and…”
Get full text

Wavelength stabilized single-mode lasers by coupled micro-square resonators by Bach, L., Reithmaier, J.P., Forchel, A., Gentner, J.L., Goldstein, L.

“…Wavelength stabilized single-mode lasers were realized by on-chip coupling of a ridge waveguide laser with two micro-ring resonators. The micro-ring resonators…”
Get full text

Monolithically integrated tunable laterally coupled distributed-feedback lasers by Schreiner, R., Nagele, P., Korbl, M., Groning, A., Gentner, J.L., Schweizer, H.

“…A new method for fabrication of tunable InGaAsP-InP single-mode lasers without epitaxial overgrowth is reported. These devices show the advantage of a…”
Get full text

Nanoscale patterning by focused ion beam enhanced etching for optoelectronic device fabrication by Rennon, S., Bach, L., König, H., Reithmaier, J.P., Forchel, A., Gentner, J.L., Goldstein, L.

“…A technique for highly resolved maskless patterning is obtained by combining focused ion beam lithography with wet chemical etching. When exposing InP to a…”
Get full text

Accurate tuning of emission of GaInAsP/InP heterostructures in multiwafer gas-source molecular-beam epitaxy by Lelarge, F., Gaborit, F., Gentner, J.L.

“…Photoluminescence wavelength emission of Ga x In 1− x As y P 1− y /InP heterostructures grown in multiwafer gas-source molecular-beam epitaxy (GSMBE) is…”
Get full text

Laterally coupled DBR laser emitting at 1.55 [mu]m fabricated by focused ion beam lithography by Bach, L, Rennon, S, Reithmaier, J.P, chel, A, Gentner, J.L, Goldstein, L

Get full text

GSMBE growth of GaInAsP/InP 1.3 μm-TM-lasers for monolithic integration with optical waveguide isolator by Lelarge, F., Dagens, B., Cuisin, C., Le Gouezigou, O., Patriarche, G., Van Parys, W., Vanwolleghem, M., Baets, R., Gentner, J.L.

“…The GSMBE growth of GaInAsP/InP 1.3-μm-TM active core and highly p-doped contacting layers required for fabricating an integrated optical waveguide isolator is…”
Get full text

Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers by Grillot, F., Thedrez, B., Gauthier-Lafaye, O., Martineau, M.F., Voiriot, V., Lafragette, J.L., Gentner, J.L., Silvestre, L.

“…The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-μm antireflection/high reflection…”
Get full text

Comparative collector design in InGaAs and GaAsSb based InP DHBTs by Nodjiadjim, V., Riet, M., Scavennec, A., Berdaguer, P., Gentner, J.L., Godin, J., Bove, P., Lijadi, M.

“…In this paper we compare the base-collector transit time of GaAsSb- and InGaAs-based double heterojunction bipolar transistors (DHBT) at low and high collector…”
Get full text

Coherence-collapse threshold of 1.3-[mu]m semiconductor DFB lasers by Grillot, F, Thedrez, B, Gauthier-Lafaye, O, Martineau, M.F, Voiriot, V, Lafragette, J.L, Gentner, J.L, Silvestre, L

Get full text

Laterally coupled DBR laser emitting at 1.55 μm fabricated by focused ion beam lithography by Bach, L., Rennon, S., Reithmaier, J.P., Forchel, A., Gentner, J.L., Goldstein, L.

“…By using focused ion beam lithography high performance 1.55-μm emitting distributed Bragg reflector lasers were realized suitable for high-speed optical…”
Get full text

Multiwafer gas source MBE development for InGaAsP/InP laser production by Lelarge, F., Sanchez, J.J, Gaborit, F., Gentner, J.L.

“…We studied in details the interplay between various key elements required for multiwafer gas source molecular beam epitaxy (GSMBE) such as gas cell cracking…”
Get full text

Electronic wavelength tuning of multisegment InGaAsP/InP lasers with laterally coupled absorptive DFB gratings by Körbl, M., Gröning, A., Schweizer, H., Gentner, J.L.

“…This paper presents the realization and performance of 1.6 μm InGaAsP/InP multichannel laser diodes for wavelength division multiplex applications. Our novel…”
Get full text

Continuous wave InGaAsP/InP Fabry-Perot lasers on silicon by Dupont, T., Grenouillet, L., Philippe, P., Perrin, M., Gilet, P., Ben Bakir, B., Fedeli, J.M., Grosse, P., Di Cioccio, L., Chelnokov, A., Lelarge, F., Pommereau, F., Duan, G.H., Gentner, J.L.

“…We present 1.55 mum InGaAsP/InP Fabry-Perot lasers on silicon realized by a die-to-wafer CMOS compatible SiO 2 /SiO 2 bonding process. The devices run under…”
Get full text

New multiwafer gas source MBE system for flexible and cost effective fabrication of GaInAsP/InP based opto-electronic devices by Lelarge, F., Gaborit, F., Gentner, J.L.

“…Wavelength emission of Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y//InP multiple quantum wells (MQW's) heterostructures -town in a multiwafer Gas Source Molecular…”
Get full text

Square- and racetrack-lasers as active components for monolithically integrated optoelectronic devices by Bach, L., Wolf, A., Reithmaier, J.P., Forchel, A., Gentner, J.L., Goldstein, L.

“…Deeply etched square and rectangular racetrack lasers with diameters from 200 /spl mu/m down to 30 /spl mu/m were fabricated by electron cyclotron resonance…”
Get full text

Two- and three-sectional laterally coupled DBR laser fabricated by focused ion beam lithography by Bach, L., Wolf, A., Reithmaier, J.P., Forchel, A., Gentner, J.L., Goldstein, L.

“…By using focused ion beam lithography, high performance 1.55 /spl mu/m emitting distributed Bragg reflector lasers were realized suitable for high speed…”
Get full text

Focused ion beam implantation for gain coupled 1.55 /spl mu/m DFB-laser diodes with improved device characteristics by Konig, H., Reithmaier, J.P., Forchel, A., Gentner, J.L., Goldstein, L.

“…Laterally gain coupled DFB lasers were fabricated by focused ion beam implantation with a new technological approach. On complete InGaAsP/InP laser structures…”
Get full text

Giant optical anisotropy in semiconductor heterostructures with no-common atom by Krebs, O., Voisin, P., Rondi, D., Gentner, J.L., Goldstein, L., Harmand, J.C.

“…Due to their reduced symmetry no-common atom heterostructures are expected to present in-plane anistropic features. We report polarization-resolved optical…”
Get full text

Dynamic measurements on narrow linewidth complex coupled 1.55 /spl mu/m DFB lasers with gain and index grating in antiphase by Schreiner, R., Mulot, M., Wiedmann, J., Coenning, W., Porsche, J., Gentner, J.L., Berroth, M., Scholz, F., Schwizer, H.

“…We report on dynamic measurements on antiphase complex coupled 1.55 /spl mu/m DFB lasers. The antiphase complex coupling mechanism is realized by periodically…”
Get full text