Search Results - "GRUBER, Th"
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1
Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy
Published in Applied physics letters (20-10-2003)“…The development of ZnO-based semiconductor devices requires band gap engineering. Ternary Zn1−xCdxO allows reduction of the band gap relative to ZnO, which…”
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2
Donor–acceptor pair transitions in ZnO substrate material
Published in Physica. B, Condensed matter (01-12-2001)“…We investigate the state-of-the-art ZnO substrate material grown by seeded chemical vapour transport. The low-temperature photoluminescence (PL) spectra are…”
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3
Magnetoresistance in epitaxially grown degenerate ZnO thin films
Published in Applied physics letters (12-09-2005)“…The magnetoresistance of high-quality epitaxial doped ZnO ( : Ga ) thin films with various electron concentrations ranging from 3.2 × 10 18 to 1.3 × 10 20 cm −…”
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4
Electron spin manipulation using semimagnetic resonant tunneling diodes
Published in Applied physics letters (19-02-2001)“…One major challenge for the development of spintronic devices is the control of the spin polarization of an electron current. We propose and demonstrate the…”
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5
Molecular beam epitaxy of high-quality ZnO using hydrogen peroxide as an oxidant
Published in Journal of crystal growth (01-09-2004)“…ZnO layers were grown on (0 0 0 1) GaN/sapphire substrates by molecular beam epitaxy (MBE) with the use of hydrogen peroxide as an oxidant. Single-crystal ZnO…”
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6
A CHAMP-only gravity field model from kinematic orbits using the energy integral
Published in Geophysical research letters (01-10-2003)“…In this paper we present results of a global gravity field recovery using half a year of CHAMP data. We use the energy integral of the motion of a satellite to…”
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7
Simulation of the time-variable gravity field by means of coupled geophysical models
Published in Earth system science data (01-01-2011)“…Time variable gravity fields, reflecting variations of mass distribution in the system Earth is one of the key parameters to understand the changing Earth…”
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8
MOVPE growth of ZnO using various oxygen precursors
Published in Journal of crystal growth (01-02-2003)“…The II–VI compound semiconductor ZnO is already widely used for various applications such as UV resistive coatings, gas sensors and surface acoustic wave…”
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Journal Article Conference Proceeding -
9
MOCVD Growth of ZnO for Optoelectronic Applications
Published in Physica status solidi. A, Applied research (01-07-2002)“…In this paper we report on the metal‐organic chemical vapour deposition of ZnO layers. We focus on heteroepitaxial growth on c‐plane Al2O3 and the influence of…”
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10
ZnO metal–organic vapor phase epitaxy: present state and prospective applications
Published in Journal of alloys and compounds (26-05-2004)“…Due to its band gap of 3.3eV and exciton binding energy of 60meV, ZnO is a very interesting candidate for UV optoelectronics. Beyond that, the incorporation of…”
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Journal Article Conference Proceeding -
11
Comparison of linear and nonlinear optical spectra of various ZnO epitaxial layers and of bulk material obtained by different experimental techniques
Published in Physica Status Solidi (b) (01-03-2004)“…We investigate ZnO epitaxial layers grown by MBE (Molecular Beam Epitaxy) and MOVPE (Metal Organic Vapor Phase Epitaxy) techniques. The samples show similar…”
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Journal Article Conference Proceeding -
12
ZnMgO epilayers and ZnO–ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region
Published in Applied physics letters (28-06-2004)“…We have investigated the properties of ZnMgO epilayers and ZnO–ZnMgO quantum well structures grown by metalorganic vapor-phase epitaxy. A well-controlled…”
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13
Validation of GOCE gravity field models by means of orbit residuals and geoid comparisons
Published in Journal of geodesy (01-11-2011)“…Three GOCE-based gravity field solutions have been computed by ESA’s high-level processing facility and were released to the user community. All models are…”
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14
Probing the electrostatic potential of charged dislocations in n-GaN and n-ZnO epilayers by transmission electron holography
Published in Physical review. B, Condensed matter and materials physics (15-06-2006)“…Epitaxial layers frequently contain a high density of threading dislocations, which may exceed values of 10{sup 9} cm{sup -2} for ZnO and GaN. To study the…”
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15
Origin and consequences of a high stacking fault density in epitaxial ZnO layers
Published in Applied physics letters (18-11-2002)“…Transmission electron microscopy was applied to study ZnO grown by metalorganic vapor phase epitaxy on Al2O3(0001) substrates. The defect structure of the…”
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16
MOCVD Growth of ZnO on Different Substrate Materials
Published in Physica status solidi. B. Basic research (01-01-2002)“…ZnO layers have been grown by metal‐organic chemical vapor deposition using diethylzinc and iso‐propanol. Heteroepitaxial growth on c‐plane sapphire and GaN…”
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Journal Article Conference Proceeding -
17
Temperature-dependent exciton polariton photoluminescence in ZnO films
Published in Physical review. B, Condensed matter and materials physics (01-04-2004)“…The polarized photoluminescence (PL) in a (0001) oriented ZnO epitaxial film is studied in the temperature range 4.5-250 K. We report the evidence of exciton…”
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18
Simulation of oceanic bottom pressure for gravity space missions
Published in Geophysical journal international (01-11-2001)“…Oceanic bottom pressure is affected by mass redistribution in the ocean and atmosphere, and it influences gravity field determinations by the new satellite…”
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19
A CHAMP-only gravity field model from kinematic orbits using the energy integral
Published in Geophysical research letters (2003)Get full text
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20
Temperature-dependent polarized luminescence of exciton polaritons in a ZnO film
Published in Physica status solidi. A, Applications and materials science (01-02-2005)“…We report on the studies of linearly polarized photoluminescence (PL) in a (0001) oriented ZnO epitaxial film, grown by metal organic chemical vapor deposition…”
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