Search Results - "Gaiduk, P. I."

Plasmonic-Enhanced Light Absorption in Periodic Silicon Structures: The Effect of Inter-Island Distance by Mukhammad, A. I., Chizh, K. V., Plotnichenko, V. G., Yuryev, V. A., Gaiduk, P. I.

“…Absorption spectra of Si/SiO 2 /Si structure with highly doped silicon layers are simulated with Finite Difference Time Domain (FDTD) as a function of…”
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Carbon redistribution and precipitation in high temperature ion-implanted strained Si/SiGe/Si multi-layered structures by Gaiduk, P.I., Lundsgaard Hansen, J., Larsen, A. Nylandsted, Korolik, O.V., Bregolin, F.L., Skorupa, W.

“…Carbon depth profiles after high temperature implantation in strained Si/SiGe/Si multilayered system and induced structural defects. •Anomalous carbon…”
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IR-Absorption in Ti/(Si)/SiO2/Si3N4/n+-Si Structures with an Island Surface Layer of Various Horizontal Geometries by Mukhammad, A. I., Gaiduk, P. I.

“…Theoretically calculated IR absorption spectra of Ti/SiO 2 /Si 3 N4/ n + -Si structures with an island surface layer were used to show that the absorption…”
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Photoelectric Characteristics of SiC/Si Heterostructures by Lobanok, M. V., Polonskii, N. V., Gaiduk, P. I.

“…Epitaxial layers of SiC 80 nm thick were grown on a silicon substrate by molecular beam epitaxy at 950°C. The Raman spectra contain a peak at 793 cm –1 , which…”
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IR Transmittance of Si/SiO2/Si3N4/Si Insular Structures Formed by Selective Laser Annealing by Mukhammad, A. I., Gaiduk, P. I., Nalivaiko, O. Yu, Kolos, V. V.

“…Periodic Si/SiO 2 /Si 3 N 4 /Si structures with an insular surface layer were formed by selective laser annealing. A study by Fourier infrared spectrometry in…”
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Structural and Optical Properties of SiC/Si Heterostructures Obtained Using Rapid Vacuum-Thermal Carbidization of Silicon by Lobanok, M. V., Mukhammad, A. I., Gaiduk, P. I.

“…A transmission electron microscopy (TEM) investigation revealed that rapid vacuum-thermal carbidization of silicon at 1100°C leads to formation of cubic…”
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Band-gap and sub-band-gap photoelectrochemical processes at nanocrystalline CdS grown on ZnO by successive ionic layer adsorption and reaction method by Malashchonak, M.V., Streltsov, Е.А., Mazanik, A.V., Kulak, A.I., Poznyak, S.K., Stroyuk, O.L., Kuchmiy, S.Ya, Gaiduk, P.I.

“…Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO…”
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Formation of SiC by Vacuum Carbidization on Porous Silicon by Labanok, M. V., Prakopyeu, S. L., Zavatski, S. A., Bondarenko, V. P., Gaiduk, P. I.

“…Planar-view TEM investigation revealed the formation of cubic silicon carbide layers on porous silicon by vacuum carbidization. The formation of cubic silicon…”
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Structure and morphology of CrSi2 layers formed by rapid thermal treatment by Solovjov, J. A., Pillipenko, V. A., Gaiduk, P. I.

“…The formation of chromium disilicide layers on n-type single crystal silicon substrates (111) during rapid thermal annealing in heat balance mode by the…”
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Suppression of tin precipitation in SiSn alloy layers by implanted carbon by Gaiduk, P. I., Lundsgaard Hansen, J., Nylandsted Larsen, A., Bregolin, F. L., Skorupa, W.

“…By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin…”
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Special features of synthesis of silver hydrosols in the presence of the Na2EDTA by Shevchenko, G.P., Zhuravkov, V.A., Tretyak, E.V., Shautsova, V.I., Gaiduk, P.I.

“…The process of formation of silver nanoparticles in solution of Trilon B without reducing agents and polymer stabilizers has been investigated. The significant…”
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Plasmonic-based SnO2 gas sensor with in-void segregated silver nanoparticles by Gaiduk, P.I., Chevallier, J., Prokopyev, S.L., Nylandsted Larsen, A.

“…Transmission spectra of Sn0.35Ag0.65 alloy layers on a fused silica after magnetron deposition followed by thermal treatment at different conditions. [Display…”
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Strain-relaxed SiGe/Si heteroepitaxial structures of low threading-dislocation density by Gaiduk, P I, Larsen, A Nylandsted, Hansen, J Lundsgaard

“…A new method of stepwise equilibrium for molecular beam epitaxy (MBE) growth of relaxed, low dislocation-density Si sub(1-x)Ge sub(x) alloy layers on a…”
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Ion-induced phase transformations in nanostructural TiZrAlN films by Uglov, V.V., Zlotski, S.V., Saladukhin, I.A., Rovbut, A.Y., Gaiduk, P.I., Abadias, G., Tolmachova, G.N., Dub, S.N.

“…(Ti,Zr)1−xAlxNy thin films (300nm) with Ti:Zr ratio of ~1:1 and Al content in metal sublattice up to x=0.312 were deposited at Ts=270°C using reactive…”
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Ion-beam-assisted MBE growth of semi-spherical SiGe/Si nano-structures by GAIDUK, P. I, HANSEN, J. Lundsgaard, LARSEN, A. Nylandsted

“…Semi-spherical SiGe/Si nano-structures of a new type are presented. Epitaxial islands of 30--40 nm in base diameter and 11 nm in height and having a density of…”
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Ionisation stimulated defect annealing in GaAs and InP by Wesch, W., Kamarou, A., Wendler, E., Gärtner, K., Gaiduk, P.I., Klaumünzer, S.

“…GaAs and InP samples were pre-damaged by 600 keV Ge ions at 77 K to obtain different damage levels and then post-irradiated at room temperature with different…”
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Temperature effect on defect evolution in 800 keV Ge-implanted Si/SiGe multi-layered structure by Gaiduk, P.I., Larsen, A.Nylandsted, Hansen, J.Lundsgaard, Wendler, E., Wesch, W.

“…We report on the effect of implantation temperature on defect evolution in Si/SiGe layered structure. Ge ion implantation was carried out at 800keV at liquid…”
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Structural and sensing properties of nanocrystalline SnO2 films deposited by spray pyrolysis from a SnCl2 precursor by Gaiduk, P.I., Kozjevko, A.N., Prokopjev, S.L., Tsamis, C., Nylandsted Larsen, A.

“…We report the fabrication and characterization of tin dioxide gas sensing layers. The tin dioxide layers were synthesized using a convenient, simple and…”
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Morphological properties of laser irradiated Si/Ge multilayers by Gaiduk, P.I., Prakopyeu, S.L., Lundsgaard Hansen, J., Nylandsted Larsen, A.

“…Si/Ge multilayers with a total thickness of 65nm were grown by molecular beam epitaxy (MBE) and treated with pulsed Nd:YAG laser (1.06μm) irradiation. Using…”
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Laser-induced melting and recrystallization of CVD grown polycrystalline Si/SiGe/Ge layers by Gaiduk, P.I., Prakopyeu, S.L., Zajkov, V.A., Ivlev, G.D., Gatskevich, E.I.

“…SiGe/Ge layers were deposited by CVD on either Si or Si/SiO2 substrates and were subjected with pulsed laser annealing (LA). In situ measurements of…”
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