Search Results - "GEORGA, S. N"
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Dielectric relaxation processes in epoxy resin--ZnO composites
Published in Journal of polymer science. Part B, Polymer physics (15-02-2009)“…Polymer matrix-ZnO microcomposites were prepared in different filler concentrations. The electrical relaxation dynamics of all samples was examined by means of…”
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2
Dielectric relaxations in polyoxymethylene and in related nanocomposites: Identification and molecular dynamics
Published in Polymer (Guilford) (15-12-2014)“…Broadband dielectric spectroscopy (BDS) is employed for the study of the dielectric response of Polyoxymethylene/boehmite alumina (POM/alumina) and…”
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3
Probing the dielectric response of polyurethane/alumina nanocomposites
Published in Journal of polymer science. Part B, Polymer physics (15-11-2010)“…The dielectric properties of polyurethane (PUR) latex-boehmite alumina nanocomposites were investigated by means of broadband dielectric spectroscopy in the…”
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4
Influence of thermal oxidation on the interfacial properties of ultrathin strained silicon layers
Published in Thin solid films (01-06-2011)“…In this work we examine the influence of thermal oxidation on the electrical characteristics of ultra-thin strained silicon layers grown on relaxed…”
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5
Dielectric and conductivity processes in poly(ethylene terephthalate) and poly(ethylene naphthalate) homopolymers and copolymers
Published in Journal of polymer science. Part B, Polymer physics (01-11-2006)“…Electrical relaxation and conductivity processes in amorphous and semicrystalline poly(ethylene terephthalate) (PET) and poly(ethylene naphthalate) (PEN)…”
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6
High volume fraction carbon nanotube-epoxy composites
Published in Nanotechnology (07-10-2009)“…A versatile processing technique for fabricating epoxy nanocomposites with a high weight fraction of oxidized multi-walled carbon nanotubes is presented. Thin…”
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7
HNBR and its MWCNT reinforced nanocomposites: Crystalline morphology and electrical response
Published in European polymer journal (01-05-2014)“…[Display omitted] •Crystallinity of HNBR and MWCNT/HNBR systems increases with the addition of MWCNTs.•Recorded relaxations are related to the polymer matrix…”
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8
Controllable growth of stable germanium dioxide ultra-thin layer by means of capacitively driven radio frequency discharge
Published in Thin solid films (29-01-2016)“…It is well recognized that native oxide of germanium is hygroscopic and water soluble, while germanium dioxide is thermally unstable and it is converted to…”
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A systematic Mössbauer spectroscopy study of Y3Fe5O12 samples displaying different magnetic ac-susceptibility and electric permittivity spectra
Published in Journal of magnetism and magnetic materials (01-02-2020)“…•The frequency dependence of χ and ∊ of Y3Fe5O12 (YIG) was measured.•Only YIG samples annealed below 1470 °C exhibit dispersion in the kHz region.•Broad…”
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10
Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss
Published in Applied physics letters (08-09-2008)“…In this work we demonstrate germanium loss from uncapped substrates during low temperature drive-in annealing in inert ambient. An Arrhenius law with an…”
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11
Characterization of physical and electrical properties of BaTiO3 films deposited on p-Si by modified polymeric precursors
Published in Journal of electronic materials (01-09-2005)“…Highly uniform BaTiO3 (BTO) films with thickness well below 100 nm were deposited on p-Si by spin coating using a modified polymeric precursor method. The…”
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12
Growth of ZnO nanowires on seeding layers deposited by ALD: The influence of process parameters
Published in Microelectronic engineering (15-09-2019)“…Zinc Oxide (ZnO) nanowires are grown by hydrothermal method on ZnO seed layers deposited by Atomic Layer Deposition (ALD) at different temperatures ranging…”
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ALD deposited ZrO2 ultrathin layers on Si and Ge substrates: A multiple technique characterization
Published in Microelectronic engineering (01-12-2013)“…•Ultra thin ZrO2 layers were grown by ALD technique on p-Si, strained Si and p-Ge substrates.•The stoichiometry, thickness and valence band electronic…”
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14
Dielectric response and ac conductivity analysis of hafnium oxide nanopowder
Published in Physica scripta (01-12-2012)“…The dielectric response of hafnium oxide nanopowder was studied in the frequency range of 10−2-106 MHz and in the temperature range of 20-180 °C. Broadband…”
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15
Transient and AC electrical conductivity of porous silicon thin films
Published in Physica status solidi. A, Applied research (01-05-2003)“…AC impendance spectroscopy measurements as a function of the applied voltage in the range 0.5 V up to 3 V, as well as measurements of the transient current of…”
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Journal Article Conference Proceeding -
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Dielectric relaxation mechanisms in polyoxymethylene/polyurethane/layered silicates hybrid nanocomposites
Published in European polymer journal (01-10-2017)“…[Display omitted] •POM/PU/LS nanocomposites produced by Direct Melt (DM) compounding.•POM/PU/LS nanocomposites produced by latex-mediated Masterbatch (MB)…”
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17
CuO/Ta₂O₅ core/shell nanoparticles produced by arc-discharge in water
Published in Materials letters (01-08-2011)“…The formation of novel nanoparticles, i.e. CuO/Ta₂O₅ core/shell, via anodic arc-discharge in water is reported. Typical core diameters and shell thicknesses…”
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18
Temperature dependence of the transient and AC electrical conductivity of porous silicon thin films
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15-08-2003)“…In order to investigate the prevailing conduction mechanisms of porous silicon (PS) thin films AC impedance spectroscopy measurements, as well as transient…”
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19
Influence of thermal processing on the electrical characteristics of MOS capacitors on strained-silicon substrates
Published in Thin solid films (03-11-2008)“…In this work the influence of thermal oxidation and subsequent thermal processing on the electrical characteristics of strained-Silicon (s-Si), MOS capacitors…”
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Journal Article Conference Proceeding -
20
Correlation between infrared transmission spectra and the interface trap density of SiO2 films
Published in Microelectronics and reliability (01-04-2007)Get full text
Conference Proceeding Journal Article