Search Results - "Garland, Ben M."

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  1. 1

    Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts by Garland, Ben M., Davis, Benjamin E., Strandwitz, Nicholas C.

    Published in Solar energy materials and solar cells (15-10-2023)
    “…A tunneling atomic layer deposited (ALD) AlOx layer was inserted in a Si|SiOx|AlOx|MoOx|metal tunnel diode structure to investigate the impact of fixed…”
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    Journal Article
  2. 2

    Investigating the effect of aluminum oxide fixed charge on Schottky barrier height in molybdenum oxide-based selective contacts by Garland, Ben M., Davis, Benjamin E., Strandwitz, Nicholas C.

    Published in Solar energy materials and solar cells (08-09-2023)
    “…A tunneling atomic layer deposited (ALD) AlOx layer was inserted in a Si|SiOx|AlOx|MoOx|metal tunnel diode structure to investigate the impact of fixed…”
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    Journal Article
  3. 3

    Atomic layer deposition of MoOx thin films using Mo(iPrCp)2H2 and O3 by Hendrix, Ethan, Garland, Ben M., Vemuri, Vamseedhara, Strandwitz, Nicholas C.

    “…This work studied the growth of molybdenum oxide thin films with thermal atomic layer deposition (ALD) using Mo(iPrCp)2H2 and O3 as precursors. Growth…”
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    Journal Article
  4. 4

    A study of in situ reduction of MoO3 to MoO2 by X-ray Photoelectron Spectroscopy by Garland, Ben M., Fairley, Neal, Strandwitz, Nicholas C., Thorpe, Ryan, Bargiela, Pascal, Baltrusaitis, Jonas

    Published in Applied surface science (01-10-2022)
    “…[Display omitted] •XPS data of thermal MoO3 thin film reduction acquired.•Temperature evolved component spectra were used to construct spectral…”
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    Journal Article
  5. 5

    A study of in situ reduction of MoO3 to MoO2 by X-ray Photoelectron Spectroscopy by Garland, Ben M., Fairley, Neal, Strandwitz, Nicholas C., Thorpe, Ryan, Bargiela, Pascal, Baltrusaitis, Jonas

    Published in Applied surface science (29-05-2022)
    “…Results from X-ray Photoelectron Spectroscopy (XPS) of molybdenum oxide samples are presented to elucidate how Mo (VI) oxide evolves to Mo (IV) oxide upon…”
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    Journal Article
  6. 6

    Exploiting Fixed Charge to Control Schottky Barrier Height in Si|Al2O3|MoOx - based Tunnel Diodes by Garland, Ben M., Davis, Benjamin E., Strandwitz, Nicholas C.

    “…The insertion of a tunneling atomic layer deposited (ALD) Al 2 O 3 film between MoO x and p-type Si has been studied to investigate Schottky barrier height…”
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    Conference Proceeding