Search Results - "Gainer, G.H"

MOCVD growth, stimulated emission and time-resolved PL studies of InGaN/(In)GaN MQWs: well and barrier thickness dependence by Shee, Sang Kee, Kwon, Y.H, Lam, J.B, Gainer, G.H, Park, G.H, Hwang, S.J, Little, B.D, Song, J.J

“…Optically pumped stimulated emission (SE) and time-resolved photoluminescence (TRPL) of InGaN/(In)GaN multiple quantum wells (MQWs) grown by low-pressure…”
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Effects of Carrier Localization on the Optical Characteristics of MOCVD-Grown InGaN/GaN Heterostructures by Cho, Yong-Hoon, Schmidt, T.J., Fischer, A.J., Bidnyk, S., Gainer, G.H., Song, J.J., Keller, S., Mishra, U.K., DenBaars, S.P., Kim, D.S., Jhe, W.

“…We have studied both the spontaneous and stimulated emission (SE) properties as a function of excitation photon energy for InGaN/GaN multiple quantum wells…”
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A Comparison of the Optical Characteristics of AlGaN, GaN, and InGaN Thin Films by Cho, Yong-Hoon, Schmidt, T.J., Gainer, G.H., Lam, J.B., Song, J.J., Keller, S., Mishra, U.K., DenBaars, S.P., Yang, W., Kim, D.S., Jhe, W.

“…We have investigated the optical properties of InGaN, GaN, and AlGaN epilayers using photoluminescence (PL), PL excitation, time‐resolved PL, and optically…”
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Temperature Dependence of Transmission and Emission Spectra in MOCVD-Grown AlGaN Ternary Alloys by Cho, Yong-Hoon, Gainer, G.H., Lam, J.B., Song, J.J., Yang, W.

“…Optical absorption, emission, and carrier recombination characteristics of AlxGa1—xN epilayers (x = 0.17, 0.26, and 0.33) were systematically studied by means…”
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The Excitonic Optical Stark Effect in GaN by Choi, C. K., Chang, Yia-Chung, Lam, J.B., Gainer, G.H., Shee, S. K., Krasinski, J. S., Song, J.J.

“…The dynamic Stark effect of excitons in GaN at 10 K with excitation well below the excitonic resonances was studied using nondegenerate femtosecond pump–probe…”
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Optical Properties and Lasing in (In, Al)GaN Structures by Bidnyk, S., Gainer, G.H., Shee, S.K., Lam, J.B., Little, B.D., Sugahara, T., Krasinski, J., Kwon, Y.H., Park, G.H., Hwang, S.J., Song, J.J., Bulman, G.E., Kong, H.S.

“…We achieved low‐threshold ultra‐violet lasing in optically pumped GaN/AlGaN separate confinement heterostructures over a wide temperature range. Lasing modes…”
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Study of gain mechanisms in Al/sub x/Ga/sub 1-x/N in the temperature range of 30 to 300 K by Lam, J.B., Bidnyk, S., Gainer, G.H., Little, B.D., Song, J.J., Yang, W.

“…Summary form only given. Due to its optical emission wavelength in the near to deep UV, Al/sub x/Ga/sub 1-x/N deserves much attention for its potential UV…”
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Nonlinear optical spectroscopy of highly excited InGaN-GaN multiple quantum well blue laser structures by Schmidt, T.J., Bidayk, S., Cho, Y.H., Gainer, G.H., Song, J.-J.

“…Summary form only given. The nonlinear optical properties of highly excited InGaN/GaN multiple quantum well (MQW) blue laser structures have been studied using…”
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GaN/AlGaN SCH UV semiconductor lasers: Effect of GaN well thickness on lasing efficiency by Gainer, G.H., Kwon, Y.H., Lam, J.B., Kalashyan, A., Song, J.J., Choi, S.C., Yang, G.M.

“…Summary form only given. GaN active medium structures are attracting much attention for the development of UV laser diodes (LDs) with emission wavelengths…”
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Comparison of spontaneous and stimulated emission from UV-blue photonic materials by Little, B.D., Yong-Hoon Cho, Schmidt, T.J., Gainer, G.H., Lam, J.B., Song, J.J., Yang, W., Keller, S., Mishra, U.K., DenBaars, S.P., Jhe, W.

“…We have systematically studied both the spontaneous and stimulated emission (SE) behavior in GaN, InGaN, and AlGaN thin films by means of photoluminescence…”
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Critical issues of localization in the development of InGaN/GaN laser diodes by Bidnyk, S., Yong-Hoon Cho, Schmidt, C.T.J., Gainer, A.G.H., Song, A.J.J., Keller, S., Mishra, U.K., DenBaars, S.P., Jhe, W.

“…We have systematically studied both the spontaneous and stimulated emission (SE) properties of InGaN-based lasing mediums using a variety of linear and…”
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