Search Results - "GERMAIN, Marianne"

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications by Tajalli, Alaleh, Meneghini, Matteo, Besendörfer, Sven, Kabouche, Riad, Abid, Idriss, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio

“…The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage…”
Get full text

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal by Visalli, Domenica, Van Hove, Marleen, Srivastava, Puneet, Derluyn, Joff, Das, Johan, Leys, Maarten, Degroote, Stefan, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

“…The breakdown mechanism in GaN-based heterostructures (HFETs) grown on silicon substrate is investigated in detail by TCAD simulations and silicon substrate…”
Get full text

Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage by Srivastava, Puneet, Das, Jo, Visalli, Domenica, Derluyn, Joff, Van Hove, Marleen, Malinowski, Pawel E, Marcon, Denis, Geens, Karen, Kai Cheng, Degroote, Stefan, Leys, Maarten, Germain, Marianne, Decoutere, Stefaan, Mertens, Robert P, Borghs, Gustaaf

“…In this letter, we present a novel approach to enhance the breakdown voltage ( V BD ) for AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs), grown by…”
Get full text

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment by Tajalli, Alaleh, Borga, Matteo, Meneghini, Matteo, De Santi, Carlo, Benazzi, Davide, Besendörfer, Sven, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Kabouche, Riad, Abid, Idriss, Meissner, Elke, Zanoni, Enrico, Medjdoub, Farid, Meneghesso, Gaudenzio

“…We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN…”
Get full text

Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs by Visalli, D, Van Hove, M, Derluyn, J, Srivastava, P, Marcon, D, Das, J, Leys, M R, Degroote, S, Kai Cheng, Vandenplas, E, Germain, M, Borghs, G

“…We investigated the limitations of the field plate (FP) effect on breakdown voltage V BD that is due to the silicon substrate in AlGaN/GaN/AlGaN double…”
Get full text

Field-effect saccharide sensing using AlGaN/GaN heterostructures and boronic acid based chemical receptors by Schuller, Tim A., Kuball, Martin, Flower, Stephen E., James, Tony D., Fossey, John S., Marcon, Denis, Das, Jo, Degroot, Stefan, Germain, Marianne, Sarua, Andrei

“…We demonstrate a novel field-effect saccharide sensor device using an AlGaN/GaN heterostructure functionalized with a chemical receptor, featuring a thiol…”
Get full text

Solid phase epitaxy of amorphous Ge films deposited by PECVD by Ma, Quan-Bao, Lieten, Ruben, Leys, Maarten, Degroote, Stefan, Germain, Marianne, Borghs, Gustaaf

“…Amorphous thin Ge films were deposited by plasma enhanced chemical vapor deposition (PECVD) on Si(1 1 1) substrates and then annealed at 600 °C in N 2…”
Get full text

Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures by Wang, Wenfei, Derluyn, Joff, Germain, Marianne, Leys, Maarten, Degroote, Stefan, Schreurs, Dominique, Borghs, Gustaaf

Get full text

Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics by Knetzger, Michael, Meissner, Elke, Derluyn, Joff, Germain, Marianne, Friedrich, Jochen

“…In this work gallium nitride (GaN) grown on silicon substrates was investigated in order to determine critical defects responsible for differences in the…”
Get full text

A micro-electro-mechanical accelerometer based on gallium nitride on silicon by Morelle, C., Théron, D., Roch-Jeune, I., Tilmant, P., Okada, E., Vaurette, F., Grimbert, B., Derluyn, J., Degroote, S., Germain, M., Faucher, M.

“…We report on an accelerometer micro-sensor based on epitaxial gallium nitride and silicon. The device is a vibrating beam accelerometer fabricated with a…”
Get full text

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures by Kabouche, Riad, Abid, Idriss, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Tajalli, Alaleh, Meneghini, Matteo, Meneghesso, Gaudenzio, Medjdoub, Farid

“…Herein, the development of gallium nitride on silicon (GaN‐on‐Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown…”
Get full text

Low On‐Resistance and Low Trapping Effects in 1200V Superlattice GaN‐on‐Silicon Heterostructures by Kabouche, Riad, Idriss Abid, Püsche, Roland, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Tajalli, Alaleh, Meneghini, Matteo, Meneghesso, Gaudenzio, Medjdoub, Farid

“…Herein, the development of gallium nitride on silicon (GaN‐on‐Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown…”
Get full text

A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon by Everts, Jordi, Das, Jo, Van den Keybus, Jeroen, Genoe, Jan, Germain, Marianne, Driesen, Johan

“…A boost converter was constructed using a high voltage enhancement mode (E-mode) AlGaN/GaN/AlGaN DHFET transistor grown on Si<;111>. The very low dynamic…”
Get full text

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance by Visalli, Domenica, Hove, Marleen Van, Derluyn, Joff, Degroote, Stefan, Leys, Maarten, Cheng, Kai, Germain, Marianne, Borghs, Gustaaf

Get full text

Indium-Rich InGaN Films Grown on Ge Substrate by Plasma-Assisted Molecular Beam Epitaxy for Solar Water Splitting by Ma, Quan-Bao, Lieten, Ruben, Degroote, Stefan, Germain, Marianne, Borghs, Gustaaf

“…Indium-rich InGaN films were grown on Ge(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). The influence of the indium flux on the structural…”
Get full text

Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs by Crupi, G., Dongping Xiao, Schreurs, D.M.M.-P., Limiti, E., Caddemi, A., De Raedt, W., Germain, M.

“…This paper focuses on the determination and analysis of an accurate small-signal equivalent circuit for gallium-nitride high electron-mobility transistors…”
Get full text

Gallium nitride MEMS resonators: how residual stress impacts design and performances by Morelle, Christophe, Théron, Didier, Derluyn, Joff, Degroote, Stefan, Germain, Marianne, Zhang, Victor, Buchaillot, Lionel, Grimbert, Bertrand, Tilmant, Pascal, Vaurette, François, Roch-Jeune, Isabelle, Brandli, Virginie, Avramovic, Vanessa, Okada, Etienne, Faucher, Marc

“…Starting from Gallium Nitride epitaxially grown on silicon, pre-stressed micro-resonators with integrated piezoelectric transducers have been designed,…”
Get full text

AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity by Cheng, Kai, Leys, Maarten, Degroote, Stefan, Derluyn, Joff, Sijmus, Brian, Favia, Paola, Richard, Olivier, Bender, Hugo, Germain, Marianne, Borghs, Gustaaf

Get full text

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure by Abid, I., Kabouche, R., Medjdoub, F., Besendorfer, S., Meissner, E., Derluyn, J., Degroote, S., Germain, M., Miyake, H.

“…Ultra wide band gap (UWBG) materials such as AlN are part of a class of materials that have a larger band gap than conventional wide band gap (WBG) materials…”
Get full text

Laser lift-off transfer of AlGaN/GaN HEMTs from sapphire onto Si: A thermal perspective by Ji, Hangfeng, Das, Jo, Germain, Marianne, Kuball, Martin

“…We report on the thermal study of AlGaN/GaN high electron mobility transistors (HEMTs) after substrate transfer from the original sapphire substrate onto Si…”
Get full text