Search Results - "Ganguli, T"

Investigation of composition of boron carbide thin films by resonant soft x-ray reflectivity by Rao, P.N., Gupta, R.K., Saravanan, K., Bose, A., Joshi, S.C., Ganguli, T., Rai, S.K.

“…Boron carbide thin films of different thicknesses deposited by ion beam sputtering were studied. The deposited films were characterized by grazing incidence…”
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X-ray photoelectron spectroscopy and spectroscopic ellipsometry analysis of the p-NiO/n-Si heterostructure system grown by pulsed laser deposition by Chaoudhary, S., Dewasi, A., Ghosh, S., Choudhary, R.J., Phase, D.M., Ganguli, T., Rastogi, V., Pereira, R.N., Sinopoli, A., Aïssa, B., Mitra, A.

“…•Band offset values of NiO/Si has been done by using X-ray photoelectron spectroscopy (XPS).•Energy band diagram is constructed by using the results obtained…”
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Learnings from Kolkata East–West Metro Corridor Project by Phadtare, Milind T., Ganguli, T. K., Biswas, Tamal

“…The case deals with the concept of the diamond model of project management, project failure and stakeholder management. It aims to improve the conceptual…”
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Effect of γ-ray irradiation on breakdown voltage, ideality factor, dark current and series resistance of GaAs p–i–n diode by Pillai, Vinu R.V., Khamari, Shailesh K., Dixit, V.K., Ganguli, T., Kher, S., Oak, S.M.

“…Effect of 60Co γ-ray radiation with 1×1016γ/cm2 fluence on the ideality factor, saturation current and series resistance for two separate junctions p–i and i–n…”
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VARIATIONS IN THE COX AND STRACK CURVE FOR NON-ZERO METAL RESISTANCE by Ahmad, M., Ganguli, T., Major, S., Roy, N.R., Arora, B.M.

“…A correction to the Cox and Strack curve for finite resistance of a contact metal on semiconductors was considered. Here we present the calculated resistance…”
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Effect of [gamma]-ray irradiation on breakdown voltage, ideality factor, dark current and series resistance of GaAs p-i-n diode by Pillai, Vinu RV, Khamari, Shailesh K, Dixit, V K, Ganguli, T, Kher, S, Oak, S M

“…Effect of 60Co [gamma]-ray radiation with 1X10 16 [gamma]/cm2 fluence on the ideality factor, saturation current and series resistance for two separate…”
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Determination of contact resistivity by a modified Cox and Strack method in case of finite metal sheet resistance by Ahmad, M, Ganguli, T, Patil, S, Major, S, Patro, Y.G.K, Arora, B.M

“…This paper presents theoretical and experimental results concerning resistance of contact metal as a source of error in the detemination of specific contact…”
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Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si by Dixit, V.K., Ganguli, Tapas, Sharma, T.K., Singh, S.D., Kumar, Ravi, Porwal, S., Tiwari, Pragya, Ingale, Alka, Oak, S.M.

“…A two-step growth process of gallium phosphide (GaP) epilayer on silicon substrate is carried out using metal organic vapor-phase epitaxy (MOVPE). This process…”
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Regulation of voltage-gated Ca super(2) super(+) channels by lipids by Roberts-Crowley, M L, Mitra-Ganguli, T, Liu, L, Rittenhouse, A R

“…Great skepticism has surrounded the question of whether modulation of voltage-gated Ca super(2) super(+) channels (VGCCs) by the polyunsaturated free fatty…”
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Pulsed laser deposition of TiO2 for MOS gate dielectric by PAILY, Roy, DASGUPTA, Amitava, DASGUPTA, Nandita, BHATTACHARYA, Pijush, MISRA, Pankaj, GANGULI, Tapas, KUKREJA, Lalit M, BALAMURUGAN, A. K, RAJAGOPALAN, S, TYAGI, A. K

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Effect of oxygen pressure and laser fluence during pulsed laser deposition of TiO2 on MTOS (Metal–TiO2–SiO2–Si) capacitor characteristics by Paily, R, DasGupta, A, DasGupta, N, Ganguli, T, Kukreja, L M

“…In the present work, we have studied the effect of different deposition parameters, e.g., laser fluence as well as the pressure of oxygen during Pulsed Laser…”
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Valence bands offset between depleted semiconductors measured by photoelectron spectroscopy by Kumar, Shailendra, Jha, S.N, Jagannath, Ganguli, Tapas, Bhaskara Rao, S.V.N, Das, N.C

“…A modified method to measure the valence bands offset by photoelectron spectroscopy (PES) between low doped and depleted semiconductors have been used. The…”
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Investigation of thickness dependent composition of boron carbide thin films by resonant soft x-ray reflectivity by Rao, P. N, Gupta, R. K, Saravanan, K, Bose, A, Joshi, S. C, Ganguli, T, Rai, S. K

“…Boron carbide thin films of different thicknesses deposited by ion beam sputtering were studied. The deposited films were characterized by grazing incidence…”
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Surface photovoltage spectroscopy of n-n+ and p-n+ AlGaAs/GaAs heterojunctions by Kumar, Shailendra, Ganguli, Tapas, Bhattacharya, Pijush, Roy, U. N., Chandvankar, S. S., Arora, B. M.

“…A comparative study of n-n+ and p-n+ semiconductor heterojunctions has been done using the surface photovoltage spectroscopy (SPS) in the chopped light…”
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Crystalline quality of ZnSe thin films grown on GaAs by pulsed laser deposition in He and Ar ambients by Ganguli, Tapas, Vedvyas, M., Bhattacharya, P., Kukreja, L.M., Ingale, Alka, Adhi, K.P., Chandrashekharan, K.S., Arora, B.M., Rustagi, K.C.

“…Epitaxial films of ZnSe with a thickness of approximately 1 μm, were deposited on (001) semi-insulating GaAs by pulsed laser deposition using a third harmonic…”
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Study of the microstructure in MOVPE grown InN epitaxial layers by high resolution x-ray diffraction by Ganguli, T., Kadir, A., Gokhale, M., Kumar, R., Shah, A.P., Arora, B.M., Bhattacharya, A.

“…We have carried out detailed study of the microstructure of InN epitaxial layers using high resolution XRD measurements. The type of dislocations and their…”
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Studies on GaAs/AlGaAs based (p and n-type) quantum well infrared photodetector structures grown using MOVPE by Dixit, V.K., Singh, S.D., Sharma, T.K., Ganguli, T., Jangir, R., Pal, S., Khattak, B.Q., Srivastava, A.K., Srivastava, H., Oak, S.M.

“…GaAs/AlGaAs based (p and n-type) 50 periods quantum well infrared detector structures were grown using metal organic vapour phase epitaxy (MOVPE). The…”
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ON HODGE STRUCTURES OF QUASITORIC ORBIFOLDS by Ganguli, Saibal

“…We give Hodge structures on quasitoric orbifolds. We define orbifold Hodge numbers and show a correspondence of orbifold Hodge numbers for crepant resolutions…”
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Quadratic B-spline finite element method for a rotating non-uniform Rayleigh beam by Panchore, Vijay, Ganguli, Ranjan

“…The quadratic B-spline finite element method yields mass and stiffness matrices which are half the size of matrices obtained by the conventional finite element…”
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Tailoring the second mode of Euler-Bernoulli beams: an analytical approach by Sarkar, Korak, Ganguli, Ranjan

“…In this paper, we study the inverse mode shape problem for an Euler-Bernoulli beam, using an analytical approach. The mass and stiffness variations are…”
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