Search Results - "Gao, Baohong"

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  1. 1

    Study on the synergistic effect and mechanism of inhibitors benzotriazole and pyrazole on copper surface by Wang, Jing, Gao, Baohong, Liu, Shitong, Liang, Bin, Liu, Mingyu

    Published in Journal of applied electrochemistry (01-08-2023)
    “…In the giant large-scale integrated circuits manufacturing process, chemical mechanical polishing (CMP) for Cu interconnection can lead to chemical corrosion…”
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    Journal Article
  2. 2

    Application of surfactant for facilitating benzotriazole removal and inhibiting copper corrosion during post-CMP cleaning by Tang, Jiying, Liu, Yuling, Wang, Chenwei, Niu, Xinhuan, Tan, Baimei, Gao, Baohong

    Published in Microelectronic engineering (15-12-2018)
    “…Wafer surface is usually contaminated by organic residues, such as benzotriazole(BTA), after chemical mechanical planarization (CMP). Due to the reason that…”
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    Journal Article
  3. 3

    A study on the comparison of CMP performance between a novel alkaline slurry and a commercial slurry for barrier removal by Wang, Chenwei, Liu, Yuling, Tian, Jianying, Gao, Baohong, Niu, Xinhuan

    Published in Microelectronic engineering (01-10-2012)
    “…[Display omitted] ► We have proposed a novel alkaline slurry without inhibitors for barrier CMP. ► The slurry provides lower surface roughness values and good…”
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    Journal Article
  4. 4

    Effect of slurry components on chemical mechanical polishing of copper at low down pressure and a chemical kinetics model by Liu, Xiaoyan, Liu, Yuling, Liang, Yan, Liu, Haixiao, Zhao, Zhiwen, Gao, Baohong

    Published in Thin solid films (31-10-2011)
    “…The practical use of low dielectric constant materials as inter-layer dielectrics is driving the demand for copper chemical mechanical polishing (CMP) at low…”
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    Journal Article
  5. 5

    Kinetics model incorporating both the chemical and mechanical effects on material removal for copper chemical mechanical polishing by Liu, Xiaoyan, Liu, Yuling, Liang, Yan, Zhao, Zhiwen, Gao, Baohong

    Published in Microelectronic engineering (01-03-2012)
    “…A comprehensive model for the copper material removal in a chemical mechanical polishing (CMP) process is presented in which both chemical and mechanical…”
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    Journal Article
  6. 6

    Optimization of slurry components for a copper chemical mechanical polishing at low down pressure using response surface methodology by Liu, Xiaoyan, Liu, Yuling, Liang, Yan, Liu, Haixiao, Hu, Yi, Gao, Baohong

    Published in Microelectronic engineering (2011)
    “…Copper replaced aluminium and the low-dielectric constant material (low- k dielectrics) served as a better isolator, which has become the inevitable developing…”
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    Journal Article
  7. 7

    Effect of arginine-based cleaning solution on BTA residue removal after Cu-CMP by Wang, Qi, Yin, Da, Gao, Baohong, Tian, Siyu, Sun, Xiaoqin, Liu, Mengrui, Zhang, Shihao, Tan, Baimei

    “…[Display omitted] In chemical mechanical polishing (CMP) process, surface defects and contamination will be introduced on the wafer surface due to interfacial…”
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    Journal Article
  8. 8

    Analysis, identification, and application of distribution of relaxation times in CMP slurry by Li, Wenhaoyu, Gao, Baohong, Huo, Jinxiang, He, Bin, He, Yue, Wang, Jianshu

    Published in Electrochimica acta (10-12-2024)
    “…This study delves into the mechanistic roles of oxidants, complexing agents, and inhibitors in slurries through of Distribution of Relaxation Times (DRT)…”
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    Journal Article
  9. 9

    Theoretical and electrochemical analysis on inhibition effect of benzotriazole and 1,2,4-triazole on cobalt surface by Yin, Da, Yang, Liu, Niu, Xinhuan, Ma, Yingzhuo, Liu, Mengrui, Sun, Xiaoqin, Gao, Baohong, Tan, Baimei

    “…The adsorption models of BTA and TAZ on Co (111) surface in aqueous phase were established by Mont Carlo simulation. Nyquist plots of cobalt inhibitors with…”
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    Journal Article
  10. 10

