Search Results - "Gen Tsutsui, Gen Tsutsui"

Well-size-controlled Colloidal Gold Nanoparticles Dispersed in Organic Solvents by Gen Tsutsui, Gen Tsutsui, Shujuan Huang, Shujuan Huang, Hiroyuki Sakaue, Hiroyuki Sakaue, Shoso Shingubara, Shoso Shingubara, Takayuki Takahagi, Takayuki Takahagi

“…The preparation of well-size-controlled colloidal gold nanoparticles in organic solvent is presented. After the preparation of well-size-controlled aqueous…”
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Experimental Study on Mobility in (110)-Oriented Ultrathin-Body Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field-Effect Transistor with Single- and Double-Gate Operations by Tsutsui, Gen, Hiramoto, Toshiro

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Channel Geometry Impact and Narrow Sheet Effect of Stacked Nanosheet by Yeung, Chun Wing, Zhang, Jingyun, Chao, Robin, Kwon, Ohseong, Vega, Reinaldo, Tsutsui, Gen, Miao, Xin, Zhang, Chen, Sohn, Chang-Woo, Moon, Bum Ki, Razavieh, Ali, Frougier, Julien, Greene, Andrew, Galatage, Rohit, Li, Juntao, Wang, Miaomiao, Loubet, Nicolas, Robison, Robert, Basker, Veeraraghavan, Yamashita, Tenko, Guo, Dechao

“…The characteristics of Stacked Nanosheet are investigated, focusing on channel geometry. For the first time, "narrow sheet effect" on carrier transport is…”
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Modeling of Body Factor and Subthreshold Swing in Bulk Metal Oxide Semiconductor Field Effect Transistors in Short-Channel Regime by Putra, Arifin Tamsir, Saitoh, Masumi, Tsutsui, Gen, Hiramoto, Toshiro

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Novel High-Performance Analog Devices for Advanced Low-Power High-$k$ Metal Gate Complementary Metal--Oxide--Semiconductor Technology by Han, Jin-Ping, Shimizu, Takashi, Pan, Li-Hong, Voelker, Moritz, Bernicot, Christophe, Arnaud, Franck, Mocuta, Anda, Stahrenberg, Knut, Azuma, Atsushi, Eller, Manfred, Yang, Guoyong, Jaeger, Daniel, Zhuang, Haoren, Miyashita, Katsura, Stein, Kenneth, Nair, Deleep, Park, Jae Hoo, Kohler, Sabrina, Hamaguchi, Masafumi, Li, Weipeng, Kim, Kisang, Chanemougame, Daniel, Kim, Nam Sung, Uchimura, Sadaharu, Tsutsui, Gen, Wiedholz, Christian, Miyake, Shinich, Meer, Hans van, Liang, Jewel, Ostermayr, Martin, Lian, Jenny, Celik, Muhsin, Donaton, Ricardo, Barla, Kathy, Na, MyungHee, Goto, Yoshiro, Sherony, Melanie, Johnson, Frank S, Wachnik, Richard, Sudijono, John, Kaste, Ed, Sampson, Ron, Ku, Ja-Hum, Steegen, An, Neumueller, Walter

“…High performance analog (HPA) devices in high-$k$ metal gate (HKMG) scheme with innovative halo engineering have been successfully demonstrated to produce…”
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Self-Organized Gold Nanodots Array on a Silicon Substrate and Its Mechanical Stability by Gen Tsutsui, Gen Tsutsui, Shujuan Huang, Shujuan Huang, Hiroyuki Sakaue, Hiroyuki Sakaue, Shoso Shingubara, Shoso Shingubara, Takayuki Takahagi, Takayuki Takahagi

“…The fabrication of a self-organized two-dimensional array of gold nanodots encapsulated by alkanethiol on a silicon substrate is presented. An experimental…”
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Control of Interdot Space and Dot Size in a Two-Dimensional Gold Nanodot Array by Shujuan Huang, Shujuan Huang, Gen Tsutsui, Gen Tsutsui, Hiroyuki Sakaue, Hiroyuki Sakaue, Shoso Shingubara, Shoso Shingubara, Takayuki Takahagi, Takayuki Takahagi

“…Experimental studies on the control of the interdot space and the dot size in a self-organized two-dimensional array of gold colloidal nanoparticles…”
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Scanning Electron Microscope Observation of Heterogeneous Three-Dimensional Nanoparticle Arrays Using DNA by Takahagi, T, Tsutsui, G, Huang, S, Sakaue, H, Shingubara, S

“…DNA oligonucleotides are considered to be as a useful tool for fabricating complex structures on a nanometer scale because of their selective reactivity…”
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Experimental Study on the Universality of Mobility Behavior in Ultra Thin Body Metal Oxide Semiconductor Field Effect Transistors by Tsutsui, Gen, Saitoh, Masumi, Nagumo, Toshiharu, Hiramoto, Toshiro

“…This paper describes the mobility behavior in ultra thin body (UTB) silicon on insulator (SOI) p-type metal oxide semiconductor field effect transistors…”
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Experimental Study on Breakdown of Mobility Universality in \langle 100\rangle-Directed (110)-Oriented pMOSFETs by Shimizu, K., Tsutsui, G., Januar, D., Saraya, T., Hiramoto, T.

