Search Results - "Geis, M. W."

CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band by Geis, M.W., Spector, S.J., Grein, M.E., Schulein, R.T., Yoon, J.U., Lennon, D.M., Deneault, S., Gan, F., Kaertner, F.X., Lyszczarz, T.M.

“…Submicrometer silicon photodiode waveguides, fabricated on silicon-on-insulator substrates, have photoresponse from <1270 to 1740 nm (0.8 AW -1 at 1550 nm) and…”
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A new surface electron-emission mechanism in diamond cathodes by Geis, M. W, Efremow, N. N, Krohn, K. E, Twichell, J. C, Lyszczarz, T. M, Kalish, R, Greer, J. A, Tabat, M. D

“…An electron-emission mechanism for cold cathodes is described based on the enhancement of electric fields at metal-diamond-vacuum triple junctions. Unlike…”
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Submicrosecond submilliwatt silicon-on-insulator thermooptic switch by Geis, M.W., Spector, S.J., Williamson, R.C., Lyszczarz, T.M.

“…Mach-Zehnder interferometer thermooptic switches were made using a thin-silicon-on-insulator material system. The switches use single-mode strip-Si waveguides,…”
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Broadband optical switch based on liquid crystal dynamic scattering by Geis, M W, Bos, P J, Liberman, V, Rothschild, M

“…This work demonstrates a novel broadband optical switch, based on dynamic-scattering effect in liquid crystals (LCs). Dynamic-scattering-mode technology was…”
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Diamond cold cathode by Geis, M.W., Efremow, N.N., Woodhouse, J.D., McAleese, M.D., Marchywka, M., Socker, D.G., Hochedez, J.F.

“…Diamond cold cathodes have been formed by fabricating mesa-etched diodes using carbon ion implantation into p-type diamond substrates. When these diodes are…”
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30 to 50 ns liquid-crystal optical switches by Geis, M W, Lyszczarz, T M, Osgood, R M, Kimball, B R

“…The optical switching time of twisted-nematic liquid-crystal cells using the liquid crystals, 5CB (C(5)H(11)-Ph-Ph-CN), 5OCB(C(5)H(11)-O-Ph-Ph-CN) and PCH5…”
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Controlling the carrier density of surface conductive diamond by Geis, M.W., Hollis, M.A., Turner, G.W., Daulton, J., Varghese, J.O., Klyukin, K., Wang, J., Yildiz, B., Zhang, B.

“…By placing a diamond in a H2 plasma and exposing it to air or overcoating it with Al2O3/SiO2, evaporated WO3, or other transition metal oxides a 2 dimensional,…”
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CMOS-compatible dual-output silicon modulator for analog signal processing by Spector, S J, Geis, M W, Zhou, G-R, Grein, M E, Gan, F, Popovic, M A, Yoon, J U, Lennon, D M, Ippen, E P, Kärtner, F Z, Lyszczarz, T M

“…A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V(pi)L of 4 V.cm. The…”
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GaN avalanche photodiodes grown by hydride vapor-phase epitaxy by McIntosh, K. A., Molnar, R. J., Mahoney, L. J., Lightfoot, A., Geis, M. W., Molvar, K. M., Melngailis, I., Aggarwal, R. L., Goodhue, W. D., Choi, S. S., Spears, D. L., Verghese, S.

“…Avalanche photodiodes have been demonstrated utilizing GaN grown by hydride vapor-phase epitaxy. Spatially uniform gain regions were achieved in devices…”
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Capacitance-voltage measurements on metal-SiO2-diamond structures fabricated with (100)- and (111)-oriented substrates by GEIS, M. W, GREGORY, J. A, PATE, B. B

“…Metal-SiO2-diamond structures fabricated using (100)- or (111)-oriented substrates of type IIb natural diamond (a p-type semiconductor) are discussed. The…”
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Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance by Wade, T., Geis, M.W., Fedynyshyn, T.H., Vitale, S.A., Varghese, J.O., Lennon, D.M., Grotjohn, T.A., Nemanich, R.J., Hollis, M.A.

“…The H-terminated surface of diamond when activated with NO2 produces a surface conduction layer that has been used to make FETs. Variations in processing can…”
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Hydrogen and deuterium termination of diamond for low surface resistance and surface step control by Geis, M.W., Varghese, J.O., Vardi, Alon, Kedzierski, J., Daulton, J., Calawa, D., Hollis, M.A., Wuorio, C.H., Turner, G.W., Warnock, S.M., Osadchy, T., Mallek, J., Melville, A., del Alamo, Jesus A., Zhang, Beijia

“…A 2D conductive hole gas in diamond is obtained by exposing diamond to a plasma formed in H2 or D2, which terminates the diamond surface with H or D. The…”
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All silicon infrared photodiodes: photo response and effects of processing temperature by Geis, M W, Spector, S J, Grein, M E, Schulein, R J, Yoon, J U, Lennon, D M, Wynn, C M, Palmacci, S T, Gan, F, Käertner, F X, Lyszczarz, T M

“…CMOS compatible infrared waveguide Si photodiodes are made responsive from 1100 to 1750 nm by Si(+) implantation and annealing. This article compares diodes…”
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Optically switched conductivity of epitaxial diamond on nitrogen doped diamond substrates by Geis, M. W., Krohn, K. E., Lawless, J. M., Deneault, S. J., Marchant, M. F., Twichell, J. C., Lyszczarz, T. M., Butler, J. E., Flechtner, D. D., Wright, R.

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30 to 50 ns liquid-crystal optical switches by Geis, M. W., Lyszczarz, T. M., Osgood, R. M., Kimball, B. R.

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Large-area mosaic diamond films approaching single-crystal quality by GEIS, M. W, SMITH, H. I, ARGOITIA, A, ANGUS, J, MA, G.-H. M, GLASS, J. T, BUTLER, J, ROBINSON, C. J, PRYOR, R

“…The seeding for large-area mosaic diamond films approaching single-crystal quality is described. The technique includes patterned etching of relief structures…”
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Diamond transistor performance and fabrication by Geis, M.W.

“…The author reviews some of the device properties of diamonds, as well as recently developed diamond device fabrication techniques for high-frequency,…”
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High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond by Geis, M.W., Rathman, D.D., Ehrlich, D.J., Murphy, R.A., Lindley, W.T.

“…Point-contact transistors and Schottky diodes have been formed on synthetic boron-doped diamond. This is the first report of diamond transistors that have…”
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Comparison of electric field emission from nitrogen-doped, type Ib diamond, and boron-doped diamond by Geis, M. W., Twichell, J. C., Efremow, N. N., Krohn, K., Lyszczarz, T. M.

“…Field emission of electrons from boron- and nitrogen-doped diamond is compared. Emission from boron-doped diamond requires vacuum electric fields of 20–50 V…”
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High-conductance, low-leakage diamond Schottky diodes by GEIS, M. W, EFREMOW, N. N, VON WINDHEIM, J. A

“…Schottky diodes formed of Al, Au, and Hg on diamond have been characterized as a function of plasma treatment and thermal annealing. Plasmas formed from N2O,…”
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