Search Results - "Geiler, H"

  • Showing 1 - 14 results of 14
Refine Results
  1. 1
  2. 2

    Photoelastic characterization of residual stress in GaAs-wafers by Geiler, H.D., Karge, H., Wagner, M., Eichler, St, Jurisch, M., Kretzer, U., Scheffer-Czygan, M.

    “…Residual stress in GaAs-wafers was investigated on different length scales by rapid full wafer imaging and by microscopic imaging of dislocation cells, using…”
    Get full text
    Journal Article Conference Proceeding
  3. 3

    Detection and analysis of crystal defects in silicon by scanning infrared depolarization and photoluminescence heterodyne techniques by Geiler, H.D., Karge, H., Wagner, M., Ehlert, A., Daub, E., Messmann, K.

    “…The coupling of photoelasticity and photoluminescence measurement techniques represents a powerful tool for non-destructive defect monitoring in silicon…”
    Get full text
    Journal Article Conference Proceeding
  4. 4

    Nondestructive evaluation of as-implanted and annealed ultra shallow junctions by photothermal and photoluminescence heterodyne techniques by Geiler, H.D., Karge, H., Wagner, M., Lerch, W., Paul, S.

    “…The control of implantation dose, ion energy and the junction depth after annealing are key points of the on-line metrology for ultra shallow junction…”
    Get full text
    Journal Article
  5. 5

    Investigation of thermophysical properties of AIP coated cutting tools for dry machining by Lugscheider, E., Geiler, H.D., Lake, M., Zimmermann, H.

    Published in Surface & coatings technology (15-12-1996)
    “…Generally cutting processes are supported by using coolants which are ecologically harmful and therefore expensive concerning their disposal. The substitution…”
    Get full text
    Journal Article Conference Proceeding
  6. 6

    Characterization of bonded wafer stacks by use of the photoelastic-analysis-method by Geiler, H., Schulz, K., Knechtel, R.

    “…The photo-elastic-analysis-method is a powerful method for investigating the overall quality of bonded wafer stacks. It can provide full wafer as well as…”
    Get full text
    Journal Article
  7. 7
  8. 8

    Photoelastic stress evaluation and defect monitoring in 300-mm-wafer manufacturing by Geiler, H.D, Wagner, M, Karge, H, Paulsen, M, Schmolke, R

    “…Process monitoring and tool characterization on product wafers require rapid non-contact and non-destructive evaluation methods. Because all process steps are…”
    Get full text
    Journal Article
  9. 9

    Surface characterization of semiconductors with plasma and thermal waves analysis by Buchmann, F., Geiler, H.D.

    “…The well characterized (100)-Si surface is used to demonstrate the capacity of the noncontact measurement of surface recombination velocity of excess carriers…”
    Get full text
    Journal Article
  10. 10

    Explosive crystallization phenomena in SOI structures by Geiler, H. D., Wagner, M., Glaser, E., Andrä, G., Wolff, D., Götz, G.

    Published in Journal of materials research (01-12-1989)
    “…Using the double pulse technique with two synchronized lasers, we studied the conditions of ignition and evolution of explosive crystallization. The structure…”
    Get full text
    Journal Article
  11. 11
  12. 12

    Investigation of microwave annealed implanted layers with TWIN metrology system by Lojek, B., Geiler, H. D.

    “…The study of the effects of microwave annealing of ion-implanted layers in silicon substrate evaluated by photo-thermal technique is reported. The technique…”
    Get full text
    Conference Proceeding
  13. 13
  14. 14