Search Results - "Galiy, P."

Studies of indium nanostructures growth models on A3B6 layered templates by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R.

“…This article explores the surface architecture formation on layered A 3 B 6 semiconductors, such as In 4 Se 3 , InSe, and InTe, focusing on kinetics of surface…”
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Indium deposited nanosystems formation on 2D layered chalcogenide crystals' surfaces by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R., Tsvetkova, O. V.

“…The studies of In nanosystem formation on (100) surface of In 4 Se 3 were conducted applying analysis of STM data from 1 × 1µm 2 areas considering the…”
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Solid state dewetting application for in/(0001) Sb2Te3 nanosystem formation by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R., Tsvetkova, O. V.

“…Sb 2 Te 3 layered chalcogenide crystal's (0001) surface was applied for self-organizing of deposited indium nanostructures' arrays while solid state dewetting…”
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InTe surface application as template for indium deposited nanosystem formation by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R.

“…Formation of indium deposited coverage on (001) surface of InTe layered semiconductor crystal due to solid state dewetting process was studied by STM/STS in…”
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Solid state dewetting application for In/ (0001) Sb2Te3 2D layered semiconductor nanosystem formation by Galiy, P.V., Nenchuk, T.M., Ciszewski, A., Mazur, P., Dzyuba, V.I., Makar, T.R., Tsvetkova, O.V.

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The electronic structure of surface chains in the layered semiconductor In4Se3(100) by Losovyj, Ya. B., Klinke, Melanie, Cai, En, Rodriguez, Idaykis, Zhang, Jiandi, Makinistian, L., Petukhov, A. G., Albanesi, E. A., Galiy, P., Fiyala, Ya, Liu, Jing, Dowben, P. A.

“…The ordered (100) surface of layered In4Se3 single crystals is characterized by semiconducting quasi-one-dimensional indium (In) chains. A band with…”
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Order–disorder transition for corrugated Au layers by Fukutani, Keisuke, Lozova, N., Zuber, S.M., Dowben, P.A., Galiy, P., Losovyj, Yaroslav B.

“…Atomic-scale structure of the growth of a gold film on (1 1 2) plane of Mo single crystal was investigated by means of low energy electron diffraction (LEED)…”
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Quantitative analysis of indium deposited layer formation mechanism for In/In4Se3 (100) nanosystem by Galiy, P.V., Nenchuk, T.M., Mazur, P., Ciszewski, A., Yarovets, I.R.

“…Indium deposited coatings formation on (100) surface of In 4 Se 3 layered semiconductor crystal was studied by scanning tunneling spectroscopy/microscopy…”
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The bulk band structure and inner potential of layered In4Se3 by JING LIU, LOSOVYJ, Ya. B, KOMESU, Takashi, DOWBEN, P. A, MAKINISTIAN, L, ALBANESI, E. A, PETUKHOV, A. G, GALIY, P, FIYALA, Ya

“…The layered In4Se3 system does have a bulk band structure (i.e. discernable and significant band dispersion) perpendicular to the cleavage plane. Band widths…”
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The interface microscopy and spectroscopy on the cleavage surfaces of the In4Se3 pure and copper-intercalated layered crystals by GALIY, P. V, MUSYANOVYCH, A. V, FIYALA, Ya. M

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Atomic force microscopy study of the cleavage surfaces of In4Se3 layered semiconductor crystal by GALIY, P. V, NENCHUK, T. M, DVERIY, O. R, CISZEWSKI, A, MAZUR, P, ZUBER, S

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Studies of indium nanostructures growth models on A 3 B 6 layered templates by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R.

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The radiation defect accumulation in scintillative crystals of caesium halides under intense electron beam irradiation by Galiy, P.V.

“…The characteristics of defect accumulation and radiolysis at CsI crystals under mean energies of electron irradiation at wide dose rates and ranges of doses…”
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Electronic relaxations of radiative defects of the anion sublattice in caesium bromide crystals and exoemission of electrons by Galiy, P., Mel'nyk, O.

“…The thermostimulated exoelectron emission (TSEE) is applied for investigation of the processes of radiative defects recombination in the nearsurface layer…”
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Solid state dewetting application for in/(0001) Sb 2 Te 3 nanosystem formation by Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R., Tsvetkova, O. V.

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Excitonic ionizations of the electron centres in caesium iodide crystal and exoemission of electrons by Galiy, P.V., Mel’nyk, O.Ya, Tsvetkova, O.V.

“…In the wide-band-gap alkali halide crystals recombination of defects may result in formation of the excitons, which can ionize an electron F-centre; thus the…”
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Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In4Se3 crystals by Galiy, P V, Musyanovych, A V, Nenchuk, T M

“…The results of the quantitative X--ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) of the interface carbon layer formation on the…”
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Electronic energy structure of the (100) In4Se3 surfaces at different preparation and treatment in ultraviolet photoelectron spectroscopy study by Tuziak, O.Ya, Makar, T.R., Dzyuba, V.I., Nenchuk, T.M., Galiy, P.V.

“…The (100) surface of In4Se3 layered crystal was obtained in situ, ions sputtered and exposed to UHV for hours. The UPS spectra for these surfaces, atomically…”
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Thermostimulated Exoelectron Emission Studies of Porous Silicon by Galiy, P. V., Nenchuk, T. M., Stakhira, J. M.

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Structural Aspect of Formation of a Nanosystem of In/In$_{4}$Se$_{3}$ (100) by Galiy, P. V., Mazur, P., Ciszewski, A., Nenchuk, T. M., Yarovets’, I. R., Dveriy, O. R.

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