Search Results - "Geels, R.S."

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  1. 1

    High speed quantum-well lasers and carrier transport effects by Nagarajan, R., Ishikawa, M., Fukushima, T., Geels, R.S., Bowers, J.E.

    Published in IEEE journal of quantum electronics (01-10-1992)
    “…Carrier transport can significantly affect the high-speed properties of quantum-well lasers. The authors have developed a model and derived analytical…”
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    Journal Article
  2. 2

    Modeling temperature effects and spatial hole burning to optimize vertical-cavity surface-emitting laser performance by Scott, J.W., Geels, R.S., Corzine, S.W., Coldren, L.A.

    Published in IEEE journal of quantum electronics (01-05-1993)
    “…Two-dimensional physical models for single-mode index guided vertical cavity surface emitting lasers (VCSELs) are developed and compared with experimental…”
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    Journal Article
  3. 3

    Transport limits in high-speed quantum-well lasers: experiment and theory by Nagarajan, R., Fukushima, T., Ishikawa, M., Bowers, J.E., Geels, R.S., Coldren, L.A.

    Published in IEEE photonics technology letters (01-02-1992)
    “…It is shown experimentally that the modulation bandwidth of quantum well lasers can be reduced by a factor of six due to carrier transport across undoped…”
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    Journal Article
  4. 4

    Low threshold planarized vertical-cavity surface-emitting lasers by Geels, R.S., Corzine, S.W., Scott, J.W., Young, D.B., Coldren, L.A.

    Published in IEEE photonics technology letters (01-04-1990)
    “…Vertical-cavity surface-emitting lasers fabricated utilizing a self-aligned process to provide planarized contacts are discussed. A single 80-AA In/sub…”
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    Journal Article
  5. 5

    Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes by Bour, D.P., Geels, R.S., Treat, D.W., Paoli, T.L., Ponce, F., Thornton, R.L., Krusor, B.S., Bringans, R.D., Welch, D.F.

    Published in IEEE journal of quantum electronics (01-02-1994)
    “…The properties of (AlGa)/sub 0.5/In/sub 0.5/P, strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures, and single quantum well (QW) laser…”
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    Journal Article
  6. 6

    Narrow-linewidth, low threshold vertical-cavity surface-emitting lasers by Geels, R.S., Coldren, L.A.

    “…We report for the first time linewidth measurements of a strained quantum well (SQW) vertical-cavity surface-emitting laser (VCSEL). A straight-forward. high…”
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    Conference Proceeding
  7. 7

    Design of Fabry-Perot surface-emitting lasers with a periodic gain structure by Corzine, S.W., Geels, R.S., Scott, J.W., Yan, R.-H., Coldren, L.A.

    Published in IEEE journal of quantum electronics (01-06-1989)
    “…A detailed analysis of a Fabry-Perot surface emitting laser (FP-SEL) which utilizes the recently proposed concept of periodic gain is presented. It is shown…”
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    Journal Article
  8. 8

    InGaAs vertical-cavity surface-emitting lasers by Geels, R.S., Corzine, S.W., Coldren, L.A.

    Published in IEEE journal of quantum electronics (01-06-1991)
    “…The authors give theoretical and experimental results for vertical-cavity surface-emitting lasers (VCSELs). The modeling is applied to the design of InGaAs…”
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    Journal Article
  9. 9

    Drift leakage current in AlGaInP quantum-well lasers by Bour, D.P., Treat, D.W., Thornton, R.L., Geels, R.S., Welch, D.F.

    Published in IEEE journal of quantum electronics (01-05-1993)
    “…The temperature dependence of threshold current and quantum efficiency for Ga/sub x/In/sub 1-x/P (x=0.4, 0.6; lambda =680, 633 nm) single 80-AA quantum-well…”
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    Journal Article
  10. 10

    Submilliamp threshold vertical-cavity laser diodes by GEELS, R. S, CODREN, L. A

    Published in Applied physics letters (15-10-1990)
    “…We report for the first time room-temperature, continuous-wave operation of individual vertical-cavity laser diodes with submilliampere threshold currents. A…”
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    Journal Article
  11. 11

    Design and characterization of In/sub 0.2/Ga/sub 0.8/As MQW vertical-cavity surface-emitting lasers by Geels, R.S., Thibeault, B.J., Corzine, S.W., Scott, J.W., Coldren, L.A.

