Search Results - "Galvano, Maurizio" :: Katalog Arama

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Comparison of the parasitic impedances from the drain‐source path of power transistor packages at up to 2 GHz by Moldaschl, Thomas, Woetzel, Stefan, Latella, Riccardo, Galvano, Maurizio, Binder, Alfred

Published in Engineering reports (Hoboken, N.J.) (01-05-2022)
“…In this article, we compare several concepts for gallium‐nitride (GaN) power high electron mobility transistor (HEMT) packages in terms of their…”

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A Novel Integrated Step-Up Hybrid Converter With Wide Conversion Ratio by Marconi, Stefano, Spiazzi, Giorgio, Bevilacqua, Andrea, Galvano, Maurizio

Published in IEEE transactions on power electronics (01-03-2020)
“…In this paper, a novel topology combining reconfigurability and hybridization is presented. Reconfigurability allows the proposed converter to operate in three…”

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A New Data Fitting Method for Parasitic Impedances of Power Transistor Packages using Two-Port S-Parameter Measurements by Moldaschl, Thomas, Woetzel, Stefan, Galvano, Maurizio, Mayer, Christoph, Hackl, Herbert, Binder, Alfred

Published in 2022 IEEE 7th Southern Power Electronics Conference (SPEC) (05-12-2022)
“…The parasitic inductances, resistances and capacitances of power transistor packages play a vital role in power transistor applications. They lead to increased…”

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