Search Results - "GILLIS, H. P"

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    Low-energy electron-enhanced etching of HgCdTe by JAEHWA KIM, KOGA, T. S, GILLIS, H. P, GOORSKY, Mark S, GARWOOD, Gerald A, VARESI, John B, RHIGER, David R, JOHNSON, Scott M

    Published in Journal of electronic materials (01-07-2003)
    “…Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are…”
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    Conference Proceeding Journal Article
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    Growth and characterization of diamond-like carbon films by pulsed laser deposition and hydrogen beam treatment by Stavrides, A., Ren, J., Ho, M., Cheon, J., Zink, J., Gillis, H.P., Williams, R.S.

    Published in Thin solid films (14-12-1998)
    “…Amorphous diamond-like carbon films have been grown by pulsed laser deposition using a graphite target both with and without an atomic hydrogen beam incident…”
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    Journal Article
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    Formation of ordered nanocluster arrays by self-assembly on nanopatterned Si(100) surfaces by Winningham, Thomas A, Gillis, H.P, Choutov, D.A, Martin, Kevin P, Moore, Jon T, Douglas, Kenneth

    Published in Surface science (31-05-1998)
    “…A precisely ordered and precisely located array of 5 nm diameter nanoclusters has been fabricated by first etching into the substrate an array of holes with…”
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    Journal Article
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    Low energy electron-enhanced etching of Si(100) in hydrogen/helium direct-current plasma by Gillis, H. P., Choutov, D. A., Steiner, P. A., Piper, J. D., Crouch, J. H., Dove, P. M., Martin, K. P.

    Published in Applied physics letters (08-05-1995)
    “…Low energy electron-enhanced etching of Si(100) has been achieved by placing the sample on the anode of a dc discharge in hydrogen/helium mixtures. Over a…”
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    Journal Article
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    Smoothening mechanism for GaAs(100) surfaces during ion-enhanced plasma etching by Lee, S. H., Gillis, H. P., Ratsch, C.

    Published in Applied physics letters (17-04-2006)
    “…We present experimental data showing the development of smooth surfaces on GaAs(100) exposed simultaneously to ion bombardment and reactive species in chlorine…”
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    Journal Article
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    Applications of S-layers by Sleytr, U B, Bayley, H, Sára, M, Breitwieser, A, Küpcü, S, Mader, C, Weigert, S, Unger, F M, Messner, P, Jahn-Schmid, B, Schuster, B, Pum, D, Douglas, K, Clark, N A, Moore, J T, Winningham, T A, Levy, S, Frithsen, I, Pankovc, J, Beale, P, Gillis, H P, Choutov, D A, Martin, K P

    Published in FEMS microbiology reviews (01-06-1997)
    “…The wealth of information existing on the general principle of S-layers has revealed a broad application potential. The most relevant features exploited in…”
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    Journal Article
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    Morphological evolution of III–V semiconductors and SiO2 during low energy electron enhanced dry etching by Lee, S. H., Ho, R. M., Goorsky, M. S., Gillis, H. P., Margolese, D. I., Demine, M. A., Anz, S. J.

    “…Evolution of surface morphologies of GaAs, GaP, InP, GaN, and SiO2 during dry etching is studied. Etching was carried out in Cl2/H2/Ar plasmas with electron…”
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    Journal Article
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    Low‐energy electron beam enhanced etching of Si(100)‐(2×1) by molecular hydrogen by Gillis, H. P., Clemons, J. L., Chamberlain, J. P.

    “…The use of low‐energy electrons to enhance the rate of the reaction between H2 and Si to produce SiH x has been investigated. Etching was accomplished by…”
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    Conference Proceeding
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    Low energy electron-enhanced etching of GaAs(100) in a chlorine/hydrogen dc plasma by Gillis, H. P., Choutov, D. A., Martin, K. P., Song, Li

    Published in Applied physics letters (15-04-1996)
    “…Low energy electron-enhanced etching of GaAs(100) has been achieved by placing the sample on the anode of a low-pressure hydrogen/chlorine dc discharge…”
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    Journal Article
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    Effects of annealing and surface preparation on the properties of polycrystalline CdZnTe films grown by molecular beam epitaxy by Ringel, S. A., Sudharsanan, R., Rohatgi, A., Owens, M. S., Gillis, H. P.

    “…The effects of annealing and chemical etching on the chemical, compositional, and electrical properties of polycrystalline molecular‐beam epitaxy (MBE)‐grown…”
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    Journal Article
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    Morphological evolution of III–V semiconductors and SiO 2 during low energy electron enhanced dry etching by Lee, S. H., Ho, R. M., Goorsky, M. S., Gillis, H. P., Margolese, D. I., Demine, M. A., Anz, S. J.

    “…Evolution of surface morphologies of GaAs, GaP, InP, GaN, and SiO 2 during dry etching is studied. Etching was carried out in Cl 2 / H 2 / Ar plasmas with…”
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    Conference Proceeding
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    Hemifacial microsomia in two patients further supporting chromosomal mosaicism as a causative factor by de Ravel, T J, Legius, E, Brems, H, Van Hoestenberghe, R, Gillis, P H, Fryns, J P

    Published in Clinical dysmorphology (01-10-2001)
    “…We report two cases with hemifacial microsomia with body asymmetry associated with mosaic trisomies. The child with mosaic trisomy 9 had skin pigmentary…”
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    Journal Article
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