Search Results - "Garduño, Ivan"
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Docosahexaenoic Acid Effect on Prenatal Exposure to Arsenic and Atopic Dermatitis in Mexican Preschoolers
Published in Biological trace element research (01-07-2023)“…Childhood atopic dermatitis (AD) is a chronic and recurrent health problem that involves multiple factors, particularly immunological and environmental. We…”
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Journal Article -
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Temperature dependent compact modeling of gate tunneling leakage current in double gate MOSFETs
Published in Solid-state electronics (01-03-2013)“…[Display omitted] ► We developed the temperature dependent model of direct tunneling leakage current. ► We developed the temperature dependent model of trap…”
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Journal Article -
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Analytical modeling of the gate tunneling leakage for the determination of adequate high- k dielectrics in double-gate SOI MOSFETs at the 22 nm node
Published in Solid-state electronics (01-10-2010)“…In this paper, the gate leakage current in metal-oxide-semiconductor (MOS) junctions/devices/or transistors is modeled and studied in order to find promising…”
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Gate leakage current partitioning in nanoscale double gate MOSFETs, using compact analytical model
Published in Solid-state electronics (01-09-2012)“…► We presented a model of the gate current partitioning into the source and drain for a DG MOSFETs structure. ► Model based on a compact analytical gate…”
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Journal Article -
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Encapsulated Solar Cells Based on PM6:Y7 with Inverted Architecture: Degradation Study
Published in 2024 IEEE Latin American Electron Devices Conference (LAEDC) (08-05-2024)“…In this work is presented the study and analysis of the degradation of encapsulated organic solar cells with an inverted architecture (iOSCs) based on PM6:Y7…”
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Conference Proceeding -
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Development of Drop-On-Demand Inkjet Process for the Fabrication of Thin-Film Printed Devices
Published in 2023 IEEE Latin American Electron Devices Conference (LAEDC) (03-07-2023)“…The main benefit of inkjet printing (IJP) lies in its ability to eliminate the photolithography and etching processes that are fundamental to silicon…”
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Conference Proceeding -
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Compact analytical modeling of the gate leakage current partitioning for Double Gate MOSFET device
Published in 2011 International Semiconductor Device Research Symposium (ISDRS) (01-12-2011)“…In this paper, we have developed and analyzed a compact gate leakage current partitioning model for Nanoscale Double Gate MOSFETs, assuming the gate current is…”
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Conference Proceeding