Search Results - "Galloway, K.F"

Nanodiamond Lateral VFEM Technology for Harsh Environments by Kang, W.P., Davidson, J.L., Subramanian, K., Choi, B.K., Galloway, K.F.

“…This paper reports the first total dose tests on a nanocrystalline diamond lateral vacuum field emission microelectronics (VFEM) technology. This technology…”
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Diamond Vacuum Electronic Device Behavior After High Neutron Fluence Exposure by Davidson, J.L., Weng Poo Kang, Subramanian, K., Holmes-Siedle, A.G., Reed, R.A., Galloway, K.F.

“…This paper reports the first neutron exposure on diamond electronic test structures for their possible application in very high fluence neutron conditions. The…”
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Characterization and CMRR Modeling of a Carbon-Nanotube Field-Emission Differential Amplifier by Yong Mui Wong, Weng Poo Kang, Davidson, J.L., Kerns, D.V., Huang, J.H., Galloway, K.F.

“…A novel vacuum field-emission differential amplifier (diff-amp) based on carbon-nanotube (CNT) emitters has been developed, modeled, and its ac performance…”
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Total dose effects in a linear Voltage regulator by Adell, P.C., Schrimpf, R.D., Holman, W.T., Todd, J.L., Caveriviere, S., Cizmarik, R.R., Galloway, K.F.

“…Experiments and simulations are used to analyze the total-dose response of a linear voltage regulator. Degradation of the dynamic output range of the error…”
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Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors by Chen, D.K., Mamouni, F.E., Zhou, X.J., Schrimpf, R.D., Fleetwood, D.M., Galloway, K.F., Lee, S., Seo, H., Lucovsky, G., Jun, B., Cressler, J.D.

“…We have performed an experimental study of the effects of ionizing radiation and bias-temperature stress on Si MOS devices with HfSiON gate dielectrics. We…”
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Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics by Massengill, L.W., Choi, B.K., Fleetwood, D.M., Schrimpf, R.D., Galloway, K.F., Shaneyfelt, M.R., Meisenheimer, T.L., Dodd, P.E., Schwank, J.R., Lee, Y.M., Johnson, R.S., Lucovsky, G.

“…Presents experimental results on single-event-induced breakdown in sub-5-nm plasma-enhanced SiO/sub 2/, nitrided SiO/sub 2/, Al/sub 2/O/sub 3/, HfO/sub 2/, and…”
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Test Circuit for Measuring Pulse Widths of Single-Event Transients Causing Soft Errors by Narasimham, B., Gadlage, M.J., Bhuva, B.L., Schrimpf, R.D., Massengill, L.W., Holman, W.T., Witulski, A.F., Galloway, K.F.

“…A novel on-chip test circuit to measure single-event transient (SET) pulse widths has been developed and implemented in IBM 130-nm and 90-nm processes for…”
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Total-dose and single-event effects in DC/DC converter control circuitry by Adell, P.C., Schrimpf, R.D., Holman, W.T., Boch, J., Stacey, J., Ribero, P., Sternberg, A., Galloway, K.F.

“…Total-dose and single-event effects in the linear control circuitry of DC/DC power converters are examined. Catastrophic failure, induced by error-amplifier…”
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Total-dose and single-event effects in switching DC/DC power converters by Adell, P.C., Schrimpf, R.D., Choi, B.K., Holman, W.T., Attwood, J.P., Cirba, C.R., Galloway, K.F.

“…Total-dose and single-event effects in discrete switching DC/DC power converters are examined using a combination of circuit measurements and simulations. The…”
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Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation by Choi, B.K., Fleetwood, D.M., Schrimpf, R.D., Massengill, L.W., Galloway, K.F., Shaneyfelt, M.R., Meisenfieimer, T.L., Dodd, P.E., Schwank, J.R., Lee, Y.M., John, R.S., Lucovsky, G.

“…High-energy ion-irradiated 3.3-nm oxynitride film and 2.2-nm SiO/sub 2/-film MOS capacitors show premature breakdown during subsequent electrical stress. This…”
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High-impact papers presented at the IEEE Nuclear and Space Radiation Effects Conference: the view in 2003 by Galloway, K.F.

“…This paper identifies a selection of papers presented at the NSREC and published in the IEEE TRANSACTIONS ON NUCLEAR SCIENCE that have had measurable impact on…”
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Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides by Youk, G.U., Khare, P.S., Schrimpf, R.D., Massengill, L.W., Galloway, K.F.

“…Radiation enhanced drain induced barrier lowering (DIBL) was experimentally observed and verified by 3D simulations for submicron devices with trench isolation…”
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A review of the techniques used for modeling single-event effects in power MOSFETs by Johnson, G.H., Palau, J.M., Dachs, C., Galloway, K.F., Schrimpf, R.D.

“…Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOSFETs). Single-event effects (SEE), namely,…”
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A hydrogen-transport-based interface-trap-generation model for hot-carrier reliability prediction by Pagey, M.P., Schrimpf, R.D., Galloway, K.F., Nicklaw, C.J., Ikeda, S., Kamohara, S.

“…Hot-carrier-induced interface-trap generation in n-channel MOSFETs is known to be related to hydrogen-mediated processes. We present a model for interface-trap…”
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Model for high-temperature radiation effects in n-p-n bipolar-junction transistors by Boch, J., Saigne, F., Mannoni, V., Giustino, F., Schrimpf, R.D., Dusseau, L., Galloway, K.F., Fesquet, J., Gasiot, J., Ecoffet, R.

“…A model is proposed to evaluate both the optimum temperature (leading to the maximum degradation of the device) and the degradation induced by high-temperature…”
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The impact of mechanical stress on the total-dose response of linear bipolar transistors with various passivation layers by Cizmarik, R.R., Schrimpf, R.D., Fleetwood, D.M., Galloway, K.F., Platteter, D.G., Shaneyfelt, M.R., Pease, R.L., Boch, J., Ball, D.R., Rowe, J.D., Maher, M.C.

“…In this work, we investigate how externally applied mechanical stress impacts the total dose hardness and enhanced low-dose-rate sensitivity of linear bipolar…”
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Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature by Boch, J., Saigne, E., Maurel, T., Giustino, F., Dusseau, L., Schrimpf, R.D., Galloway, K.F., David, J.P., Ecoffet, R., Fesquet, J., Gasiot, J.

“…The effect of high-temperature irradiation on commercial bipolar junction transistors has been studied for four dose rates. The experimental data presented in…”
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Test structures for analyzing proton radiation effects in bipolar technologies by Barnaby, H.J., Schrimpf, R.D., Galloway, K.F., Ball, D.R., Pease, R.L., Fouillat, P.

“…Structures integrated onto a BiCMOS test chip are specially designed to characterize the complex mechanisms related to proton radiation response in bipolar…”
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Evaluation of MOS devices' total dose response using the isochronal annealing method by Saigne, F., Dusseau, L., Fesquet, J., Gasiot, J., Ecoffet, R., Schrimpf, R.D., Galloway, K.F.

“…We irradiated and then annealed 4049 CMOS inverters from four different manufacturers using the isochronal annealing method. From one manufacturer to another,…”
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Total dose effects in composite nitride-oxide films by Sung-Chul Lee, Raparla, A., Li, Y.F., Gasiot, G., Schrimpf, R.D., Fleetwood, D.M., Galloway, K.F., Featherby, M., Johnson, D.

“…Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A…”
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