Search Results - "Gaire, Churamani"

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  1. 1

    Tunable Bandgap in Graphene by the Controlled Adsorption of Water Molecules by Yavari, Fazel, Kritzinger, Christo, Gaire, Churamani, Song, Li, Gulapalli, Hemtej, Borca-Tasciuc, Theodorian, Ajayan, Pulickel M., Koratkar, Nikhil

    “…Lack of a bandgap limits the utilization of graphene in nanoelectronic and nanophotonic devices. It is shown that a tunable bandgap of up to ≈0.2 eV can be…”
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    Journal Article
  2. 2

    A Novel Approach to Control Source/Drain Cavity Profile for Device Performance Improvement by Lo, Hsien-Ching, Peng, Jianwei, Reis, Edward, Zhu, Baofu, Ma, Wei, Mun, Seong Yeol, Shintri, Shashidhar, Bazizi, El Mehdi, Gaire, Churamani, Qi, Yi, Chen, James, Ting, Seng Nguon, Hu, Owen, Samavedam, Srikanth

    Published in IEEE transactions on electron devices (01-09-2018)
    “…We present a novel method to form the source/ drain (S/D) cavity for pFET performance improvement-we named this cavity as doping-assisted cavity as its profile…”
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    Journal Article
  3. 3

    Epitaxial SiGe seed layer thickness for PFET performance tuning by Shao, Dali, Briggs, Kyle, Kenney, Crystal, Chadwick, Aaron, Gaire, Churamani, Holt, Judson, Peng, Hongying, Hovhannisyan, Anahit, Chen, James, Tong, Weihua

    “…SiGe alloys have been widely used as stressors in source/drain (S/D) regions for advanced complementary metal-oxide-semiconductor (CMOS) technologies to…”
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    Conference Proceeding
  4. 4

    Advanced Process Control (APC) for Selective EPI process in 300mm Fab by Peng, Hongying, Caruso, Jonathan, Manian, Dinesh Balasubra, Chakravorty, Shiladitya, Mickelson, Ryan, Tay, Jensen, Cabral, Stephen, Lu, Lixin, Gaire, Churamani, Holt, Judson, Braithwaite, Glyn, Shao, Dali, Tong, Wei Hua

    “…An advanced in-line process controller, which combines 4 new features with the traditional statistical process control (SPC) feedback control, has been…”
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    Conference Proceeding
  5. 5

    Deformation behavior of amorphous silicon nanostructures under monotonic and cyclic loading by Gaire, Churamani

    “…An atomic force microscope was used to characterize the deformation behavior of amorphous silicon nanostructures subjected to monotonic and cyclic loading. The…”
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    Dissertation
  6. 6

    Effect of Si precursors on micro-loading, morphology and throughput of selective epitaxial growth of si and Si sub(1-x)Ge sub(x) by Gaire, Churamani, Krishnan, Bharat, Liu, Jinping

    “…In this paper, we report the effect of two Si precursors, SiH sub(4) and SiCl sub(2)H sub(2) on the micro-loading, morphology and throughput for selective…”
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    Journal Article
  7. 7

    Deformation behavior of amorphous silicon nanostructures under monotonic and cyclic loading by Gaire, Churamani

    Published 01-01-2008
    “…An atomic force microscope was used to characterize the deformation behavior of amorphous silicon nanostructures subjected to monotonic and cyclic loading. The…”
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    Dissertation
  8. 8

    Effect of Si precursors on micro-loading, morphology and throughput of selective epitaxial growth of si and Si1−xGex by Gaire, Churamani, Krishnan, Bharat, Jinping Liu

    “…In this paper, we report the effect of two Si precursors, SiH 4 and SiCl 2 H 2 on the micro-loading, morphology and throughput for selective epitaxial growth…”
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    Conference Proceeding