Search Results - "Gang Ju, Zhen"

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    Influence of n -type versus p -type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes by Ji, Yun, Zhang, Zi-Hui, Kyaw, Zabu, Tiam Tan, Swee, Gang Ju, Zhen, Liang Zhang, Xue, Liu, Wei, Wei Sun, Xiao, Volkan Demir, Hilmi

    Published in Applied physics letters (29-07-2013)
    “…The effect of n-AlGaN versus p-AlGaN electron-blocking layers (EBLs) on the performance of InGaN/GaN light-emitting diodes is studied in this work…”
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    Journal Article
  3. 3

    Nonradiative recombination--critical in choosing quantum well number for InGaN/GaN light-emitting diodes by Zhang, Yi Ping, Zhang, Zi-Hui, Liu, Wei, Tan, Swee Tiam, Ju, Zhen Gang, Zhang, Xue Liang, Ji, Yun, Wang, Lian Cheng, Kyaw, Zabu, Hasanov, Namig, Zhu, Bin Bin, Lu, Shun Peng, Sun, Xiao Wei, Demir, Hilmi Volkan

    Published in Optics express (09-02-2015)
    “…In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and…”
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    Journal Article
  4. 4

    Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer by Ju, Zhen Gang, Liu, Wei, Zhang, Zi-Hui, Tan, Swee Tiam, Ji, Yun, Kyaw, Zabu, Zhang, Xue Liang, Lu, Shun Peng, Zhang, Yi Ping, Zhu, Bin Bin, Hasanov, Namig, Sun, Xiao Wei, Demir, Hilmi Volkan

    Published in ACS photonics (16-04-2014)
    “…InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a…”
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    Journal Article
  5. 5

    On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes by Kyaw, Zabu, Zhang, Zi-Hui, Liu, Wei, Tan, Swee Tiam, Ju, Zhen Gang, Zhang, Xue Liang, Ji, Yun, Hasanov, Namig, Zhu, Binbin, Lu, Shunpeng, Zhang, Yiping, Sun, Xiao Wei, Demir, Hilmi Volkan

    Published in Optics express (13-01-2014)
    “…N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both…”
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    Journal Article