Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment

We are developing n +-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capaci...

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Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 636; no. 1; pp. S111 - S117
Main Authors: Lindgren, S., Affolder, A.A., Allport, P.P., Bates, R., Betancourt, C., Bohm, J., Brown, H., Buttar, C., Carter, J.R., Casse, G., Chen, H., Chilingarov, A., Cindro, V., Clark, A., Dawson, N., DeWilde, B., Doherty, F., Dolezal, Z., Eklund, L., Fadeyev, V., Ferrèrre, D., Fox, H., French, R., García, C., Gerling, M., Gonzalez Sevilla, S., Gorelov, I., Greenall, A., Grillo, A.A., Hamasaki, N., Hara, K., Hatano, H., Hoeferkamp, M., Hommels, L.B.A., Ikegami, Y., Jakobs, K., Kierstead, J., Kodys, P., Köhler, M., Kohriki, T., Kramberger, G., Lacasta, C., Li, Z., Lynn, D., Maddock, P., Mandić, I., Martinez-McKinney, F., Garcia, S.Martíi, Maunu, R., McCarthy, R., Metcalfe, J., Mikestikova, M., Mikuž, M., Miñano, M., Mitsui, S., O’Shea, V., Parzefall, U., Sadrozinski, H.F.-W., Schamberger, D., Seiden, A., Terada, S., Paganis, S., Robinson, D., Puldon, D., Sattari, S., Seidel, S., Toms, K., Tsionou, D., Unno, Y., Von Wilpert, J., Wormald, M., Wright, J., Yamada, M.
Format: Journal Article
Language:English
Published: Elsevier B.V 21-04-2011
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Summary:We are developing n +-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip ∼1 kΩ, after the integrated luminosity of 6 ab −1, which is twice the luminosity goal.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2010.04.094