Search Results - "Galiy, P.V"

Electronic energy structure of the (100) In4Se3 surfaces at different preparation and treatment in ultraviolet photoelectron spectroscopy study by Tuziak, O.Ya, Makar, T.R., Dzyuba, V.I., Nenchuk, T.M., Galiy, P.V.

“…The (100) surface of In4Se3 layered crystal was obtained in situ, ions sputtered and exposed to UHV for hours. The UPS spectra for these surfaces, atomically…”
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Quantitative analysis of indium deposited layer formation mechanism for In/In 4 Se 3 (100) nanosystem by Galiy, P.V., Nenchuk, T.M., Mazur, P., Ciszewski, A., Yarovets, I.R.

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Quantitative analysis of indium deposited layer formation mechanism for In/In4Se3 (100) nanosystem by Galiy, P.V., Nenchuk, T.M., Mazur, P., Ciszewski, A., Yarovets, I.R.

“…Indium deposited coatings formation on (100) surface of In 4 Se 3 layered semiconductor crystal was studied by scanning tunneling spectroscopy/microscopy…”
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Self-assembled indium nanostructures formation on InSe (0001) surface by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Buzhuk, Ya. M., Tsvetkova, O. V.

“…The surfaces of 2D layered crystals are one among most perspective templates for self-assembling of metal nanostructures due to the dewetting. The initial InSe…”
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Solid state dewetting application for In/ (0001) Sb2Te3 2D layered semiconductor nanosystem formation by Galiy, P.V., Nenchuk, T.M., Ciszewski, A., Mazur, P., Dzyuba, V.I., Makar, T.R., Tsvetkova, O.V.

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The interface microscopy and spectroscopy on the cleavage surfaces of the In 4Se 3 pure and copper-intercalated layered crystals by Galiy, P.V., Musyanovych, A.V., Fiyala, Ya.M.

“…Surface properties of In 4Se 3, In 4Se 3(Cu) crystals were studied. SEM, STM surfaces micro-and nanostructure, and XPS spectra were obtained for interface on…”
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Atomic force microscopy study of the cleavage surfaces of In 4Se 3 layered semiconductor crystal by Galiy, P.V., Nenchuk, T.M., Dveriy, O.R., Ciszewski, A., Mazur, P., Zuber, S.

“…The topography of the (1 0 0) cleavage surfaces of In 4Se 3 layered semiconductor crystal was analyzed by atomic force microscopy (AFM) in ultrahigh vacuum…”
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The interface microscopy and spectroscopy on the cleavage surfaces of the In4Se3 pure and copper-intercalated layered crystals by GALIY, P. V, MUSYANOVYCH, A. V, FIYALA, Ya. M

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Atomic force microscopy study of the cleavage surfaces of In4Se3 layered semiconductor crystal by GALIY, P. V, NENCHUK, T. M, DVERIY, O. R, CISZEWSKI, A, MAZUR, P, ZUBER, S

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Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In 4Se 3 crystals by Galiy, P.V., Musyanovych, A.V., Nenchuk, T.M.

“…The results of the quantitative X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) of the interface carbon layer formation on the…”
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Excitonic ionizations of the electron centres in caesium iodide crystal and exoemission of electrons by Galiy, P.V., Mel’nyk, O.Ya, Tsvetkova, O.V.

“…In the wide-band-gap alkali halide crystals recombination of defects may result in formation of the excitons, which can ionize an electron F-centre; thus the…”
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Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In4Se3 crystals by Galiy, P V, Musyanovych, A V, Nenchuk, T M

“…The results of the quantitative X--ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) of the interface carbon layer formation on the…”
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Study of Self-assembled 2D Ag Nanostructures Intercalated into In4Se3 Layered Semiconductor Crystal by Galiy, P.V., Nenchuk, T.M., Dveriy, O.R., Ciszewski, A., Mazur, P., Poplavskyy, I.O.

“…The furrowed structure of the surface lattice in accord with bulk crystallography data for non intentionally intercalated In 4 Se 3 crystal is also find to be…”
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Auger electron spectroscopy studies of In 4Se 3 layered crystals by Galiy, P.V., Nenchuk, T.M., Stakhira, J.M., Fiyala, Ya.M.

“…In 4Se 3 pure and silver intercalated layered semiconductor crystals’ surfaces have been studied with application of Auger electron spectroscopy (AES). It was…”
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The radiation defect accumulation in scintillative crystals of caesium halides under intense electron beam irradiation by Galiy, P.V.

“…The characteristics of defect accumulation and radiolysis at CsI crystals under mean energies of electron irradiation at wide dose rates and ranges of doses…”
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Surface investigations of nanostructured porous silicon by Galiy, P.V, Lesiv, T.I, Monastyrskii, L.S, Nenchuk, T.M, Olenych, I.B

“…Por-Si surface studies were carried out by Auger electron spectroscopy (AES), thermostimulated exoelectron emission (TSEE), photoluminescence (PL) in visible…”
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Auger electron spectroscopy studies of In4Se3 layered crystals by Galiy, P.V., Nenchuk, T.M., Stakhira, J.M., Fiyala, Ya.M.

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Thermostimulated Exoelectron Emission Studies of Porous Silicon by Galiy, P. V., Nenchuk, T. M., Stakhira, J. M.

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The studies of thin film coatings on the surface of porous silicon by Galiy, P.V., Monastyrskii, L.S., Nenchuk, T.M., Boyko, J.V., Rudyi, I.O.

“…Summary form only given. The complex of surface and subsurface sensitive methods: Auger electron spectroscopy (AES), thermostimulated exoelectron emission…”
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