Search Results - "Gahoi, Amit"

Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons by Passi, Vikram, Gahoi, Amit, Senkovskiy, Boris V, Haberer, Danny, Fischer, Felix R, Grüneis, Alexander, Lemme, Max C

“…We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The…”
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Ultralow Specific Contact Resistivity in Metal–Graphene Junctions via Contact Engineering by Passi, Vikram, Gahoi, Amit, Marin, Enrique G., Cusati, Teresa, Fortunelli, Alessandro, Iannaccone, Giuseppe, Fiori, Gianluca, Lemme, Max C.

“…A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well‐defined edge…”
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Electrical properties of graphene-metal contacts by Cusati, Teresa, Fiori, Gianluca, Gahoi, Amit, Passi, Vikram, Lemme, Max C., Fortunelli, Alessandro, Iannaccone, Giuseppe

“…The performance of devices and systems based on two-dimensional material systems depends critically on the quality of the contacts between 2D material and…”
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Accurate Graphene-Metal Junction Characterization by Konig, Matthias, Ruhl, Gunther, Gahoi, Amit, Wittmann, Sebastian, Preis, Tobias, Batke, Joerg-Martin, Costina, Ioan, Lemme, Max C.

“…A reliable method is proposed for measuring specific contact resistivity (p C ) for graphenemetal contacts, which is based on a contact end resistance…”
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Contact resistance study of various metal electrodes with CVD graphene by Gahoi, Amit, Wagner, Stefan, Bablich, Andreas, Kataria, Satender, Passi, Vikram, Lemme, Max C.

“…In this study, the contact resistance of various metals to chemical vapor deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM)…”
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On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance by Venica, Stefano, Driussi, Francesco, Gahoi, Amit, Palestri, Pierpaolo, Lemme, Max C., Selmi, Luca

“…The contact-end-resistance (CER) method is applied to transfer length method structures to characterize in-depth the graphene-metal contact and its dependence…”
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Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene by Lupina, Grzegorz, Kitzmann, Julia, Costina, Ioan, Lukosius, Mindaugas, Wenger, Christian, Wolff, Andre, Vaziri, Sam, Östling, Mikael, Pasternak, Iwona, Krajewska, Aleksandra, Strupinski, Wlodek, Kataria, Satender, Gahoi, Amit, Lemme, Max C, Ruhl, Guenther, Zoth, Guenther, Luxenhofer, Oliver, Mehr, Wolfgang

“…Integration of graphene with Si microelectronics is very appealing by offering a potentially broad range of new functionalities. New materials to be integrated…”
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High Voltage Gain Inverters From Artificially Stacked Bilayer CVD Graphene FETs by Pandey, Himadri, Kataria, Satender, Gahoi, Amit, Lemme, Max C.

“…In this letter, we report on inverters made from graphene field effect transistors with channels of artificially stacked bilayer graphene (ASBLG). The…”
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Dependability Assessment of Transfer Length Method to Extract the Metal-Graphene Contact Resistance by Driussi, Francesco, Venica, Stefano, Gahoi, Amit, Kataria, Satender, Lemme, Max C., Palestri, Pierpaolo

“…The measurement of the contact resistance (<inline-formula> <tex-math notation="LaTeX">R_{C} </tex-math></inline-formula>) in semiconductor devices relies on…”
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Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions by Gahoi, Amit, Kataria, Satender, Driussi, Francesco, Venica, Stefano, Pandey, Himadri, Esseni, David, Selmi, Luca, Lemme, Max C.

“…The accurate extraction and the reliable, repeatable reduction of graphene–metal contact resistance (RC) are still open issues in graphene technology. Here,…”
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PECVD Al2O3/a-Si:B as a dopant source and surface passivation by Seiffe, Johannes, Gahoi, Amit, Hofmann, Marc, Rentsch, Jochen, Preu, Ralf

“…In this study, a two‐layer system consisting of a thin aluminum oxide (Al2O3) and a heavily boron‐doped amorphous silicon (a‐Si:B) is described. The double…”
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Dielectric Surface Charge Engineering for Electrostatic Doping of Graphene by Wittmann, Sebastian, Aumer, Fabian, Wittmann, Doris, Pindl, Stephan, Wagner, Stefan, Gahoi, Amit, Reato, Eros, Belete, Melkamu, Kataria, Satender, Lemme, Max C

“…Controlling the doping level in graphene during integration into silicon CMOS compatible devices is an open challenge. In general, the doping level in graphene…”
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PECVD Al sub(2) O sub(3)/a- S i: B as a dopant source and surface passivation by Seiffe, Johannes, Gahoi, Amit, Hofmann, Marc, Rentsch, Jochen, Preu, Ralf

“…In this study, a two-layer system consisting of a thin aluminum oxide (Al sub(2)O sub(3)) and a heavily boron-doped amorphous silicon (a-Si:B) is described…”
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PECVD Al 2 O 3 /a-Si:B as a dopant source and surface passivation: PECVD Al 2 O 3 /a-Si:B as dopant source and surface passivation by Seiffe, Johannes, Gahoi, Amit, Hofmann, Marc, Rentsch, Jochen, Preu, Ralf

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Reliability analysis of the metal-graphene contact resistance extracted by the transfer length method by Venica, Stefano, Driussi, Francesco, Gahoi, Amit, Kataria, Satender, Palestri, Pierpaolo, Lenirne, Max C., Scimi, Luca

“…The transfer Length Method is a well-estab experimental technique to characterize the contact resista semiconductor devices. However, its dependability is ques…”
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Detailed characterization and critical discussion of series resistance in graphene-metal contacts by Venica, Stefano, Driussi, Francesco, Gahoi, Amit, Passi, Vikram, Palestri, Pierpaolo, Lemme, Max C., Selmi, Luca

“…We apply the contact-end resistance method to TLM structures in order to characterize the graphene-metal contact resistance. A critical analysis of the…”
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Contact Resistance Study of Various Metal Electrodes with CVD Graphene by Gahoi, Amit, Wagner, Stefan, Bablich, Andreas, Kataria, Satender, Passi, Vikram, Lemme, Max C

“…Solid-State Electronics, Volume 125, November, Pages 234-239, 2016 In this study, the contact resistance of various metals to chemical vapour deposited (CVD)…”
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Enhanced asymmetry in monolayer graphene geometric diodes by Passi, Vikram, Gahoi, Amit, Lemme, Max C.

“…Monolayer graphene geometric diodes with neck width of 50 nm exhibit record high current asymmetry of 1.48. Diodes with neck angles of 30° and 45° show no…”
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Dependable contact related parameter extraction in graphene-metal junctions by Gahoi, Amit, Kataria, Satender, Driussi, Francesco, Venica, Stefano, Pandey, Himadri, Esseni, David, Selmi, Luca, Lemme, Max C

“…Advanced Electronic Materials 6 (10), 2000386, 2020 The accurate extraction and the reliable, repeatable reduction of graphene - metal contact resistance…”
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Ultra Low Specific Contact Resistivity in Metal-Graphene Junctions via Atomic Orbital Engineering by Passi, Vikram, Gahoi, Amit, Marin, Enrique G, Cusati, Teresa, Fortunelli, Alessandro, Iannaccone, Giuseppe, Fiori, Gianluca, Lemme, Max C

“…Advanced Materials Interfaces, 6(1): 1801285, 2019 A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer…”
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