    Published in IEEE journal of quantum electronics (01-12-1993)
    “…The device design, material characterization, and performance of optimized vertical-cavity surface-emitting lasers (VCSELs) are presented. The basic design…”
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    Journal Article
  12. 12

    610-nm band AlGaInP single quantum well laser diode by Bour, D.P., Treat, D.W., Beernink, K.J., Krusor, B.S., Geels, R.S., Welch, D.F.

    Published in IEEE photonics technology letters (01-02-1994)
    “…The short-wavelength limits of AlGaInP visible laser diodes with Al/sub 0.5/In/sub 0.5/P cladding layers, and Ga/sub x/In/sub 1/spl minus/x/P single quantum…”
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    Journal Article
  13. 13

    Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers by Bour, D.P., Treat, D.W., Thornton, R.L., Bringans, R.D., Paoli, T.L., Geels, R.S., Welch, D.F.

    Published in IEEE photonics technology letters (01-10-1992)
    “…The authors examine the operating characteristics of short wavelength (617< lambda <640 nm) AlGaInP lasers containing three thin ( approximately 20 AA)…”
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    Journal Article
  14. 14

    70-GHz relaxation oscillation in a vertical cavity surface emitting laser by Tauber, D., Wang, G., Geels, R.S., Bowers, J.E., Coldren, L.A.

    Published in IEEE transactions on electron devices (01-11-1992)
    “…Summary form only given. Very-high-frequency relaxation oscillations were measured in an electrically pumped vertical cavity surface emitting laser (VCSEL)…”
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    Journal Article
  15. 15

    High-speed single-quantum-well InGaAs/GaAs laser design and experiment by Nagarajan, R., Fukushima, T., Bowers, J.E., Geels, R.S., Coldren, L.A.

    Published in IEEE transactions on electron devices (01-12-1991)
    “…Summary form only given. The authors report damping factors an order of magnitude lower than previously reported for SQW lasers. They also report bandwidths of…”
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    Journal Article
  16. 16

    Multi-quantum well electro-optic modulator using a combination of excitonic index and absorption changes by Yan, R.H., Simes, R.J., Geels, R.S., Coldren, L.A., English, J.H., Gossard, A.C.

    Published in IEEE transactions on electron devices (01-12-1988)
    “…Efficient reflection modulation, using index and absorption changes in a novel p-i-n surface-normal Fabry-Perot resonator configuration, is reported. A reverse…”
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    Journal Article
  17. 17

    Generation if picosecond pulses with a gain-switched GaAs surface-emitting laser by KARIN, J. R, MELCER, L. G, NAGARAJAN, R, BOWERS, J. E, CORZINE, S. W, MORTON, P. A, GEELS, R. S, COLDREN, L. A

    Published in Applied physics letters (03-09-1990)
    “…Pulses shorter than 4 ps (deconvolved) have been obtained by optically gain switching a GaAs multiple quantum well vertical-cavity surface-emitting laser with…”
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    Journal Article
  18. 18

    Efficient, narrow-linewidth distributed-Bragg-reflector surface-emitting laser with periodic gain by Corzine, S.W., Geels, R.S., Yan, R.H., Scott, J.W., Coldren, L.A., Gourley, P.L.

    Published in IEEE photonics technology letters (01-03-1989)
    “…Efficient, narrow-line emission from a novel vertical cavity distributed-Bragg-reflector surface-emitting laser with gain segments periodically placed on…”
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    Journal Article
  19. 19

    90 W CW red laser diode bar by Geels, R.S., Sakamoto, M., Welch, D.F.

    Published in Proceedings of LEOS'94 (1994)
    “…We report 1 cm wide monolithic arrays of semiconductor laser diodes emitting output powers up to 90 W CW. Bars with lower fill factors were found to fail by…”
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    Conference Proceeding
  20. 20

    AlGaInP red laser diodes by OMVPE by Bour, D.P., Treat, D.W., Bringans, R.D., Geels, R.S., Welch, D.F.

    “…We summarize the growth and characterization of (AlGa)/sub 0.5/In/sub 0.5/P quantum well (QW) lasers, including the important issues of p-doping, optimized…”
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    Conference Proceeding