Search Results - "Geiselbrechtinger, A."

A K-Band Complex Permittivity Sensor for Biomedical Applications in 130-nm SiGe BiCMOS by Lammert, V., Heine, C., Wessel, J., Jamal, F. I., Kissinger, D., Geiselbrechtinger, A., Issakov, V.

“…In this brief, an integrated K-band complex permittivity sensor for characterization of biomaterials is presented. The circuit enables determining both real…”
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Highly-Integrated Low-Power 60 GHz Multichannel Transceiver for Radar Applications in 28 nm CMOS by Issakov, V., Ciocoveanu, R., Weigel, R., Geiselbrechtinger, A., Rimmelspacher, J.

“…We present a highly-integrated low-power 60 GHz multi-channel transceiver realized in a 28 nm bulk CMOS technology. The circuit integrates three receive (RX)…”
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Experimental Considerations on Accurate fT and fmax Extraction for MOS Transistors Measured Up to 110 GHz by Rimmelspacher, J., Werthof, A., Weigel, R., Geiselbrechtinger, A., Issakov, V.

“…The unity current gain frequency (f T ) and the maximum oscillation frequency (f max ) are key parameters used to characterize the highest achievable speed of…”
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Experimental Study on Crosstalk Reduction between Integrated Inductors up to Millimeter-Wave Regime by Issakov, V., Werthof, A., Rimmelspacher, J., Weigel, R., Geiselbrechtinger, A.

“…Amount of inductors and transformers in highly integrated mm-wave multi-channel data communication and radar transceivers is steadily increasing with the…”
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Experimental Comparison of Integrated Transformers in a 28 nm Bulk CMOS Technology by Rimmelspacher, J., Breun, S., Werthof, A., Geiselbrechtinger, A., Weigel, R., Issakov, V.

“…This paper presents a systematic comparison of integrated transformer structures realized in a 28 nm bulk CMOS technology and characterized up to the…”
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