Search Results - "GILMER, D"

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  1. 1

    Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament by Balatti, S., Larentis, S., Gilmer, D. C., Ielmini, D.

    Published in Advanced materials (Weinheim) (13-03-2013)
    “…Multilevel operation in resistive switching memory (RRAM) based on HfOx is demonstrated through variable sizes and orientations of the conductive filament…”
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    Journal Article
  2. 2

    Analysis of the relative frequencies of the multipartite BNYVV genomic RNAs in different plants and tissues by Dall'Ara, M, Guo, Y, Poli, D, Gilmer, D, Ratti, C

    Published in Journal of general virology (01-01-2024)
    “…Multipartite virus genomes are composed of two or more segments, each packaged into an independent viral particle. A potential advantage of multipartitism is…”
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    Journal Article
  3. 3

    Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures by Lanza, M., Zhang, K., Porti, M., Nafría, M., Shen, Z. Y., Liu, L. F., Kang, J. F., Gilmer, D., Bersuker, G.

    Published in Applied physics letters (19-03-2012)
    “…Resistive switching (RS) phenomenon in the HfO2 dielectric has been indirectly observed at device level in previous studies using metal-insulator-metal…”
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    Journal Article
  4. 4

    Varied Movement Strategies Employed by Triple Gene Block–Encoding Viruses by Verchot-Lubicz, Jeanmarie, Torrance, Lesley, Solovyev, Andrey G, Morozov, Sergey Yu, Jackson, Andrew O, Gilmer, David

    Published in Molecular plant-microbe interactions (01-10-2010)
    “…Several RNA virus genera belonging to the Virgaviridae and Flexiviridae families encode proteins organized in a triple gene block (TGB) that facilitate…”
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    Journal Article
  5. 5

    Microscopy study of the conductive filament in HfO2 resistive switching memory devices by Privitera, S., Bersuker, G., Butcher, B., Kalantarian, A., Lombardo, S., Bongiorno, C., Geer, R., Gilmer, D.C., Kirsch, P.D.

    Published in Microelectronic engineering (01-09-2013)
    “…•We study resistive switching memories with Hf or Ti metal oxygen exchange layers.•STEM dark field and EELS are used to observe the conductive filament.•The…”
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    Journal Article
  6. 6

    Evaluation of Caffeine Degradation by Sequential Coupling of TiO2/O3/H2O2/UV Processes by Lara-Ramos, Jose A., Llanos-Diaz, Gilmer D., Diaz-Angulo, Jennyfer, Machuca-Martínez, Fiderman

    Published in Topics in catalysis (2020)
    “…This study provides new insight into the implementation and synergy effect of coupling in sequences of the photocatalysis ([TiO 2 -UVC]), ozone (O 3 ) and…”
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    Journal Article
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    Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer by Kwon, H M, T-W, Kim, Hudnall, Todd W, Bielawski, Christopher W, Maszara, W, Veksler, D, Gilmer, D, Kirsch, P D, Banerjee, S K

    Published in Applied physics letters (21-04-2014)
    “…In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating…”
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    Journal Article
  9. 9

    Memory update characteristics of carbon nanotube memristors (NRAM®) under circuitry-relevant operation conditions by Veksler, D., Bersuker, G., Bushmaker, A. W., Mason, M., Shrestha, P. R., Cheung, K. P., Campbell, J. P., Rueckes, T., Cleveland, L., Luan, H., Gilmer, D. C.

    “…Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the…”
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    Conference Proceeding
  10. 10

    Erase and Retention Improvements in Charge Trap Flash Through Engineered Charge Storage Layer by Goel, N., Gilmer, D.C., Park, H., Diaz, V., Sun, Y., Price, J., Park, C., Pianetta, P., Kirsch, P.D., Jammy, R.

    Published in IEEE electron device letters (01-03-2009)
    “…The simultaneous improvement in the erase and retention characteristics in a TANOS (TaN-Al 2 O 3 -Si 3 N 4 -SiO 2 -Si) flash memory transistor by utilizing the…”
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    Journal Article
  11. 11

    Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high- κ gate oxides by Schaeffer, J.K., Gilmer, D.C., Capasso, C., Kalpat, S., Taylor, B., Raymond, M.V., Triyoso, D., Hegde, R., Samavedam, S.B., White, B.E.

