Search Results - "Gaquiere, Ch"

Room-temperature terahertz emission from nanometer field-effect transistors by Dyakonova, N., El Fatimy, A., Łusakowski, J., Knap, W., Dyakonov, M. I., Poisson, M.-A., Morvan, E., Bollaert, S., Shchepetov, A., Roelens, Y., Gaquiere, Ch, Theron, D., Cappy, A.

“…Room-temperature generation of terahertz radiation in nanometer gate length InAlAs∕InGaAs and AlGaN∕GaN high-mobility transistors is reported. A well-defined…”
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Room-temperature terahertz emission from nanometerfield-effect transistors by Dyakonova, N., El Fatimy, A., Łusakowski, J., Knap, W., Dyakonov, M. I., Poisson, M.-A., Morvan, E., Bollaert, S., Shchepetov, A., Roelens, Y., Gaquiere, Ch, Theron, D., Cappy, A.

“…Room-temperature generation of terahertz radiation in nanometer gate length In Al As ∕ In Ga As and Al Ga N ∕ Ga N high-mobility transistors is reported. A…”
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Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs by Kuzmik, J, Ostermaier, O, Pozzovivo, G, Basnar, B, Schrenk, W, Carlin, J, Gonschorek, M, Feltin, E, Grandjean, N, Douvry, Y, Gaquière, Ch, De Jaeger, J, Strasser, G, Pogany, D, Gornik, E

“…We correlate dc maximal drain current I DSmax , pulsed output characteristics, rf small-signal and breakdown performance of normally-off InAlN/GaN HEMTs with…”
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Room-temperature terahertz emission from nanometer field-effect transistors by Dyakonova, N., El Fatimy, A., Lusakowskil, J., Knap, W., Dyakonov, M.I., Poisson, M.-A., Morvan, E., Bollaert, S., Shchepetov, A., Roelens, Y., Gaquiere, Ch, Theron, D., Cappy, A.

“…Generation of THz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high mobility transistors is observed at room temperature. Spectral analysis…”
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