“…This paper describes experimental determination of the value of eta in (110)-oriented SOI pMOSFETs by changing the SOI thickness and temperature. It is found…”
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Analytical model of body factor in short channel bulk MOSFETs for low voltage applications by Kumar, Anil, Nagumo, Toshiharu, Tsutsui, Gen, Hiramoto, Toshiro

“…An analytical model to study the degradation of body factor ( γ) and subthreshold factor ( S) of short channel bulk MOSFETs have been developed and the…”
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Superior mobility characteristics in [110]-oriented ultra thin body pMOSFETs with SOI thickness less than 6 nm by Gen Tsutsui, Masumi Saitoh, Toshiro Hiramoto

“…This paper reports the first experimental demonstration of superior mobility in [110]-oriented UTB pMOSFETs with t/sub SOI/ ranging from 32 nm down to 2.3 nm…”
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Mobility and threshold-voltage comparison between [110]- and (100)-oriented ultrathin-body silicon MOSFETs by Tsutsui, G., Hiramoto, T.

“…Mobility and threshold-voltage (V th ) behaviour in (110) and (100) ultrathin body (UTB) n- and p-MOSFETs are experimentally examined, and performance is…”
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Experimental study on superior mobility in [110]-oriented UTB SOI pMOSFETs by Tsutsui, G., Saitoh, M., Hiramoto, T.

“…The superior mobility in [110]-oriented ultrathin body (UTB) pMOSFETs with silicon-on-insulator (SOI) thickness (t/sub SOI/) ranging from 32 down to 2.3 nm is…”
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Channel Length and Threshold Voltage Dependence of Transistor Mismatch in a 32-nm HKMG Technology by Hook, Terence B, Johnson, Jeffrey B, Jin-Ping Han, Pond, Andrew, Shimizu, Takashi, Tsutsui, Gen

“…In this paper, it is shown empirically and through simulation that transistor mismatch due to random dopant fluctuation is a function of the well and halo…”
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Transport in ultra-thin-body SOI and silicon nanowire MOSFETs by Hiramoto, T., Gen Tsutsui, Shimizu, K., Kobayashi, M.

“…The ultra-thin-body (UTB) SOI and silicon nanowire MOSFETs are promising devices for future VLSIs because of their high short channel effect immunity. When the…”
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Leakage aware Si/SiGe CMOS FinFET for low power applications by Tsutsui, Gen, Durfee, Curtis, Wang, Miaomiao, Konar, Aniruddha, Wu, Heng, Mochizuki, Shogo, Bao, Ruqiang, Bedell, Stephen, Li, Juntao, Zhou, Huimei, Schmidt, Daniel, Yang, Chun Ju, Kelly, James, Watanabe, Koji, Levin, Theodore, Kleemeier, Walter, Guo, Dechao, Sadana, Devendra, Gupta, Dinesh, Knorr, Andreas, Bu, Huiming

“…Leakage in Si/SiGe CMOS FinFET is examined. Si cap passivation effectively improves SiGe pFET Dit, subthreshold slope, and mobility, which improves pFET DC…”
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Experimental conditions for a highly ordered monolayer of gold nanoparticles fabricated by the Langmuir–Blodgett method by Huang, Shujuan, Tsutsui, Gen, Sakaue, Hiroyuki, Shingubara, Shoso, Takahagi, Takayuki

“…A highly ordered monolayer film of alkanethiol-encapsulated gold nanoparticles was fabricated on a silicon substrate by using the Langmuir–Blodgett (LB)…”
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Experimental Study on Mobility Universality in (100) Ultrathin Body nMOSFETs with SOI Thickness of 5 nm by Shimizu, Ken, Tsutsui, Gen, Hiramoto, Toshiro

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SiGe FinFET for practical logic libraries by mitigating local layout effect by Tsutsui, Gen, Huimei Zhou, Greene, Andrew, Robison, Robert, Jie Yang, Juntao Li, Prindle, Christopher, Sporre, John R., Miller, Eric R., Liu, Derrick, Sporer, Ryan, Mulfinger, Bob, McArdle, Tim, Jin Cho, Karve, Gauri, Fee Li Lie, Kanakasabapathy, Siva, Carter, Rick, Gupta, Dinesh, Knorr, Andreas, Dechao Guo, Huiming Bu

“…SiGe FinFET has been explored for its benefit of high current drivability provided by channel strain [1-5]. We have demonstrated SiGe CMOS FinFET at 10nm…”
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