    Published in Microelectronic engineering (01-09-2007)
    “…The empirical relationship between electronegativity and effective work function is applied to a diverse set of multi-element electrode materials on hafnium…”
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    Journal Article Conference Proceeding
  12. 12

    Beet soil-borne mosaic virus RNA-3 is replicated and encapsidated in the presence of BNYVV RNA-1 and -2 and allows long distance movement in Beta macrocarpa by Ratti, Claudio, Hleibieh, Kamal, Bianchi, Laura, Schirmer, Audrey, Autonell, Concepcion Rubies, Gilmer, David

    Published in Virology (New York, N.Y.) (15-03-2009)
    “…Abstract Beet soil-borne mosaic virus (BSBMV) and Beet necrotic yellow vein virus (BNYVV) belong to the Benyvirus genus. BSBMV has been reported only in the…”
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    Journal Article
  13. 13

    Sequence variation within Beet necrotic yellow vein virus p25 protein influences its oligomerization and isolate pathogenicity on Tetragonia expansa by Klein, Elodie, Link, Didier, Schirmer, Audrey, Erhardt, Mathieu, Gilmer, David

    Published in Virus research (01-06-2007)
    “…The p25 protein encoded by Beet necrotic yellow vein virus (BNYVV) RNA-3 is a pathogenicity determinant that has been implicated in symptom exacerbation on…”
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    Journal Article
  14. 14
  15. 15

    P42 movement protein of Beet necrotic yellow vein virus is targeted by the movement proteins P13 and P15 to punctate bodies associated with plasmodesmata by ERHARDT, M, MORANT, M, RITZENTHALER, C, STUSSI-GARAUD, C, GUILLEY, H, RICHARDS, K, JONARD, G, BOUZOUBAA, S, GILMER, D

    Published in Molecular plant-microbe interactions (01-05-2000)
    “…Cell-to-cell movement of Beet necrotic yellow vein virus (BNYVV) is driven by a set of three movement proteins--P42, P13, and P15--organized into a triple gene…”
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    Journal Article
  16. 16

    Subcellular localization of the Triple Gene Block movement proteins of Beet necrotic yellow vein virus by electron microscopy by Erhardt, M., Vetter, G., Gilmer, D., Bouzoubaa, S., Richards, K., Jonard, G., Guilley, H.

    Published in Virology (New York, N.Y.) (15-09-2005)
    “…The Triple Gene Block proteins TGBp1, TGBp2, and TGBp3 of Beet necrotic yellow vein virus (BNYVV) are required for efficient cell-to-cell spread of the…”
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    Journal Article
  17. 17

    Bulk and Interface effects on voltage linearity of ZrO2–SiO2 multilayered metal-insulator-metal capacitors for analog mixed-signal applications by Park, S. D., Park, C., Gilmer, D. C., Park, H. K., Kang, C. Y., Lim, K. Y., Burham, C., Barnett, J., Kirsch, P. D., Tseng, H. H., Jammy, R., Yeom, G. Y.

    Published in Applied physics letters (13-07-2009)
    “…Quadratic voltage coefficient of capacitance (VCC) for ZrO2–SiO2 multilayered dielectric metal-insulator-metal capacitors depends strongly on the stacking…”
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    Journal Article
  18. 18

    Leakage current and electrical breakdown in metal-organic chemical vapor deposited TiO2 dielectrics on silicon substrates by Kim, Hyeon-Seag, Gilmer, D. C., Campbell, S. A., Polla, D. L.

    Published in Applied physics letters (16-12-1996)
    “…The leakage current through 190 Å TiO2 deposited through metal-organic chemical vapor deposition on p-type silicon substrates has been measured as a function…”
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    Journal Article
  19. 19

    Fermi-level pinning at the polysilicon/metal-oxide interface-Part II by Hobbs, C.C., Fonseca, L.R.C., Knizhnik, A., Dhandapani, V., Samavedam, S.B., Taylor, W.J., Grant, J.M., Dip, L.G., Triyoso, D.H., Hegde, R.I., Gilmer, D.C., Garcia, R., Roan, D., Lovejoy, M.L., Rai, R.S., Hebert, E.A., Hsing-Huang Tseng, Anderson, S.G.H., White, B.E., Tobin, P.J.

    Published in IEEE transactions on electron devices (01-06-2004)
    “…We report here that Fermi pinning at the polysilicon/metal-oxide interface causes high threshold voltages in MOSFET devices. In Part I, we investigated the…”
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    Journal Article
  20. 20

    Efficient cell-to-cell movement of beet necrotic yellow vein virus requires 3' proximal genes located on RNA 2 by Gilmer, D, Bouzoubaa, S, Hehn, A, Guilley, H, Richards, K, Jonard, G

    Published in Virology (New York, N.Y.) (01-07-1992)
    “…RNA 2 of beet necrotic yellow vein virus (BNYVV) carries six open reading frames. The four 3' proximal frames encode the proteins P42, P13, P15, and P14. The…”
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    Journal Article