Search Results - "Garuts, V.E."

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  1. 1

    Design and evaluation of a 5 GHz HBT strobed comparator by Garuts, V.E.

    “…A strobed comparator-latch designed for reproducible manufacturing has been fabricated in a development GaAs heterojunction bipolar technology (HBT) for…”
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    Conference Proceeding
  2. 2

    A dual 4-bit 2-Gs/s full Nyquist analog-to-digital converter using a 70-ps silicon bipolar technology with borosenic-poly process and coupling-base implant by Garuts, V.E., Yu, Y.-C.S., Traa, E.O., Yamaguchi, T.

    Published in IEEE journal of solid-state circuits (01-04-1989)
    “…A dual 4-b analog-to-digital converter (ADC) with Nyquist operation to 2 gigasamples/second (Gs/s) and -29-dBc distortion at 1 GHz is presented. A novel…”
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    Journal Article
  3. 3

    Process and device performance of a high-speed double poly-Si bipolar technology using borosenic-poly process with coupling-base implant by Yamaguchi, T., Yu, Y.-C.S., Lane, E.E., Lee, J.S., Patton, E.E., Herman, R.D., Ahrendt, D.R., Drobny, V.F., Yuzuriha, T.H., Garuts, V.E.

    Published in IEEE transactions on electron devices (01-08-1988)
    “…Use of boron and arsenic diffusions through an emitter polysilicon film (borosenic-poly emitter-base process) produces a transistor base width of less than…”
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    Journal Article
  4. 4

    A dual 4-bit, 1.5 Gs/s analog to digital converter by Garuts, V.E., Traa, E.O., Yu, Y.-C.S., Yamaguchi, T.

    “…A dual 4-bit analog-to-digital converter with Nyquist operation to 1.5 Gs/s and -29 dBc distortion at 1 GHz is presented. An integral digital-to-analog…”
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    Conference Proceeding