Search Results - "Gamiz, F"

Mechanical and thermal properties of graphene modified asphalt binders by Moreno-Navarro, F, Sol-Sanchez, M, Gamiz, F, Rubio-Gamez, M.C

“…•Graphene produces a more elastic response in asphalt binders.•Elastomers provide a more effective recovery capacity than graphene.•Graphene reduces the…”
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Sequential treadmill exercise and cognitive training synergistically increase adult hippocampal neurogenesis in mice by Ávila-Gámiz, F., Pérez-Cano, A.M., Pérez-Berlanga, J.M., Mullor-Vigo, R.M., Zambrana-Infantes, E.N., Santín, L.J., Ladrón de Guevara-Miranda, D.

“…•Sequential physical and cognitive training has synergic effects on adult neurogenesis.•Physical exercise acutely increases hippocampal cell…”
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Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel FET Including Quantum Confinement by Padilla, J. L., Alper, C., Godoy, A., Gamiz, F., Ionescu, A. M.

“…We investigate the effect of asymmetric configurations on the heterogate germanium electron-hole bilayer tunnel FET (TFET) and assess the improvement that they…”
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A Simple Approach to Quantum Confinement in Tunneling Field-Effect Transistors by Padilla, J. L., Gamiz, F., Godoy, A.

“…We present an approach to account for quantum confinement in tunneling field-effect transistors (TFETs) based on the use of a nonlocal band-to-band tunneling…”
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Improved Retention Characteristics of Z2-FET Employing Half Back-Gate Control by Kwon, S., Navarro, C., Gamiz, F., Galy, P., Cristoloveanu, S., Kim, Y. -T., Ahn, J.

“…The structure of zero impact ionization, zero subthreshold swing field-effect transistor (Z 2 -FET) has been modified by stacking a half side of back-gate (BG)…”
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Thorough Understanding of Retention Time of Z2FET Memory Operation by Duan, M., Navarro, C., Cheng, B., Adamu-Lema, F., Wang, X., Georgiev, V. P., Gamiz, F., Millar, C., Asenov, A.

“…A recently reported zero impact ionization and zero subthreshold swing device Z2FET is a promising candidate for capacitor-less dynamic random access memory…”
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Comment on "Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening" by Padilla, J. L., Palomares, A., Gamiz, F.

“…In this comment, we assess the validity of the simulation approach implemented by Beneventi et al. to account for the effects of subband discretization of…”
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3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs by Navarro, C., Navarro, S., Marquez, C., Padilla, J. L., Galy, P., Gamiz, F.

“…3-D numerical technology computer-aided design simulations, based on experimental results, are performed to study the origin of the large Z 2 -FET dynamic…”
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Memory Operations of Zero Impact Ionization, Zero Subthreshold Swing FET Matrix Without Selectors by Kwon, S., Navarro, C., Galy, P., Cristoloveanu, S., Gamiz, F., Ahn, J., Kim, Y.-T.

“…This work experimentally demonstrates the memory operations of a Z 2 -FET (Zero impact ionization, Zero subthreshold swing) matrix without the use of…”
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Effect of confined acoustic phonons on the electron mobility of rectangular nanowires by Tienda-Luna, I. M., Ruiz, F. G., Godoy, A., Donetti, L., Martínez-Blanque, C., Gámiz, F.

“…In this paper, we assess the impact of the confined acoustic phonon boundary conditions on the electron mobility of semiconductor nanowires. Specifically, we…”
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Memory Operation of Z²-FET Without Selector at High Temperature by Kwon, S., Navarro, C., Gamiz, F., Cristoloveanu, S., Kim, Y.-T., Ahn, J.

“…The electrical performance of Z 2 -FET and memory operations of matrix are demonstrated at high temperatures up to 125 °C. The sharp subthreshold slope is…”
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A-RAM Memory Cell: Concept and Operation by Rodriguez, N, Gamiz, F, Cristoloveanu, S

“…Capacitorless single-transistor (1T) DRAM cells are envisioned for replacing the conventional DRAMs where the storage capacitor can hardly be further…”
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A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration by Diab, A., Fernández, C., Ohata, A., Rodriguez, N., Ionica, I., Bae, Y., Van Den Daele, W., Allibert, F., Gámiz, F., Ghibaudo, G., Mazure, C., Cristoloveanu, S.

“…► Implementation of a novel characterization technique for bare SOI, based on split C-V measurement using pseudo-MOSFET. ► The effective mobility of electrons…”
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Analytic Potential and Charge Model of Semiconductor Quantum Wells by Marin, E. G., Tienda-Luna, I. M., Ruiz, F. G., Gonzalez-Medina, J. M., Godoy, A., Gamiz, F.

“…An analytical model is proposed to determine the potential and the electron concentration in 1D-confined quantum-well structures. This model is applicable to…”
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Ethics of care: Assessment of the ethical issues in the protocols or consensuses on mechanical restraint in force in Spain by Román-Gálvez, R M, Gámiz-González, F, Matas-Matas, F R, Rivas-Arquillo, M M, Cobos-Vargas, A, Bueno-Cavanillas, A

“…Mechanical restraints are widely used in health care practice, despite the numerous ethical conflicts they raise. The aim of this study is to evaluate the…”
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Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI by Sampedro, C., Gámiz, F., Godoy, A., Valín, R., García-Loureiro, A., Ruiz, F.G.

“…State-of-the-Art devices in mass production are approaching to the performance limit of traditional MOSFET as the critical dimensions are shrunk. Multi-gate…”
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Taste and olfactory status in a gourmand with a right amygdala lesion by Gallo, M., Gámiz, F., Perez-García, M., del Moral, R. G., Rolls, E. T.

“…In a patient with a lesion of the right amygdala and temporal pole who had the characteristics of the gourmand syndrome, sensory and hedonic testing was…”
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Simulation of Fabricated 20-nm Schottky Barrier MOSFETs on SOI: Impact of Barrier Lowering by Padilla, J. L., Knoll, L., Gamiz, F., Zhao, Q. T., Godoy, A., Mantl, S.

“…In this paper, we develop a procedure to include in device simulators the barrier lowering (BL) effects that appear in the drain and source contacts of…”
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Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects by Roldan, J.B., Godoy, A., Gamiz, F., Balaguer, M.

“…A semiempirical model was developed for calculating the inversion charge of cylindrical surrounding gate transistors (SGTs), including quantum effects. To…”
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Revisited Pseudo-MOSFET Models for the Characterization of Ultrathin SOI Wafers by Rodriguez, N., Cristoloveanu, S., Gamiz, F.

“…The pseudo-MOS transistor (Psi-MOSFET characteristics) is a simple and successful technique for the monitoring of silicon-on-insulator (SOI) wafer quality. To…”
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