Search Results - "Gang Ju, Zhen"
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Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes
Published in Applied physics letters (21-04-2014)“…A three-step graded undoped-InGaN layers embedded between the GaN last quantum barrier layer and the p-AlGaN electron blocking layer was proposed and its…”
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Influence of n -type versus p -type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes
Published in Applied physics letters (29-07-2013)“…The effect of n-AlGaN versus p-AlGaN electron-blocking layers (EBLs) on the performance of InGaN/GaN light-emitting diodes is studied in this work…”
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Nonradiative recombination--critical in choosing quantum well number for InGaN/GaN light-emitting diodes
Published in Optics express (09-02-2015)“…In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and…”
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Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
Published in ACS photonics (16-04-2014)“…InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a…”
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On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
Published in Optics express (13-01-2014)“…N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both…”
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