Search Results - "GOSSET, G"

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  1. 1

    Signaling by IL-1β+IFN-γ and ER stress converge on DP5/Hrk activation: a novel mechanism for pancreatic β-cell apoptosis by Gurzov, E N, Ortis, F, Cunha, D A, Gosset, G, Li, M, Cardozo, A K, Eizirik, D L

    Published in Cell death and differentiation (2009)
    “…Chronic inflammation and pro-inflammatory cytokines are important mediators of pancreatic β -cell destruction in type 1 diabetes (T1D). We presently show that…”
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    Journal Article
  2. 2

    Laboratory metabolic evolution improves acetate tolerance and growth on acetate of ethanologenic Escherichia coli under non-aerated conditions in glucose-mineral medium by Fernández-Sandoval, M. T., Huerta-Beristain, G., Trujillo-Martinez, B., Bustos, P., González, V., Bolivar, F., Gosset, G., Martinez, A.

    Published in Applied microbiology and biotechnology (01-12-2012)
    “…In this work, Escherichia coli MG1655 was engineered to produce ethanol and evolved in a laboratory process to obtain an acetate tolerant strain called MS04 (…”
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  3. 3

    Optimum melanin production using recombinant Escherichia coli by Lagunas-Muñoz, V.H, Cabrera-Valladares, N, Bolívar, F, Gosset, G, Martínez, A

    Published in Journal of applied microbiology (01-11-2006)
    “…A parametric study was conducted to define optimum conditions to achieve high yields in the conversion of tyrosine to eumelanin (EuMel) using recombinant…”
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    Journal Article
  4. 4

    Angle-resolved x-ray photoelectron spectroscopy of ultrathin Al2O3 films grown by atomic layer deposition by Renault, O., Gosset, L. G., Rouchon, D., Ermolieff, A.

    “…Thin (45 nm) and ultrathin (4.5–1 nm) Al2O3 layers deposited on HF-stripped Si or thin SiO2 surfaces by atomic layer deposition were studied by angle-resolved…”
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    Journal Article
  5. 5

    Characterization of sugar mixtures utilization by an Escherichia coli mutant devoid of the phosphotransferase system by HERNANDEZ-MONTALVO, V, VALLE, F, BOLIVAR, F, GOSSET, G

    Published in Applied microbiology and biotechnology (01-10-2001)
    “…Due to catabolite repression in microorganisms, sugar mixtures cannot be metabolized in a rapid and efficient manner. Therefore, the development of mutant…”
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    Journal Article
  6. 6

    Analysis of carbon metabolism in Escherichia coli strains with an inactive phosphotransferase system by (13)C labeling and NMR spectroscopy by Flores, S, Gosset, G, Flores, N, de Graaf, A A, Bolívar, F

    Published in Metabolic engineering (01-04-2002)
    “…We have developed Escherichia coli strains that internalize glucose utilizing the GalP permease instead of the phosphoenolpyruvate:carbohydrate…”
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  7. 7

    Response to different environmental stress conditions of industrial and laboratory Saccharomyces cerevisiae strains by GARAY-ARROYO, A, COVARRUBIAS, A. A, CLARK, I, NINO, I, GOSSET, G, MARTINEZ, A

    Published in Applied microbiology and biotechnology (01-02-2004)
    “…Two sets of Saccharomyces cerevisiae strains were compared for their physiological responses to different stress conditions. One group is composed of three…”
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  8. 8

    Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O by Gosset, L.G., Damlencourt, J.-F., Renault, O., Rouchon, D., Holliger, Ph, Ermolieff, A., Trimaille, I., Ganem, J.-J., Martin, F., Séméria, M.-N.

    Published in Journal of non-crystalline solids (01-05-2002)
    “…Thin Al2O3 layers were grown by atomic layer deposition using trimethylaluminum (TMA) and water as precursors on 1.2 nm thermal SiO2 and HF cleaned Si…”
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    Journal Article Conference Proceeding
  9. 9
  10. 10

    Advanced Cu interconnects using air gaps by Gosset, L.G., Farcy, A., de Pontcharra, J., Lyan, Ph, Daamen, R., Verheijden, G.J.A.M., Arnal, V., Gaillard, F., Bouchu, D., Bancken, P.H.L., Vandeweyer, T., Michelon, J., Hoang, V. Nguyen, Hoofman, R.J.O.M., Torres, J.

