Search Results - "GOPE, Jhuma"

Influence of deposition temperature of thermal ALD deposited Al2O3 films on silicon surface passivation by Batra, Neha, Gope, Jhuma, Vandana, Panigrahi, Jagannath, Singh, Rajbir, Singh, P. K.

“…The effect of deposition temperature (Tdep) and subsequent annealing time (tanl) of atomic layer deposited aluminum oxide (Al2O3) films on silicon surface…”
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Silver-decorated multiwall carbon nanotubes: synthesis characterization and application in polymer composite-based devices by Yadav, Anjali, Upadhyaya, Aditi, Gope, Jhuma, Gupta, Saral K., Negi, Chandra Mohan Singh

“…The present work reports a novel synthesis procedure to decorate multiwall carbon nanotubes (MWCNTs) by silver (Ag) nanoparticles (NPs) via silver nitrate…”
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Impedance spectroscopy of crystalline silicon solar cell: Observation of negative capacitance by Panigrahi, Jagannath, Vandana, Singh, Rajbir, Batra, Neha, Gope, Jhuma, Sharma, Mukul, Pathi, P., Srivastava, S.K., Rauthan, C.M.S., Singh, P.K.

“…•Impedance spectroscopy is used to study industrial silicon solar cell under different bias and illumination.•Pseudo capacitance behaviour is observed in the…”
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Amorphous and nanocrystalline silicon made by varying deposition pressure in PECVD process by Gope, Jhuma, Kumar, Sushil, Parashar, A., Dixit, P.N., Rauthan, C.M.S., Panwar, O.S., Patel, D.N., Agarwal, S.C.

“…Silicon thin films are deposited using plasma enhanced chemical vapor deposition (PECVD) of silane, argon, hydrogen mixture at various pressures in the range…”
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Silicon surface passivation using thin HfO2 films by atomic layer deposition by Gope, Jhuma, Vandana, Batra, Neha, Panigrahi, Jagannath, Singh, Rajbir, Maurya, K.K., Srivastava, Ritu, Singh, P.K.

“…•HfO2 films using thermal ALD are studied for silicon surface passivation.•As-deposited thin film (∼8nm) shows better passivation with surface recombination…”
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Highly conductive boron doped micro/nanocrystalline silicon thin films deposited by VHF-PECVD for solar cell applications by Juneja, Sucheta, Sudhakar, S., Gope, Jhuma, Lodhi, Kalpana, Sharma, Mansi, kumar, Sushil

“…AFM images of boron doped micro/nanocrystalline silicon films at different diborane gas flow. [Display omitted] •High deposition rate of 10Å/s was achieved for…”
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Mixed phase silicon thin films grown at high rate using 60 MHz assisted VHF-PECVD technique by Juneja, Sucheta, Sudhakar, S., Gope, Jhuma, Kumar, Sushil

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Mixed phase silicon thin films grown at high rate using 60MHz assisted VHF-PECVD technique by Juneja, Sucheta, Sudhakar, S., Gope, Jhuma, Kumar, Sushil

“…Mixed phase amorphous and nanocrystalline silicon (a-Si:H and nc-Si:H) thin films were deposited by VHF-PECVD (60MHz) using Argon (Ar) as the diluent of…”
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Influence of argon dilution on the growth of amorphous to ultra nanocrystalline silicon films using VHF PECVD process by Gope, Jhuma, Kumar, Sushil, Sudhakar, S., Lodhi, Kalpana, Rauthan, C.M.S., Srivastava, P.C.

“…•Silicon films were grown by variation in argon concentration (far%).•Nucleation and growth of crystallites were observed at far=82% and 87%,…”
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Effect of silane flow rate on structural, electrical and optical properties of silicon thin films grown by VHF PECVD technique by Gope, Jhuma, Kumar, Sushil, Sudhakar, S., Rauthan, C.M.S., Srivastava, P.C.

“…Hydrogenated silicon thin films deposited by VHF PECVD process for various silane flow rates have been investigated. The silane flow rate was varied from…”
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Influence of argon dilution on growth and properties of hydrogenated nanocrystalline silicon films by Parashar, A., Kumar, Sushil, Gope, Jhuma, Rauthan, C.M.S., Dixit, P.N., Hashmi, S.A.

“…The effect of argon concentration (66–87%) in total gaseous mixture (SiH 4+H 2+Ar) on growth and properties of hydrogenated nanocrystalline silicon films…”
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Influence of deposition temperature of thermal ALD deposited Al{sub 2}O{sub 3} films on silicon surface passivation by Batra, Neha, Panigrahi, Jagannath, Singh, Rajbir, Singh, P. K., Silicon Solar Cell Group, Gope, Jhuma, Vandana

“…The effect of deposition temperature (T{sub dep}) and subsequent annealing time (t{sub anl}) of atomic layer deposited aluminum oxide (Al{sub 2}O3) films on…”
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Growth of Mixed-Phase Amorphous and Ultra Nanocrystalline Silicon Thin Films in the Low Pressure Regime by a VHF PECVD Process by Gope, Jhuma, Kumar, Sushil, Singh, Sukhbir, Rauthan, C. M. S., Srivastava, P. C.

“…A mixed-phase of amorphous (a-Si:H) and ultra nanocrystalline silicon thin films (ultra nc-Si:H) were grown in a low deposition pressure regime…”
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High-pressure condition of SiH4+Ar+H2 plasma for deposition of hydrogenated nanocrystalline silicon film by PARASHAR, A, KUMAR, Sushil, DIXIT, P. N, GOPE, Jhuma, RAUTHAN, C. M. S, HASHMI, S. A

“…The characteristics of 13.56-MHz discharged SiH4+Ar+H2 plasma at high pressure (2-8 Torr), used for the deposition of hydrogenated nanocrystalline silicon…”
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RF power density dependent phase formation in hydrogenated silicon films by Parashar, A., Kumar, Sushil, Gope, Jhuma, Rauthan, C.M.S., Hashmi, S.A., Dixit, P.N.

“…Hydrogenated amorphous and micro/nanocrystalline silicon films have been deposited using RF (13.56 MHz) PECVD technique in the RF power density range of 177 to…”
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High-pressure condition of SiH 4+Ar+H 2 plasma for deposition of hydrogenated nanocrystalline silicon film by Parashar, A., Kumar, Sushil, Dixit, P.N., Gope, Jhuma, Rauthan, C.M.S., Hashmi, S.A.

“…The characteristics of 13.56-MHz discharged SiH 4+Ar+H 2 plasma at high pressure (2–8 Torr), used for the deposition of hydrogenated nanocrystalline silicon…”
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