Search Results - "Garrione, Julien"
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Innovative Low-Power Self-Nanoconfined Phase-Change Memory
Published in IEEE transactions on electron devices (01-02-2021)“…In this article, we demonstrate at array level and in industrial-like devices, the extreme scaling down to nanometric dimensions of the phase-change memory…”
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Journal Article -
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Ge Content Optimization in Ge(SbSe)N OTS Materials for Selector Applications
Published in IEEE transactions on electron devices (01-11-2022)“…In this article, we investigate the influence of germanium content in GeSbSeN-based ovonic threshold switching (OTS) selector devices. We performed…”
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Journal Article -
3
Ge Content Optimization in OTS Materials for Selector Applications
Published in IEEE transactions on electron devices (2022)“…In this article, we investigate the influence of germanium content in GeSbSeN-based ovonic threshold switching (OTS) selector devices. We performed…”
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Journal Article -
4
Multilayered Sb-Rich GeSbTe Phase-Change Memory for Best Endurance and Reduced Variability
Published in IEEE transactions on electron devices (01-08-2022)“…Sb-rich GeSbTe-based phase-change memories (PCMs) were studied in the past years for their high switching speed to target storage class memory (SCM)…”
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Journal Article -
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Structural properties of Ge-Sb-Te alloys
Published in Solid-state electronics (01-11-2021)“…•The Ge-Sb-Te (GST) thin films were prepared by reactive sputtering technique.•The structural properties of GST and Ge-rich GST thin films were…”
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Journal Article -
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Optimization of 3ω Method for Phase-Change Materials Thermal Conductivity Measurement at High Temperature
Published in 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) (01-03-2019)“…Thermal conductivity (kth) of Ge-rich Ge-Sb-Te phase-change material (GGST) is here investigated at temperatures up to 400\ ^{\circ}\mathrm{C} through "3ω…”
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Conference Proceeding -
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Annealing effects on the structure of Ge-Sb-Te alloys
Published in 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (01-09-2020)“…In the present study the structural properties of Germanium (Ge)-Antimony (Sb)-Tellurium (Te) (GST) and Ge-rich GST thin film samples are investigated after…”
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Conference Proceeding -
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Phase-Change Memory: Performance, Roles and Challenges
Published in 2018 IEEE International Memory Workshop (IMW) (01-05-2018)“…In this paper we analyze recent progress in Phase- Change Memory (PCM) technology targeting both Storage Class Memory and embedded applications. The challenge…”
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Conference Proceeding -
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High Temperature Stability and Performance Analysis of N-doped Ge-Se-Sb Based OTS Selector Devices
Published in 2018 IEEE International Memory Workshop (IMW) (01-05-2018)“…In this paper, we investigate the stability at high temperature of N doped Ge-Se-Sb based Ovonic Threshold Switching selectors (OTS). Annealing temperatures up…”
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Conference Proceeding -
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Improved Electrical Performance Thanks to Sb and N Doping in Se-Rich GeSe-Based OTS Selector Devices
Published in 2017 IEEE International Memory Workshop (IMW) (01-05-2017)“…In this paper, we investigate the impact of Sb and N doping in Se-rich GeSe based Ovonic Threshold Switching (OTS) selector devices, targeting crossbar memory…”
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Conference Proceeding