Search Results - "Gaier, T."

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  1. 1

    A 340-380 GHz Integrated CB-CPW-to-Waveguide Transition for Sub Millimeter-Wave MMIC Packaging by Leong, K., Deal, W.R., Radisic, V., Xiao Bing Mei, Uyeda, J., Samoska, L., Fung, A., Gaier, T., Lai, R.

    “…In this letter, a rectangular waveguide to conductor backed-coplanar waveguide electromagnetic transition suitable of operating at sub-millimeter wave…”
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    Journal Article
  2. 2

    New Measurements of Fine-Scale CMB Polarization Power Spectra from CAPMAP at Both 40 and 90 GHz by Bischoff, C, Hyatt, L, McMahon, J. J, Nixon, G. W, Samtleben, D, Smith, K. M, Vanderlinde, K, Barkats, D, Farese, P, Gaier, T, Gundersen, J. O, Hedman, M. M, Staggs, S. T, Winstein, B

    Published in The Astrophysical journal (10-09-2008)
    “…We present new measurements of the CMB polarization from the final season of CAPMAP. The data set was obtained in winter 2004-2005 with the 7 m antenna in…”
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    Journal Article
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    A Submillimeter-Wave HEMT Amplifier Module With Integrated Waveguide Transitions Operating Above 300 GHz by Samoska, L., Deal, W.R., Chattopadhyay, G., Pukala, D., Fung, A., Gaier, T., Soria, M., Radisic, V., Mei, X., Lai, R.

    “…In this paper, we report on the first demonstration of monolithically integrated waveguide transitions in a submillimeter-wave monolithic integrated circuit…”
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    Demonstration of a 311-GHz Fundamental Oscillator Using InP HBT Technology by Radisic, V., Sawdai, D., Scott, D., Deal, W.R., Linh Dang, Li, D., Chen, J., Fung, A., Samoska, L., Gaier, T., Lai, R.

    “…In this paper, a sub-millimeter-wave HBT oscillator is reported. The oscillator uses a single-emitter 0.3 m15 m InP HBT device with maximum frequency of…”
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    Journal Article
  8. 8

    Demonstration of Sub-Millimeter Wave Fundamental Oscillators Using 35-nm InP HEMT Technology by Radisic, V., Mei, X.B., Deal, W.R., Yoshida, W., Liu, P.H., Uyeda, J., Barsky, M., Samoska, L., Fung, A., Gaier, T., Lai, R.

    “…In this letter, 254-, 314-, and 346-GHz fundamental oscillators are demonstrated. These are the highest frequency oscillators using three-terminal devices…”
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  9. 9

    Demonstration of a 270-GHz MMIC Amplifier Using 35-nm InP HEMT Technology by Deal, W.R., Mei, X.B., Radisic, V., Yoshida, W., Liu, P.H., Uyeda, J., Barsky, M., Gaier, T., Fung, A., Samoska, L., Lai, R.

    “…In this letter, the first 270-GHz millimeter-wave integrated circuit (MMIC) amplifier is demonstrated. Peak measured gain of 11.6-dB is measured for the three…”
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  10. 10

    Submillimeter-Wave InP MMIC Amplifiers From 300-345 GHz by Pukala, D., Samoska, L., Gaier, T., Fung, A., Mei, X.B., Yoshida, W., Lee, J., Uyeda, J., Liu, P.H., Deal, W.R., Radisic, V., Lai, R.

    “…In this letter, we describe the design, fabrication, simulation, and measured performance of a single-stage and three-stage 320 GHz amplifier using Northrop…”
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    Journal Article
  11. 11

    Two-Port Vector Network Analyzer Measurements in the 218-344- and 356-500-GHz Frequency Bands by Fung, A., Dawson, D., Samoska, L., Lee, K., Gaier, T., Kangaslahti, P., Oleson, C., Denning, A., Lau, Y., Boll, G.

