Search Results - "Gallatin, G."
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1
Statistical limitations of printing 50 and 80 nm contact holes by EUV lithography
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-11-2003)“…Nanoscale photolithography requires accurate formation of very small resist images using high energy photons and a high sensitivity resist. Historically it has…”
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2
Thermal distortion predictions of a silicon wafer during exposure in a SCALPEL tool
Published in Microelectronic engineering (01-06-2000)“…Lucent Technologies Bell Laboratories is developing a projection electron lithography system known as SCALPEL for post-optical lithography. SCALPEL employs a…”
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3
Marks for SCALPEL ® tool optics optimization
Published in Microelectronic engineering (01-06-2000)“…A method for optimizing the electron optics of the SCALPEL exposure tool is described. The method uses the SCALPEL mark detection method with a grating mark as…”
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4
Mask-membrane impact on image blur in SCALPEL
Published in Microelectronic engineering (01-09-2001)“…Electron inelastic scattering in thin films is briefly discussed. It is found that in thin films of interest the plasmon generation by an energetic electron is…”
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5
Surface-emitting distributed feedback semiconductor laser
Published in Applied physics letters (17-08-1987)“…Electrically pumped, surface-emitting distributed feedback lasers were for the first time demonstrated without any facet reflections. The devices contained…”
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6
CMOS compatible alignment marks for the SCALPEL proof of lithography tool
Published in Microelectronic engineering (01-05-1999)“…SCALPEL alignment marks have been fabricated in a SiO 2/WSi 2 structure using SCALPEL lithography and plasma processing. The positions of the marks were…”
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7
Analytical model of the “Shot Noise” effect in photoresist
Published in Microelectronic engineering (01-05-1999)“…Decreasing feature size implies increased sensitivity to statistical fluctuations in various process parameters such as dose and the number of relevant bonds…”
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8
Initial wafer heating analysis for a SCALPEL lithography system
Published in Microelectronic engineering (1999)“…A high-throughput SCALPEL tool will employ a typical exposure current of 30 μA and electron column potential of 100 KV, delivering power up to ∼3 W through a…”
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9
Simulations of a ring resonator free-electron laser
Published in IEEE journal of quantum electronics (01-01-1989)“…A relatively high gain ( approximately=25 to 40%) free-electron laser (FEL) with an optical ring resonator is simulated using the code FELEX. The laser system…”
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Analytical-based solutions for SCALPEL wafer heating
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-11-2000)“…When operating in high-throughput conditions, SCALPELs 100 keV electron beam causes significant dynamic wafer deformation. To complement extensive finite…”
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11
Design and test of a through‐the‐mask alignment sensor for a vertical stage x‐ray aligner
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-11-1994)“…SVG Lithography is building a production‐ready, vertical stage x‐ray proximity aligner. For aligner‐to‐itself overlays, the aligner overlay specification is a…”
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12
Space-charge effects in projection electron-beam lithography: Results from the SCALPEL proof-of-lithography system
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-03-2001)“…In projection electron-beam systems resolution and throughput are linked through electron–electron interactions collectively referred to as space-charge…”
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13
Some one-loop calculations for a g φ 4 field theory
Published in Physical review. D, Particles and fields (01-01-1982)Get full text
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14
On the one-loop correction in Yang-Mills theories with external sources
Published in Physical review. D, Particles and fields (01-01-1982)Get full text
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15
Effect of thin-film imaging on line edge roughness transfer to underlayers during etch processes
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-03-2004)“…For the patterning of sub-100 nm features, a clear understanding of the origin and control of line edge roughness (LER) is extremely desirable, from a…”
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16
SCALPEL aerial image monitoring: Principles and application to space charge
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-09-2000)“…We present an approach to real time direct aerial image monitoring which utilizes the information contained in an alignment signal generated by scanning the…”
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Mechanism of Laser Induced Compaction
Published 15-06-1995“…Fused Silica is the material of choice for UV optical systems such as the projection optics in microlithography systems. Unfortunately fused silica is not…”
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18
Generalized Goldstone Theorem: Automatic Imposition of the Higgs Mechanism and Application to Scale and Conformal Symmetry Breaking
Published 28-08-2000“…J.Math.Phys. 42 (2001) 3282-3291 Standard discussions of Goldstone's theorem based on a symmetry of the action assume constant fields and global…”
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Analytic evaluation of the intensity point spread function
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-11-2000)“…The intensity point spread function (PSF) for geometric imaging such as occurs in a projection electron system like SCALPEL is derived analytically from the…”
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20
Finite element analysis of SCALPEL wafer heating
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-11-1999)“…A high-throughput scattering with angular limitation projection electron beam lithography (SCALPEL) tool will typically deliver up to 1.5×10 −4 J to an area…”
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