Search Results - "GHEERAERT, E"

Zr/oxidized diamond interface for high power Schottky diodes by Traoré, A., Muret, P., Fiori, A., Eon, D., Gheeraert, E., Pernot, J.

“…High forward current density of 103 A/cm2 (at 6 V) and a breakdown field larger than 7.7 MV/cm for diamond diodes with a pseudo-vertical architecture, are…”
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Deep depletion concept for diamond MOSFET by Pham, T. T., Rouger, N., Masante, C., Chicot, G., Udrea, F., Eon, D., Gheeraert, E., Pernot, J.

“…A stable deep depletion regime is demonstrated in metal oxide semiconductor capacitors using p -type oxygen-terminated (100) diamond as a semiconductor and…”
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Normally-OFF Diamond Reverse Blocking MESFET by Canas, J., Pakpour-Tabrizi, A. C., Trajkovic, T., Udrea, F., Eon, D., Gheeraert, E., Jackman, R. B.

“…Schottky contacts have been used to fabricate normally- OFF lateral reverse-blocking MESFETs on p-type (boron-doped) O-terminated monocrystalline diamond. The…”
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High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication by Pham, T. T., Gutiérrez, M., Masante, C., Rouger, N., Eon, D., Gheeraert, E., Araùjo, D., Pernot, J.

“…In this letter, we report on the improvement of gate controlled Al2O3/(100) boron doped (B-doped) oxygen-terminated diamond (O-diamond) Metal Oxide…”
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Metal oxide semiconductor structure using oxygen-terminated diamond by Chicot, G., Maréchal, A., Motte, R., Muret, P., Gheeraert, E., Pernot, J.

“…Metal-oxide-semiconductor structures with aluminum oxide as insulator and p-type (100) mono-crystalline diamond as semiconductor have been fabricated and…”
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Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films by BUSTARRET, E, KACMARCIK, J, MARCENAT, C, GHEERAERT, E, CYTERMANN, C, MARCUS, J, KLEIN, T

“…Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (approximately…”
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Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor by Maréchal, A., Aoukar, M., Vallée, C., Rivière, C., Eon, D., Pernot, J., Gheeraert, E.

“…Diamond metal-oxide-semiconductor capacitors were prepared using atomic layer deposition at 250 °C of Al2O3 on oxygen-terminated boron doped (001) diamond…”
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Hole transport in boron delta-doped diamond structures by Chicot, G., Tran Thi, T. N., Fiori, A., Jomard, F., Gheeraert, E., Bustarret, E., Pernot, J.

“…The temperature dependence of the hole sheet density and mobility of four capped delta boron doped [100]-oriented epilayers has been investigated…”
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Effects of high-power laser irradiation on sub-superficial graphitic layers in single-crystal diamond by Picollo, F., Rubanov, S., Tomba, C., Battiato, A., Enrico, E., Perrat-Mabilon, A., Peaucelle, C., Tran Thi, T.N., Boarino, L., Gheeraert, E., Olivero, P.

“…We report on the structural modifications induced by a λ = 532 nm ns-pulsed high-power laser on sub-superficial graphitic layers in single-crystal diamond…”
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Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors by Loto, O., Florentin, M., Masante, C., Donato, N., Hicks, M.-L., Pakpour-Tabrizi, A. C., Jackman, R. B., Zuerbig, V., Godignon, P., Eon, D., Pernot, J., Udrea, F., Gheeraert, E.

“…This paper shows the effect of performing consecutive measurement prior to negative bias stress instability (NBSI) on diamond metal-oxide-semiconductor…”
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Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations by Maréchal, A., Rouger, N., Crébier, J.-C., Pernot, J., Koizumi, S., Teraji, T., Gheeraert, E.

“…In the view of predicting the performances as well as anticipating the architecture of the future diamond devices, it is of fundamental importance to…”
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Hole injection contribution to transport mechanisms in metal/p−/p++ and metal/oxide/p−/p++ diamond structures by Muret, P., Eon, D., Traoré, A., Maréchal, A., Pernot, J., Gheeraert, E.

“…Heterostructures such as Schottky diodes and metal/oxide/ semiconductor structures are the building blocks of diamond electronic devices. They are able to…”
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Hall electron mobility in diamond by Pernot, J., Tavares, C., Gheeraert, E., Bustarret, E., Katagiri, M., Koizumi, S.

“…The low field Hall mobility of electron in diamond was investigated from room temperature to 873 K , both experimentally and theoretically. The acoustic…”
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Optical and electronic properties of heavily boron-doped homo-epitaxial diamond by Bustarret, E., Gheeraert, E., Watanabe, K.

“…At room temperature the optical transport and magnetotransport properties of homo‐epitaxial MPCVD diamond layers with boron contents in the 2 × 1020 to 2 ×…”
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Activation energy in low compensated homoepitaxial boron-doped diamond films by Lagrange, J.-P., Deneuville, A., Gheeraert, E.

“…High-quality homoepitaxial diamond films have been grown on 100-type Ib synthetic diamond, and boron doped by diborane from 5×10 16 to 8×10 20 cm −3. The…”
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Recent progress on diamond Schottky diode by Eon, D., Traore, A., Pernot, J., Gheeraert, E.

“…Diamond high power devices have been intensively investigated for several years because of the outstanding electrical and thermal properties of this wide band…”
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Diamond as substrate for 3C-SiC growth: A TEM study by Lloret, F., Piñero, J., Araujo, D., Villar, M. P., Gheeraert, E., Vo-Ha, A., Soulière, V., Rebaud, M., Carole, D., Ferro, G.

“…Vapor–liquid–solid (V–L–S) growth of SiC on (100) diamond substrate is reported. The crystalline quality is evaluated by transmission electron microscopy…”
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Electronic transitions of electrons bound to phosphorus donors in diamond by Gheeraert, E, Koizumi, S, Teraji, T, Kanda, H

“…A set of phosphorus doped CVD diamond films was investigated by infrared absorption spectroscopy. The photo-ionisation continuum intensity increases…”
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Behavior of CVD diamond-based TL dosimeters in radiotherapy environments using photon and electron beams from treatment accelerators by Benabdesselam, M., Petitfils, A., Wrobel, F., Mady, F., Marcié, S., Gheeraert, E.

“…Chemical Vapor Deposited (CVD) diamond has great advantages for use as thermoluminescent dosimeters in radiotherapy environment because of the reproducible…”
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Doping of single crystalline diamond with nickel by Wolfer, M., Obloh, H., Williams, O. A., Leancu, C.-C., Kirste, L., Gheeraert, E., Nebel, C. E.

“…Nickel doped single crystal diamond layers were grown by microwave‐plasma enhanced chemical vapour deposition. Optical emission spectroscopy (OES) utilised…”
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