    “…We discuss methods for full two-port vector network analyzer measurements in the 218-344- (using WR3) and 356-500-GHz (using WR2.2) frequency bands. Waveguide…”
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    Journal Article Conference Proceeding
  12. 12

    35-nm InP HEMT SMMIC Amplifier With 4.4-dB Gain at 308 GHz by Mei, X.B., Yoshida, W., Deal, W.R., Liu, P.H., Lee, J., Uyeda, J., Dang, L., Wang, J., Liu, W., Li, D., Barsky, M., Kim, Y.M., Lange, M., Chin, T.P., Radisic, V., Gaier, T., Fung, A., Samoska, L., Lai, R.

    Published in IEEE electron device letters (01-06-2007)
    “…rdquoWe report the first submillimeter-wave monolithic microwave integrated circuit (MMIC) amplifier with 4.4-dB measured gain at 308-GHz frequency, making it…”
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    Journal Article
  13. 13

    Measurement of a 270 GHz Low Noise Amplifier With 7.5 dB Noise Figure by Gaier, T., Samoska, L., Fung, A., Deal, W.R., Radisic, V., Mei, X.B., Yoshida, W., Liu, P.H., Uyeda, J., Barsky, M., Lai, R.

    “…We describe the measurement of the noise of a 270-GHz low noise amplifier using wafer-probe techniques. The measurement includes deembedding to the coplanar…”
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    Demonstration of 184 and 255-GHz Amplifiers Using InP HBT Technology by Radisic, V., Sawdai, D., Scott, D., Deal, W.R., Linh Dang, Li, D., Cavus, A., Fung, A., Samoska, L., To, R., Gaier, T., Lai, R.

    “…In this letter, 184 and 255 GHz single-stage heterojunction bipolar transistor (HBT) amplifiers are reported. Each amplifier uses a single-emitter 0.4 ¿m 15 ¿m…”
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    Journal Article
  16. 16

    First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies by Fung, A.K., Gaier, T., Samoska, L., Deal, W.R., Radisic, V., Mei, X.B., Yoshida, W., Liu, P.S., Uyeda, J., Barsky, M., Lai, R.

    “…We present on-wafer power measurements of 35 nm gate length InP HEMT amplifiers at 330 GHz. Various amplifiers are examined. The maximum output power of 1.78…”
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    Journal Article
  17. 17

    Development of Sub-Millimeter-Wave Power Amplifiers by Deal, W.R., Mei, X.B., Radisic, V., Lange, M.D., Yoshida, W., Liu Po-hsin, Uyeda, J., Barsky, M.E., Fung, A., Gaier, T., Lai, R.

    “…In this paper, we present the framework for developing the first working power amplifiers at sub-millimeter-wave frequencies. The technology is made possible…”
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    Journal Article Conference Proceeding
  18. 18

    A New Sub-Millimeter Wave Power Amplifier Topology Using Large Transistors by Deal, W.R., Mei, X.B., Radisic, V., Bayuk, B., Fung, A., Yoshida, W., Liu, P.H., Uyeda, J., Samoska, L., Gaier, T., Lai, R.

    “…In this letter, a new power amplifier topology is demonstrated which allows the use of large (120 mum/transistors) at extremely high frequency. This is…”
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    Journal Article
  19. 19

    Power-amplifier modules covering 70-113 GHz using MMICs by Wang, Huei, Samoska, L., Gaier, T., Peralta, A., Hsin-Hsing Liao, Leong, Y.C., Weinreb, S., Chen, Y.C., Nishimoto, M., Lai, R.

    “…A set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the…”
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  20. 20

    Two-Port Vector Network Analyzer Measurements Up to 508 GHz by Fung, A., Samoska, L., Chattopadhyay, G., Gaier, T., Kangaslahti, P., Pukala, D., Oleson, C., Denning, A., Yuenie Lau

    “…We present new results for a two-port vector network analyzer swept-frequency test set for the 325-508 GHz frequency band. The calibrated dynamic range…”
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    Journal Article