Search Results - "Gaddemane, G."

Advanced DFT-NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS2/WSe2 van der Waals Heterojunction TFET and WTe2/WS2 Metal/Semiconductor Contact by Afzalian, A., Akhoundi, E., Gaddemane, G., Duflou, R., Houssa, M.

“…We present, here, advanced density functional theory and nonequilibrium Green's function (DFT-NEGF) techniques that we have implemented in our ATOmistic…”
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“Hot electrons in Si lose energy mostly to optical phonons”: Truth or myth? by Fischetti, M. V., Yoder, P. D., Khatami, M. M., Gaddemane, G., Van de Put, M. L.

“…Theoretical studies of heat generation and diffusion in Si devices generally assume that hot electrons in Si lose their energy mainly to optical phonons. Here,…”
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Theoretical Study of Electronic Transport in Two-Dimensional Materials by Fischetti, M. V., Van de Put, M. L., Gaddemane, G., Chen, S., Vandenberghe, W. G., Gopalan, S.

“…Given the present interest of the VLSI industry on two-dimensional materials, theoretical studies of their charge-transport properties may help us to identify…”
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Advanced DFT–NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS 2 /WSe 2 van der Waals Heterojunction TFET and WTe 2 /WS 2 Metal/Semiconductor Contact by Afzalian, A., Akhoundi, E., Gaddemane, G., Duflou, R., Houssa, M.

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