    Published in Microelectronic engineering (01-12-2005)
    “…The integration of air gaps for advanced Cu interconnects is mandatory to achieve the performances required for high performance integrated circuits (ICs). The…”
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    Journal Article Conference Proceeding
  11. 11

    Engineering the Escherichia coli fermentative metabolism by Orencio-Trejo, M, Utrilla, J, Fernández-Sandoval, M T, Huerta-Beristain, G, Gosset, G, Martinez, A

    “…Fermentative metabolism constitutes a fundamental cellular capacity for industrial biocatalysis. Escherichia coli is an important microorganism in the field of…”
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    Journal Article
  12. 12

    Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects by Chhun, S., Gosset, L.G., Casanova, N., Ney, D., Delille, D., Trouiller, C., Hopstaken, M., Chausse, P., Grégoire, M., Gautier, B., Dupuy, J.-C., Torres, J.

    Published in Microelectronic engineering (01-12-2005)
    “…Self-aligned barriers have been widely investigated in the replacement of standard PECVD dielectric liners to decrease coupling capacitance. As an alternative…”
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    Journal Article Conference Proceeding
  13. 13

    Microbial Origin of Plant-Type 2-Keto-3-Deoxy-d-arabino-Heptulosonate 7-Phosphate Synthases, Exemplified by the Chorismate- and Tryptophan-Regulated Enzyme from Xanthomonas campestris by Gosset, G, Bonner, C A, Jensen, R A

    Published in Journal of Bacteriology (01-07-2001)
    “…Article Usage Stats Services JB Citing Articles Google Scholar PubMed Related Content Social Bookmarking CiteULike Delicious Digg Facebook Google+ Mendeley…”
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  14. 14

    Chemical etching solutions for air gap formation using a sacrificial oxide/polymer approach by Gaillard, F., de Pontcharra, J., Gosset, L.G., Lyan, Ph, Bouchu, D., Daamen, R., Louveau, O., Besson, P., Passemard, G., Torres, J.

    Published in Microelectronic engineering (01-11-2006)
    “…The formation of intra metal level “air cavities” using a sacrificial oxide in a Dual Damascene copper interconnect structure was investigated for different HF…”
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    Journal Article Conference Proceeding
  15. 15

    New techniques to characterize properties of advanced dielectric barriers for sub-65 nm technology node by Vitiello, J., Ducote, V., Farcy, A., Gosset, L.G., Le-Friec, Y., Hopstaken, M., Jullian, S., Cordeau, M., Ailhas, C., Chapelon, L.L., Barbier, D., Veillerot, M., Danel, A., Torres, J.

    Published in Microelectronic engineering (01-11-2006)
    “…Of great interest for sub-65 nm interconnect technologies, low- k barriers are potentially sensitive to Cu diffusion and oxygen-based contamination,…”
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    Journal Article Conference Proceeding
  16. 16
  17. 17

    Cu surface treatment influence on Si adsorption properties of CuSiN self-aligned barriers for sub-65 nm technology node by Chhun, S., Gosset, L.G., Michelon, J., Girault, V., Vitiello, J., Hopstaken, M., Courtas, S., Debauche, C., Bancken, P.H.L., Gaillard, N., Bryce, G., Juhel, M., Pinzelli, L., Guillan, J., Gras, R., Van Schravendijk, B., Dupuy, J.-C., Torres, J.

    Published in Microelectronic engineering (01-11-2006)
    “…Self-aligned barriers are widely investigated either in replacement of dielectric liners to decrease the total interconnect k value or as a treatment prior…”
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    Journal Article Conference Proceeding
  18. 18

    Influence of SiH4 process step on physical and electrical properties of advanced copper interconnects by Chhun, S., Gosset, L.G., Casanova, N., Guillaumond, J.F., Dumont-Girard, P., Federspiel, X., Pantel, R., Arnal, V., Arnaud, L., Torres, J.

    Published in Microelectronic engineering (01-10-2004)
    “…Self-aligned barriers on copper are widely investigated as a promising solution to replace standard PECVD dielectric barriers for the 65 nm technology node and…”
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    Journal Article Conference Proceeding
  19. 19

    Hybrid punch through approach to address electroless related integration issues of hybrid CoWP/SiCN barriers by Guillan, J., Gosset, L.G., Delsol, R., Ollier, E., Brun, Ph, Petitprez, E., Gras, R., Girault, V., Gall, M., Hauschildt, M., Torres, J.

    Published in Microelectronic engineering (01-11-2007)
    “…Integration of CoWP self-aligned barriers in hybrid stack with SiCN liner in a standard 65 nm technology node integration scheme faces several issues. For…”
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    Journal Article Conference Proceeding
  20. 20

    Integration of SiOC air gaps in copper interconnects by Gosset, L.G, Arnal, V, Brun, Ph, Broekaart, M, Monget, C, Casanova, N, Rivoire, M, Oberlin, J.-C, Torres, J

    Published in Microelectronic engineering (01-11-2003)
    “…The formation of air gaps by means of a non-conformal chemical vapor deposition (CVD) on patterned wafers was successfully demonstrated using SiOC ( K=2.9) as…”
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    Journal Article Conference Proceeding