Search Results - "Gell, M.A."

Ionization thresholds in silicon and germanium avalanche photodiodes under hydrostatic pressure and strain by Allam, J., Czajkowski, I.K., Silver, M., Adams, A.R., Gell, M.A.

“…Silicon has the lowest multiplication noise of any known semiconductor for avalanche photodiodes (APDs), due to the large ratio of the hole-initiated…”
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Temperature dependence of DC characteristics of Si/SiGe heterojunction bipolar transistors by Martin, A.S.R., Gell, M.A., Reeder, A.A., Godfrey, D.J., Jones, M.E., Gibbings, C.J., Tuppen, C.G.

“…Silicon/silicon-germanium heterojunction bipolar transistors incorporating a strained layer of silicon - germanium alloy have been fabricated and their DC…”
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