Search Results - "Geels, R.S."
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1
High speed quantum-well lasers and carrier transport effects
Published in IEEE journal of quantum electronics (01-10-1992)“…Carrier transport can significantly affect the high-speed properties of quantum-well lasers. The authors have developed a model and derived analytical…”
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Journal Article -
2
Modeling temperature effects and spatial hole burning to optimize vertical-cavity surface-emitting laser performance
Published in IEEE journal of quantum electronics (01-05-1993)“…Two-dimensional physical models for single-mode index guided vertical cavity surface emitting lasers (VCSELs) are developed and compared with experimental…”
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Journal Article -
3
Transport limits in high-speed quantum-well lasers: experiment and theory
Published in IEEE photonics technology letters (01-02-1992)“…It is shown experimentally that the modulation bandwidth of quantum well lasers can be reduced by a factor of six due to carrier transport across undoped…”
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Journal Article -
4
Low threshold planarized vertical-cavity surface-emitting lasers
Published in IEEE photonics technology letters (01-04-1990)“…Vertical-cavity surface-emitting lasers fabricated utilizing a self-aligned process to provide planarized contacts are discussed. A single 80-AA In/sub…”
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Journal Article -
5
Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes
Published in IEEE journal of quantum electronics (01-02-1994)“…The properties of (AlGa)/sub 0.5/In/sub 0.5/P, strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures, and single quantum well (QW) laser…”
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Journal Article -
6
Narrow-linewidth, low threshold vertical-cavity surface-emitting lasers
Published in 12th IEEE International Conference on Semiconductor Laser (1990)“…We report for the first time linewidth measurements of a strained quantum well (SQW) vertical-cavity surface-emitting laser (VCSEL). A straight-forward. high…”
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Conference Proceeding -
7
Design of Fabry-Perot surface-emitting lasers with a periodic gain structure
Published in IEEE journal of quantum electronics (01-06-1989)“…A detailed analysis of a Fabry-Perot surface emitting laser (FP-SEL) which utilizes the recently proposed concept of periodic gain is presented. It is shown…”
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Journal Article -
8
InGaAs vertical-cavity surface-emitting lasers
Published in IEEE journal of quantum electronics (01-06-1991)“…The authors give theoretical and experimental results for vertical-cavity surface-emitting lasers (VCSELs). The modeling is applied to the design of InGaAs…”
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Journal Article -
9
Drift leakage current in AlGaInP quantum-well lasers
Published in IEEE journal of quantum electronics (01-05-1993)“…The temperature dependence of threshold current and quantum efficiency for Ga/sub x/In/sub 1-x/P (x=0.4, 0.6; lambda =680, 633 nm) single 80-AA quantum-well…”
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10
Submilliamp threshold vertical-cavity laser diodes
Published in Applied physics letters (15-10-1990)“…We report for the first time room-temperature, continuous-wave operation of individual vertical-cavity laser diodes with submilliampere threshold currents. A…”
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Journal Article -
11
Design and characterization of In/sub 0.2/Ga/sub 0.8/As MQW vertical-cavity surface-emitting lasers
Published in IEEE journal of quantum electronics (01-12-1993)“…The device design, material characterization, and performance of optimized vertical-cavity surface-emitting lasers (VCSELs) are presented. The basic design…”
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Journal Article -
12
610-nm band AlGaInP single quantum well laser diode
Published in IEEE photonics technology letters (01-02-1994)“…The short-wavelength limits of AlGaInP visible laser diodes with Al/sub 0.5/In/sub 0.5/P cladding layers, and Ga/sub x/In/sub 1/spl minus/x/P single quantum…”
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13
Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers
Published in IEEE photonics technology letters (01-10-1992)“…The authors examine the operating characteristics of short wavelength (617< lambda <640 nm) AlGaInP lasers containing three thin ( approximately 20 AA)…”
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Journal Article -
14
70-GHz relaxation oscillation in a vertical cavity surface emitting laser
Published in IEEE transactions on electron devices (01-11-1992)“…Summary form only given. Very-high-frequency relaxation oscillations were measured in an electrically pumped vertical cavity surface emitting laser (VCSEL)…”
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15
High-speed single-quantum-well InGaAs/GaAs laser design and experiment
Published in IEEE transactions on electron devices (01-12-1991)“…Summary form only given. The authors report damping factors an order of magnitude lower than previously reported for SQW lasers. They also report bandwidths of…”
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Journal Article -
16
Multi-quantum well electro-optic modulator using a combination of excitonic index and absorption changes
Published in IEEE transactions on electron devices (01-12-1988)“…Efficient reflection modulation, using index and absorption changes in a novel p-i-n surface-normal Fabry-Perot resonator configuration, is reported. A reverse…”
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17
Generation if picosecond pulses with a gain-switched GaAs surface-emitting laser
Published in Applied physics letters (03-09-1990)“…Pulses shorter than 4 ps (deconvolved) have been obtained by optically gain switching a GaAs multiple quantum well vertical-cavity surface-emitting laser with…”
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Journal Article -
18
Efficient, narrow-linewidth distributed-Bragg-reflector surface-emitting laser with periodic gain
Published in IEEE photonics technology letters (01-03-1989)“…Efficient, narrow-line emission from a novel vertical cavity distributed-Bragg-reflector surface-emitting laser with gain segments periodically placed on…”
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19
90 W CW red laser diode bar
Published in Proceedings of LEOS'94 (1994)“…We report 1 cm wide monolithic arrays of semiconductor laser diodes emitting output powers up to 90 W CW. Bars with lower fill factors were found to fail by…”
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Conference Proceeding -
20
AlGaInP red laser diodes by OMVPE
Published in Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) (1994)“…We summarize the growth and characterization of (AlGa)/sub 0.5/In/sub 0.5/P quantum well (QW) lasers, including the important issues of p-doping, optimized…”
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Conference Proceeding