Search Results - "Galzerani, J C"

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  1. 1

    Crystalline quality and phase purity of CVD diamond films studied by Raman spectroscopy by Fortunato, W, Chiquito, A. J, Galzerani, J. C, Moro, J. R

    Published in Journal of materials science (01-09-2007)
    “…Two series of diamond films grown—at different temperatures—by two chemical vapor deposition (CVD) methods, i.e., hot filament (HFCVD) and microwave-plasma…”
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    Journal Article
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    A comparative study of p-type diamond films using Raman and transport measurements by Fortunato, W., Chiquito, A.J., Galzerani, J.C., Moro, J.R.

    Published in Thin solid films (08-04-2005)
    “…The influence of deposition temperature in the properties of synthetic diamond films grown by two different chemical vapor deposition (CVD) techniques,…”
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    Journal Article
  3. 3

    Coherence of elementary excitations in a disordered electron system by PUSEP, Yu. A, RIBEIRO, M. B, CARRASCO, V. E, ZANELATTO, G, GALZERANI, J. C

    Published in Physical review letters (08-04-2005)
    “…The localization properties of the single-particle and collective electron excitations were investigated in the intentionally disordered GaAs/AlGaAs…”
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    Journal Article
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    Ge/Si Quantum Dots Superlattices Grown at Different Temperatures and Characterized by Raman Spectroscopy and Capacitance Measurements by Zahn, Dietrich R. T., Galzerani, J. C., Rodrigues, A. D., Pchelyakov, O. P., Ulyanov, V. V., Nikiforov, A. I., Chiquito, A. J., Zanelatto, G., Milekhin, Alexander

    Published in Advances in condensed matter physics (01-01-2012)
    “…Ge/Si heterostructures with Ge self-assembled quantum dots (SAQDs) grown at various temperatures by molecular beam epitaxy were investigated using resonant…”
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    Journal Article
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    Optical phonons in InAs and AlAs quantum dot structures by Milekhin, A.G, Toropov, A.I, Bakarov, A.K, Ladanov, M.Yu, Zanelatto, G, Galzerani, J.C, Schulze, S, Zahn, D.R.T

    Published in Applied surface science (15-07-2004)
    “…We present a comparative study of InAs/AlAs periodical structures with InAs and AlAs quantum dots (QD’s) using infrared and Raman spectroscopies. Raman spectra…”
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    Journal Article
  7. 7

    Raman investigation of plasmon localization in GaAs/AlGaAs superlattices by Rodrigues, A.D., Pusep, Yu.A., Galzerani, J.C.

    Published in Vibrational spectroscopy (18-11-2010)
    “…This work presents a Raman analysis of the influence of disorder in the plasmon localization. The disorder strength control was achieved by growing…”
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    Journal Article
  8. 8

    Study of the segregation process in GaAs/AlAs superlattices using Raman spectroscopy by Zanelato, G., Pusep, Yu. A., Galzerani, J. C., Lubyshev, D. I., González-Borrero, P. P.

    Published in Journal of Raman spectroscopy (01-10-2001)
    “…A Raman scattering study of cation segregation in GaAs/AlAs ultrathin‐layer superlattices grown with different temperatures and As pressures is reported. The…”
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    Journal Article
  9. 9

    Atomic-scale characterization of interfaces in the GaAs/AlGaAs superlattices by Pusep, Yu.A., da Silva, S.W., Galzerani, J.C., Lubyshev, D.I., Basmaji, P., Milekhin, A.G., Preobrazhenskii, V.V., Semyagin, B.R., Marahovka, I.I.

    “…We present a new interpretation of the Raman spectra of GaAs/AlAs ultrathin-layer superlattices based on the microscopic analysis of the optical vibrational…”
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    Journal Article Conference Proceeding
  10. 10

    Raman spectroscopy characterization of InAs self-assembled quantum dots by Galzerani, J.C., Pusep, Y.A.

    Published in Physica. B, Condensed matter (01-05-2002)
    “…Intensive Raman spectroscopy studies of the InAs self-assembled quantum dots grown on GaAs in different conditions were performed. Undoped multi-layered…”
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    Journal Article
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    Vibrational spectroscopy of InAs and AlAs quantum dot structures by Milekhin, A.G, Toropov, A.I, Bakarov, A.K, Ladanov, M.Yu, Zanelatto, G, Galzerani, J.C, Schulze, S, Zahn, D.R.T

    “…In this paper we present an experimental comparative study of InAs/AlAs periodical structures with InAs and AlAs quantum dots (QDs) by means of infrared and…”
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    Journal Article
  14. 14

    Carrier confinement in an ultrathin barrier GaAs/AlAs superlattice probed by capacitance–voltage measurements by Chiquito, A.J, Pusep, Yu.A, Mergulhão, S, Galzerani, J.C

    “…The capacitance–voltage characteristics of (GaAs) m /(AlAs) n superlattices and of a GaAs/AlGaAs multiple quantum well system were used as a tool to probe the…”
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    Journal Article
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    Physical properties of nanofluid suspension of ferromagnetic graphite with high Zeta potential by Souza, N.S., Rodrigues, A.D., Cardoso, C.A., Pardo, H., Faccio, R., Mombru, A.W., Galzerani, J.C., de Lima, O.F., Sergeenkov, S., Araujo-Moreira, F.M.

    Published in Physics letters. A (09-01-2012)
    “…We report on the magnetic properties and stability of nanofluid ferromagnetic graphite (NFMG) studied through the measurements of its magnetization hysteresis…”
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    Journal Article
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    Raman probing of the wave function of collective excitations in the presence of disorder by Pusep, Yu.A., Sokolov, S.S., Fortunato, W., Galzerani, J.C., Leite, J.R.

    Published in Physica. B, Condensed matter (01-12-2001)
    “…The spatial extents of the wave functions of the collective plasmon–LO phonon excitations were studied as a function of the doping concentration and the…”
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    Journal Article
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    Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy by Zanelato, G., Pusep, Yu.A., Galzerani, J.C., Lubyshev, D.I., González-Borrero, P.P.

    “…The Raman spectra of the optical confined phonons in the GaAs/AlAs ultra-thin layer superlattices grown with different growth conditions were used to determine…”
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    Fano-like electron–phonon interference in δ-doping GaAs superlattices by Pusep, Yu.A., Silva, M.T.O., Galzerani, J.C., da Silva, S.W., Scolfaro, L.M.R., Enderlein, R., Quivy, A.A., Lima, A.P., Leite, J.R.

    Published in Superlattices and microstructures (01-05-1998)
    “…The interaction between electron excitations and LO phonons is studied by Raman scattering inδ-doping GaAs superlattices. The Raman spectra measured close to…”
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    Journal Article