Search Results - "Garfunkel, E L"

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    High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer by Sharma, Y. K., Ahyi, A. C., Isaacs-Smith, T., Modic, A., Park, M., Xu, Y., Garfunkel, E. L., Dhar, S., Feldman, L. C., Williams, J. R.

    Published in IEEE electron device letters (01-02-2013)
    “…Phosphorous from P 2 O 5 is more effective than nitrogen for passivating the 4H-SiC/SiO 2 interface. The peak value of the field-effect mobility for 4H-SiC…”
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    Journal Article
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    Metallic-to-Nonmetallic Transition of Sodium Coadsorbed With CO sub 2 and H sub 2 O on the Cr sub 2 O sub 3 (111)/Cr(110) Surface by Ventrice, C A, Ehrlich, D, Garfunkel, E L, Dillmann, B, Heskett, D, Freund, H-J

    Published in Physical review. B, Condensed matter (15-11-1992)
    “…Coadsorption of Na with Co sub 2 and H sub 2 O on a thin Cr sub 2 O sub 3 (111) single crystal epitaxially grown on a single-crystal Cr(110) substrate has been…”
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    Journal Article
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