Search Results - "GRANZNER, Ralf"

Empirical Model for the Effective Electron Mobility in Silicon Nanowires by Granzner, Ralf, Polyakov, Vladimir M., Schippel, Christian, Schwierz, Frank

“…An empirical model for the effective electron mobility in silicon nanowires (SiNWs) is presented. The model is based on published mobility data from numerical…”
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Quantum Effects on the Gate Capacitance of Trigate SOI MOSFETs by Granzner, R, Thiele, S, Schippel, C, Schwierz, F

“…Scaling effects on the gate capacitance of trigate MOS field-effect transistors are studied by means of analytical models and numerical self-consistent…”
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High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers by Ture, Erdin, Bruckner, Peter, Godejohann, Birte-Julia, Aidam, Rolf, Alsharef, Mohamed, Granzner, Ralf, Schwierz, Frank, Quay, Rudiger, Ambacher, Oliver

“…Through implementation of the 3-D tri-gate topology, GaN-based high-electron mobility transistors (HEMTs) have been fabricated and high-frequency performances…”
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Performance Fluctuations in 10-nm Trigate Metal--Oxide--Semiconductor Field-Effect Transistors: Impact of the Channel Geometry by Granzner, Ralf, Schwierz, Frank, Engert, Sonja, Töpfer, Hannes

“…Off-current and threshold voltage fluctuations in trigate (TG), and single-gate (SG) silicon-on-insulator (SOI) MOSFETs with a gate length of 10 nm are studied…”
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On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs by Granzner, Ralf, Polyakov, V.M, Schwierz, F, Kittler, M, Doll, T

“…The drain currents of nanometer double-gate MOSFETs with gate lengths in the range from 100 to 5 nm are calculated using a hierarchy of simulation approaches…”
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Trap-assisted tunnelling current in MIM structures by Racko Juraj, Mikolášek Miroslav, Granzner Ralf, Breza Juraj, Donoval Daniel, Grmanová Alena, Harmatha Ladislav, Schwierz Frank, Fröhlich Karol

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Theoretical Investigation of Trigate AlGaN/GaN HEMTs by Alsharef, Mohamed A., Granzner, Ralf, Schwierz, Frank

“…The operation of AlGaN/GaN trigate high-electron mobility transistor (HEMT) structures is investigated by numerical simulations. It is shown that the threshold…”
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RF Performance of Trigate GaN HEMTs by Alsharef, Mohamed, Christiansen, Max, Granzner, Ralf, Ture, Erdin, Quay, Ridiger, Ambacher, Oliver, Schwierz, Frank

“…The impact of the trigate GaN high electron mobility transistor (HEMT) body geometry on the device RF performance is investigated by 3-D numerical simulations…”
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Graphene Nanoribbons for Electronic Devices by Geng, Zhansong, Hähnlein, Bernd, Granzner, Ralf, Auge, Manuel, Lebedev, Alexander A., Davydov, Valery Y., Kittler, Mario, Pezoldt, Jörg, Schwierz, Frank

“…Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such…”
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Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling by Racko, Juraj, Benko, Peter, Mikolášek, Miroslav, Granzner, Ralf, Kittler, Mario, Schwierz, Frank, Harmatha, Ladislav, Breza, Juraj

“…•A model of trap-assisted tunnelling in heterostructures was developed and combined with a model of direct tunnelling.•The effect of Al distribution in the…”
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Schottky Source LDMOS - Electrical SOA Improvement through BJT Suppression by Toner, Brendan, Frank, Markus, Steinbeck, Lutz, Eisenbrandt, Stefan, Granzner, Ralf, Davis, Darin, Richards, William R., Dolny, Gary M., Johnson, Terry

“…This paper introduces the first application of a Schottky source approach for the purpose of expanding the Electrical Safe Operating Area (E-SOA) of a HV…”
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A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times by RACKO, Juraj, BENKO, Peter, HOTOVY, Ivan, HARMATHA, Ladislav, MIKOLASEK, Miroslav, GRANZNER, Ralf, KITTLER, Mario, SCHWIERZ, Frank, BREZA, Juraj

“…The work presents a physical model of trap-assisted tunneling that can quantitatively determine the effect of traps upon the total current through a…”
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Performance of tri-gate AlGaN/GaN HEMTs by Alsharef, Mohamed, Granzner, Ralf, Schwierz, Frank, Ture, Erdin, Quay, Ruediger, Ambacher, Oliver

“…The performance of the GaN-based tri-gate HEMT is investigated by 3D numerical simulations. The tri-gate concept is shown to provide normally-off operation and…”
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An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs by Granzner, R., Schwierz, F., Polyakov, V.M.

“…An analytical model describing the effects of 2-D quantum-mechanical carrier confinement on the threshold voltage V th of multiple-gate MOSFETs with…”
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Electron mobility in silicon nanowire mosfets by Granzner, Ralf, Schwierz, Frank

“…An empirical model for the effective electron mobility in silicon nanowires (SiNWs) is presented that can be used for modeling and simulation purposes as well…”
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Vertical design of InN field effect transistors by Granzner, Ralf, Kittler, Mario, Schwierz, Frank, Polyakov, Vladimir M

“…The vertical design of indium nitride field effect transistors is investigated by numerical simulation. To this end, the Schrödinger equations for electrons…”
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MOSFET scaling: Impact of two-dimensional channel materials by Granzner, Ralf, Zhansong Geng, Kinberger, Wilhelm, Schwierz, Frank

“…The scaling behavior of MOSFETs based on two-dimensional (2D) materials is investigated by means of numerical simulation and analytical modeling. Due to their…”
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A new model of trap assisted band-to-band tunnelling by Mikolášek, Miroslav, Racko, Juraj, Harmatha, Ladislav, Gallo, Ondrej, Režnák, Jan, Schwierz, Frank, Granzner, Ralf

“…The paper describes a new approach to calculate currents in a PN diode based on the extension of the Shockley-Read-Hall recombination-generation model…”
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Current transport in MIM Structures by Racko, J., Harmatha, L., Schwierz, F., Granzner, R., Breza, J., Frohlich, K.

“…We present a new model of current transport in MIM structures due to quantum mechanical tunnelling. In addition to direct tunnelling through an insulating…”
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