Search Results - "Galewski, C.J."

Growth and properties of W–Si–N diffusion barriers deposited by chemical vapor deposition by Fleming, J.G, Roherty-Osmun, E, Smith, Paul Martin, Custer, Jonathan S, Kim, Y.-D, Kacsich, T, Nicolet, M.-A, Galewski, C.J

“…Films of W–Si–N were deposited by chemical vapor deposition, characterized, and compared to W–Si–N films deposited by physical vapor deposition, or sputtering…”
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Effects of annealing on X-ray-amorphous CVD W-Si-N barrier layer materials by Gokce, O.H., Amin, S., Ravindra, N.M., Szostak, D.J., Paff, R.J., Fleming, J.G., Galewski, C.J., Shallenberger, J., Eby, R.

“…The influence of furnace and rapid thermal annealing (RTA) on X-ray-amorphous, chemically vapor deposited (CVD) W-Si-N barrier layers on SiO 2/Si structures…”
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W/WN x as a low-resistance gate material and local interconnect by Galewski, C.J., Sans, C.A., Gadgil, P.N., Matthysse, L.D., Zetterquist, N.

“…In this study we continue the proposal to use an in-situ deposition of an interfacial WN x film as a process that enables the use of W as a low-resistance gate…”
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W/WNx as a low-resistance gate material and local interconnect by Galewski, C.J., Sans, C.A., Gadgil, P.N., Matthysse, L.D., Zetterquist, N.

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Silicon wafer preparation for low-temperature selective epitaxial growth by Galewski, C.J., Lou, J.-C., Oldham, W.G.

“…Many potential selective silicon epitaxy applications demand low-temperature processing. However, the hydrogen baking that is commonly used to remove the…”
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WNx/W as a low-resistance gate material and local interconnect by Galewski, C.J., Gadgil, P.N., Matthysse, L.D., Sans, C.A.

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WNx/W as a low-resistance gate material and local interconnect by Galewski, C.J., Gadgil, P.N., Matthysse, L.D., Sans, C.A.

“…We propose the use of an in-situ deposition of an interfacial WN/sub x/ film to enable the use of W as a low resistance gate and local interconnect layer. We…”
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