    A study of FTIR and XPS analysis of alkaline‐based cleaning agent for removing Cu‐BTA residue on Cu wafer by Gao, Baohong, Tan, Baimei, Liu, Yuling, Wang, Chenwei, He, Yangang, Huang, Yanyan

    Published in Surface and interface analysis (01-05-2019)
    “…This study is to focus on the benzotriazole (BTA) residue problem in the postchemical mechanical planarization (post‐CMP) cleaning process. The adsorption of…”
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    Journal Article
  11. 11

    Theoretical and electrochemical analysis on inhibition effects of benzotriazole derivatives (un- and methyl) on copper surface by Yin, Da, Yang, Liu, Tan, Baimei, Ma, Tengda, Zhang, Shihao, Wang, Yazhen, Guo, Lei, Gao, Baohong, He, Yangang

    Published in Journal of molecular structure (05-11-2021)
    “…•Quantum chemical parameters of BTA and M-BTA were evaluated by DFT theory.•N7 and N8 atoms of BTA and M-BTA are the coordination sites of the…”
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    Journal Article
  12. 12

    MicroRNA-432 is downregulated in cervical cancer and directly targets FN1 to inhibit cell proliferation and invasion by Wang, Shanzong, Gao, Baohong, Yang, Hailin, Liu, Xuejian, Wu, Xia, Wang, Weijuan

    Published in Oncology letters (01-08-2019)
    “…Numerous studies have identified the dysregulation of microRNAs (miRNAs) in cervical cancer, and dysregulated miRNAs are involved in regulating a number of…”
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    Journal Article
  13. 13

    Recent advances and future developments in PVA brush scrubbing cleaning: A review by Zhang, Shihao, Wang, Fangyuan, Tan, Baimei, Li, Wei, Gao, Baohong, He, Yangang

    “…As semiconductor integrated circuits (SICs) have been developed to scale down to obtain higher integration and better performance, more chemical mechanical…”
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    Journal Article
  14. 14

    Application of an optimized alkaline cleaning solution for inhibitor removal during the post-CMP process: Performance evaluation and mechanism analysis by Li, Wei, Tan, Baimei, Zhang, Shihao, Gao, Baohong, Ma, Boao, Guo, Lei, Du, Haoyu, Wang, Fangyuan, Wang, Xiaolong

    Published in Journal of molecular liquids (01-01-2023)
    “…[Display omitted] •A novel post-CMP alkaline cleaning solution was developed for BTA residue removal.•This cleaning solution was proved also helps to achieve a…”
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    Journal Article
  15. 15

    Experimental and computational studies on TAD as an additive of copper chemical mechanical polishing by Huo, Jinxiang, Gao, Baohong, He, Bin, Li, Wenhaoyu, Liang, Bin, Liu, Mingyu, Chen, Xuhua

    Published in Surfaces and interfaces (01-07-2024)
    “…With its low resistivity and high mobility, copper (Cu) is widely used as a metallic material to interconnect processes in the fabrication of integrated…”
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    Journal Article
  16. 16

    Design of a Visual Detection Method for Prohibited Item Packages Detection Based on the YOLO Model by Zhu, Hanning, Gao, Baohong, Qiao, Langchao, Ma, Yanze, Feng, Wentao, Wu, Jiaji

    “…In this paper, we introduce a prohibited item package detection system based on the YOLO model. Utilizing the state-of-the-art YOLO as its core object…”
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    Conference Proceeding
  17. 17

    Study on Infrared Spectrum Detection and Analysis of BTA Residual after Copper CMP by Wang, Qi, Tan, Baimei, Tian, Siyu, Han, Chunyu, Yang, Liu, Gao, Baohong

    “…During Cu CMP process BTA is widely used as a corrosion inhibitor, reacts with Cu and forms a strong hydrophobic Cu(II)-BTA complex, which causes severe device…”
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    Conference Proceeding
  18. 18

    Study on Different Surfactants for Post CMP Cleaning of Novel Barrier by Tian, Siyu, Tan, Baimei, Wang, Qi, Han, Chunyu, Yang, Liu, Gao, Baohong

    “…The effects of different concentration of chelating agent and different surfactants and concentration changes on the removal of BTA and particles on copper…”
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    Conference Proceeding