Search Results - "Gaspari, V."

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    New evidence of cutaneous leishmaniasis in north‐eastern Italy by Gaspari, V., Ortalli, M., Foschini, M.P., Baldovini, C., Lanzoni, A., Cagarelli, R., Gaibani, P., Rossini, G., Vocale, C., Tigani, R., Gentilomi, G.A., Misciali, C., Pesci, S., Patrizi, A., Landini, M.P., Varani, S.

    “…Background Human leishmaniasis is on increase in the Mediterranean Europe. However, the exact prevalence of cutaneous leishmaniasis (CL) is largely unknown as…”
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    Journal Article
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    Pb isotope record over one century in snow from Victoria Land, Antarctica by Van de Velde, K., Vallelonga, P., Candelone, J.-P., Rosman, K.J.R., Gaspari, V., Cozzi, G., Barbante, C., Udisti, R., Cescon, P., Boutron, C.F.

    Published in Earth and planetary science letters (30-03-2005)
    “…Pb and Ba concentrations and Pb isotopic compositions are reported for firn core and snow pit samples from Victoria Land, Antarctica, dating from 1872 AD to…”
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    Journal Article
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    Siderophile metal fallout to Greenland from the 1991 winter eruption of Hekla (Iceland) and during the global atmospheric perturbation of Pinatubo by Gabrielli, Paolo, Barbante, Carlo, Plane, John M.C., Boutron, Claude F., Jaffrezo, Jean Luc, Mather, Tamsin A., Stenni, Barbara, Gaspari, Vania, Cozzi, Giulio, Ferrari, Christophe, Cescon, Paolo

    Published in Chemical geology (30-09-2008)
    “…Ir and Pt are siderophile elements that are considered proxies of meteoric material of cosmic origin entrapped within polar ice layers. However, volcanic and…”
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    Journal Article
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    Subthreshold Operation of a Monolithically Integrated Strained-Si Current Mirror at Low Temperatures by Fobelets, K., Gaspari, V., Ding, P.W.

    “…The dc operation of a simple current mirror built with two monolithically integrated strained-Si (s-Si) MOSFETs operating in the subthreshold region is studied…”
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    Journal Article
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    Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET by Gaspari, V., Fobelets, K., Velazquez-Perez, J.E., Ferguson, R., Michelakis, K., Despotopoulos, S., Papavassilliou, C.

    Published in Applied surface science (15-03-2004)
    “…An investigation of the low-temperature operation of a 0.5 μm-gate Si:SiGe depletion-mode n-type modulation-doped field-effect transistor is presented. The…”
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    Journal Article Conference Proceeding
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    DC performance of deep submicrometer Schottky-gated n-channel Si:SiGe HFETs at low temperatures by Gaspari, V., Fobelets, K., Velazquez-Perez, J.E., Hackbarth, T.

    Published in IEEE transactions on electron devices (01-09-2005)
    “…N-type Schottky-gated Si:SiGe heterostructure field-effect transistors with physical gate lengths between 70 and 450nm are characterized over a wide…”
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    Journal Article
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