Search Results - "Gaskill, D.K."

Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates by Moon, J.S., Curtis, D., Hu, M., Wong, D., McGuire, C., Campbell, P.M., Jernigan, G., Tedesco, J.L., VanMil, B., Myers-Ward, R., Eddy, C., Gaskill, D.K.

“…We report dc and the first-ever measured small-signal radio-frequency (RF) performance of epitaxial-graphene RF field-effect transistors (FETs), where the…”
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4H-SiC Visible-Blind Single-Photon Avalanche Diode for Ultraviolet Detection at 280 and 350 nm by Jun Hu, Xiaobin Xin, Xueqing Li, Zhao, J.H., VanMil, B.L., Kok-Keong Lew, Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

“…This paper reports on a 4H-SiC single-photon avalanche diode (SPAD) operating at UV wavelengths of 280 and 350 nm. The SPAD shows low dark currents of 20 and…”
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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8 by VANMIL, B. L, LEW, K.-K, MYERS-WARD, R. L, HOLM, R. T, GASKILL, D. K, EDDY, C. R, WANG, L, ZHAO, P

“…During the growth of silicon carbide (SiC) by hot-wall chemical vapor deposition, there is a competition between etching and growth processes due to hydrogen…”
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MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates by Mastro, M.A., Eddy, C.R., Gaskill, D.K., Bassim, N.D., Casey, J., Rosenberg, A., Holm, R.T., Henry, R.L., Twigg, M.E.

“…A number of applications require deposition of thick, high-quality AlN films with low stress on Si substrates. Conventional high-temperature MOCVD growth…”
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Quantum transport in functionalized epitaxial graphene without electrostatic gating by Lock, E.H., Prestigiacomo, J.C., Dev, P., Nath, A., Myers-Ward, R.L., Reinecke, T.L., Gaskill, D.K., Osofsky, M.S.

“…Graphene, the first isolated two-dimensional material, has captivated researchers for the last decade due to its unique structure that leads to novel…”
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Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm by Moon, J.S., Curtis, D., Bui, S., Hu, M., Gaskill, D.K., Tedesco, J.L., Asbeck, P., Jernigan, G.G., VanMil, B.L., Myers-Ward, R.L., Eddy, C.R., Campbell, P.M., Weng, X.

“…In this letter, we present state-of-the-art performance of top-gated graphene n-FETs and p-FETs fabricated with epitaxial graphene layers grown on Si-face…”
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Terahertz ellipsometry and terahertz optical-Hall effect by Hofmann, T., Herzinger, C.M., Tedesco, J.L., Gaskill, D.K., Woollam, J.A., Schubert, M.

“…Ellipsometry has been proven as an excellent tool for the precise and accurate determination of material optical properties in the spectral range from the far…”
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Orders of Magnitude Improvement in Coherence of Silicon-Vacancy Ensembles in Isotopically Purified 4H-SiC by I. Lekavicius, R.L. Myers-Ward, D.J. Pennachio, J.R. Hajzus, D.K. Gaskill, A.P. Purdy, A.L. Yeats, P.G. Brereton, E.R. Glaser, T.L. Reinecke, S.G. Carter

“…For solid-state spin systems, unwanted interactions with surrounding spin baths and inhomogeneity are ubiquitous challenges. In defect spin systems, part of…”
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Orders of Magnitude Improvement in Coherence of Silicon-Vacancy Ensembles in Isotopically Purified 4 H - SiC by Lekavicius, I., Myers-Ward, R.L., Pennachio, D.J., Hajzus, J.R., Gaskill, D.K., Purdy, A.P., Yeats, A.L., Brereton, P.G., Glaser, E.R., Reinecke, T.L., Carter, S.G.

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Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC by Xu, P., Qi, D., Schoelz, J.K., Thompson, J., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K., Neek-Amal, M., Peeters, F.M.

“…Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is…”
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Plasma-based chemical modification of epitaxial graphene with oxygen functionalities by Hernández, S.C., Wheeler, V.D., Osofsky, M.S., Jernigan, G.G., Nagareddy, V.K., Nath, A., Lock, E.H., Nyakiti, L.O., Myers-Ward, R.L., Sridhara, K., Horsfall, A.B., Eddy, C.R., Gaskill, D.K., Walton, S.G.

“…Epitaxial graphene is promising material for future graphene-based applications including high frequency devices and chemical/biological sensors. Modifying the…”
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Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface by Xu, P., Ackerman, M.L., Barber, S.D., Schoelz, J.K., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

“…Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+…”
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Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H 2 and C 3H 8 by VanMil, B.L., Lew, K.-K., Myers-Ward, R.L., Holm, R.T., Gaskill, D.K., Eddy, C.R., Wang, L., Zhao, P.

“…During the growth of silicon carbide (SiC) by hot-wall chemical vapor deposition, there is a competition between etching and growth processes due to hydrogen…”
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Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC by VanMil, B.L., Lew, K.K., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.

“…The carbon-to-silicon ratio influences the background doping level of silicon carbide grown by hot-wall chemical vapor deposition (HWCVD). A quadrupole mass…”
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Epitaxial graphene RF field-effect transistors by Moon, J.S., Curtis, D., Hu, M., Wong, D., McGuire, C., Campbell, P.M., Jernigan, G., Tedesco, J., VanMil, B., Myers-Ward, R., Eddy, C., Gaskill, D.K., Asbeck, P.

“…In this paper, the recent development of graphene FETs on a wafer scale, including DC and RF performance is presented. The epitaxial growth of graphene is…”
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Observation of nanopipes in α-GaN crystals by Qian, W., Skowronski, M., Doverspike, K., Rowland, L.B., Gaskill, D.K.

“…Long hollow pipes, a few nanometers in radius, have been observed for the first time in α-GaN films grown on sapphire substrates by organometallic vapor phase…”
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Multi-component response in multilayer graphene revealed through terahertz and infrared magneto-spectroscopy by Ellis, C.T., Stier, A.V., George, D., Tischler, J.G., Glaser, E.R., Myers-Ward, R.L., Tedesco, J.L., Eddy, C.R., Gaskill, D.K., Markelz, A., Cerne, J.

“…In this work we present mid-infrared (114 meV-224 meV) polarization-sensitive measurements on multilayer epitaxial graphene, which reveal graphene's rich and…”
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Basal plane dislocation reduction in nitrogen doped 8° 4H-SiC epilayers by Wheeler, V.D., VanMil, B.L., Myers-Ward, R.L., Eddy, C.R., Stahlbush, R.E., Gaskill, D.K.

“…In summary, this work has shown that the mechanism by which BPDs are converted to TEDs is dependent on carrier concentration and type in 8° off-cut SiC…”
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Structure and defects in multilayer CVD graphene on C-face 6H-SiC by Twigg, M.E., Picard, Y.N., Tedesco, J.L., Myers-Ward, R.L., VanMil, B.L., Eddy, C.R., Gaskill, D.K.

“…Determining the structure of multilayer graphene grown on 6H-SiC presents a problem common to other epitaxial systems. Accordingly, the configuration of such a…”
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Characterization of crystalline low temperature GaAs layers annealed from an amorphous phase by Giordana, A., Glembocki, O. J., Glaser, E. R., Gaskill, D. K., Kyono, C. S., Twigg, M. E., Fatemi, M., Tadayon, B., Tadayon, S.

“…The results from an in-depth characterization of as-grown and annealed low-temperature GaAs layers deposited at less than 260 degree C are presented. The…”
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