Search Results - "Gaire, Churamani"
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Tunable Bandgap in Graphene by the Controlled Adsorption of Water Molecules
Published in Small (Weinheim an der Bergstrasse, Germany) (22-11-2010)“…Lack of a bandgap limits the utilization of graphene in nanoelectronic and nanophotonic devices. It is shown that a tunable bandgap of up to ≈0.2 eV can be…”
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Journal Article -
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A Novel Approach to Control Source/Drain Cavity Profile for Device Performance Improvement
Published in IEEE transactions on electron devices (01-09-2018)“…We present a novel method to form the source/ drain (S/D) cavity for pFET performance improvement-we named this cavity as doping-assisted cavity as its profile…”
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Journal Article -
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Epitaxial SiGe seed layer thickness for PFET performance tuning
Published in 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) (01-08-2020)“…SiGe alloys have been widely used as stressors in source/drain (S/D) regions for advanced complementary metal-oxide-semiconductor (CMOS) technologies to…”
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Conference Proceeding -
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Advanced Process Control (APC) for Selective EPI process in 300mm Fab
Published in 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) (01-08-2020)“…An advanced in-line process controller, which combines 4 new features with the traditional statistical process control (SPC) feedback control, has been…”
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Conference Proceeding -
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Deformation behavior of amorphous silicon nanostructures under monotonic and cyclic loading
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Dissertation -
6
Effect of Si precursors on micro-loading, morphology and throughput of selective epitaxial growth of si and Si sub(1-x)Ge sub(x)
Published in IEEE Conference on Industrial Electronics and Applications (Online) (01-03-2015)“…In this paper, we report the effect of two Si precursors, SiH sub(4) and SiCl sub(2)H sub(2) on the micro-loading, morphology and throughput for selective…”
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Journal Article -
7
Deformation behavior of amorphous silicon nanostructures under monotonic and cyclic loading
Published 01-01-2008“…An atomic force microscope was used to characterize the deformation behavior of amorphous silicon nanostructures subjected to monotonic and cyclic loading. The…”
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Dissertation -
8
Effect of Si precursors on micro-loading, morphology and throughput of selective epitaxial growth of si and Si1−xGex
Published in 2015 China Semiconductor Technology International Conference (01-03-2015)“…In this paper, we report the effect of two Si precursors, SiH 4 and SiCl 2 H 2 on the micro-loading, morphology and throughput for selective epitaxial growth…”
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Conference Proceeding