Search Results - "GOSSLA, M"

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    CdTe–CdS solar cells — Production in a new baseline and investigation of material properties by Hädrich, M., Lorenz, N., Metzner, H., Reislöhner, U., Mack, S., Gossla, M., Witthuhn, W.

    Published in Thin solid films (31-05-2007)
    “…In this paper, we describe our new baseline for CSS–CdTe–CdS solar cells on 10 × 10 cm 2 substrates. The deposition of the p–n junction and all the following…”
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    Journal Article Conference Proceeding
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    Defect-related photoluminescence of epitaxial CuInS2 by Eberhardt, J., Metzner, H., Goldhahn, R., Hudert, F., Reislöhner, U., Hülsen, C., Cieslak, J., Hahn, Th, Gossla, M., Dietz, A., Gobsch, G., Witthuhn, W.

    Published in Thin solid films (01-06-2005)
    “…Using molecular beam epitaxy (MBE), CuInS2 (CIS) films have been grown on 4--in Si(111) substrates. For a detailed investigation by means of photoluminescence…”
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    Journal Article
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    Rutherford backscattering spectroscopy of rough films: Theoretical considerations by Metzner, H., Gossla, M., Hahn, Th

    “…We present a new approach for the analysis of Rutherford backscattering spectra of rough films. We show, how the height distribution of a rough film on a…”
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    Journal Article
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    Rutherford backscattering spectroscopy of rough films: Experimental aspects by Metzner, H., Hahn, Th, Gossla, M., Conrad, J., Bremer, J.-H.

    “…We present experimental aspects of a new approach for the analysis of Rutherford backscattering spectra of rough films. Using some simplifying assumptions, we…”
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    Journal Article
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    Five-source PVD for the deposition of Cu(In 1− x Ga x )(Se 1− y S y ) 2 absorber layers by Gossla, Mario, Shafarman, William N.

    Published in Thin solid films (01-06-2005)
    “…A new five-source PVD system was developed for the deposition of Cu(In 1− x Ga x )(Se 1− y S y ) 2 (CIGSS) thin films. The system allows the independent and…”
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    Journal Article
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    Sulphurization of single-phase Cu 11In 9 precursors for CuInS 2 solar cells by Joswig, A., Gossla, M., Metzner, H., Reislöhner, U., Hahn, Th, Witthuhn, W.

    Published in Thin solid films (2007)
    “…Using Rutherford backscattering (RBS), X-ray diffraction (XRD), and scanning electron microscopy (SEM), the sulphurization of single-phase Cu 11In 9 precursors…”
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    Journal Article
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    Epitaxial and polycrystalline CuInS 2 thin films: A comparison of opto-electronic properties by Eberhardt, J., Schulz, K., Metzner, H., Cieslak, J., Hahn, Th, Reislöhner, U., Gossla, M., Hudert, F., Goldhahn, R., Witthuhn, W.

    Published in Thin solid films (2007)
    “…Epitaxial and polycrystalline thin CuInS 2 (CIS) layers were grown by means of molecular beam epitaxy (MBE) on single crystalline silicon substrates of 4 inch…”
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    Journal Article
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    Metastability of CuInS2 and its implications on thin-film growth by Hahn, Thomas, Cieslak, Janko, Metzner, Heinrich, Eberhardt, Jens, Reislöhner, Udo, Gossla, Mario, Witthuhn, Wolfgang, Kräußlich, Jürgen

    Published in Applied physics letters (24-04-2006)
    “…Thin layers of the ternary chalcopyrite semiconductor CuInS2 grown epitaxially on Si(001) substrates were investigated with respect to the existing phases and…”
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    Journal Article
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    CuInS sub(2) thin-films from co-evaporated precursors by Gossla, M, Metzner, H, Mahnke, H-E

    Published in Thin solid films (29-05-2001)
    “…The sulfurization behaviour of co-evaporated Cu-In precursor films in diluted H sub(2)S atmosphere is investigated as a function of process temperature, time,…”
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    Journal Article
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    CuInS 2 thin-films from co-evaporated precursors by Gossla, M, Metzner, H, Mahnke, H.-E

    Published in Thin solid films (2001)
    “…The sulfurization behaviour of co-evaporated Cu–In precursor films in diluted H 2S atmosphere is investigated as a function of process temperature, time,…”
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    Journal Article
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    Investigation of thin films of the Cu-In and CuInS sub(2) system by Gossla, M, Mahnke, H-E, Metzner, H

    Published in Thin solid films (01-01-2000)
    “…Phase formation processes in coevaporated CuIn-films (precursors), and the formation of CuInS sub(2) from these precursors by reactive annealing were…”
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    Journal Article
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    Defect-related photoluminescence of epitaxial CuInS 2 by Eberhardt, J., Metzner, H., Goldhahn, R., Hudert, F., Reislöhner, U., Hülsen, C., Cieslak, J., Hahn, Th, Gossla, M., Dietz, A., Gobsch, G., Witthuhn, W.

    Published in Thin solid films (2005)
    “…Using molecular beam epitaxy (MBE), CuInS 2 (CIS) films have been grown on 4-in Si(111) substrates. For a detailed investigation by means of photoluminescence…”
    Get full text
    Journal Article
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