Search Results - "GASSILLOUD, Remy"

Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges by Borrel, Julien, Hutin, Louis, Kava, Donato, Gassilloud, Remy, Bernier, Nicolas, Morand, Yves, Nemouchi, Fabrice, Gregoire, Magali, Dubois, Emmanuel, Vinet, Maud

“…In this paper, in order to provide a comprehensive overview of the opportunities and limitations of the metal/insulator/semiconductor contacts approach,…”
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Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps by Vallat, Rémi, Gassilloud, Rémy, Eychenne, Brice, Vallée, Christophe

“…In this paper, a new route for a selective deposition of thin oxide by atomic layer deposition is discussed. The proposed process is using super cycles made of…”
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Plasma deposition—Impact of ions in plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, and applications to area selective deposition by Vallée, Christophe, Bonvalot, Marceline, Belahcen, Samia, Yeghoyan, Taguhi, Jaffal, Moustapha, Vallat, Rémi, Chaker, Ahmad, Lefèvre, Gautier, David, Sylvain, Bsiesy, Ahmad, Possémé, Nicolas, Gassilloud, Rémy, Granier, Agnès

“…In this paper, the emerging role of ionic species in plasma assisted chemical deposition processes is discussed in detail for commemorating the Career of John…”
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Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme by Vallat, Rémi, Gassilloud, Rémy, Salicio, Olivier, El Hajjam, Khalil, Molas, Gabriel, Pelissier, Bernard, Vallée, Christophe

“…A selective deposition process for bottom-up approach was developed in a modified plasma enhanced atomic layer deposition (PEALD) sequence. As a case study, a…”
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Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance by Yeghoyan, Taguhi, Pesce, Vincent, Jaffal, Moustapha, Lefevre, Gauthier, Gassilloud, Rémy, Posseme, Nicolas, Bonvalot, Marceline, Vallée, Christophe

“…Area selective deposition via atomic layer deposition (ALD) has proven its utility in elementary nanopatterning processes. In the case of complex 3D patterned…”
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Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches by Jaffal, Moustapha, Yeghoyan, Taguhi, Lefèvre, Gauthier, Gassilloud, Rémy, Possémé, Nicolas, Vallée, Christophe, Bonvalot, Marceline

“…In this work, we focus on the development of topographically selective deposition (TSD) leading to local deposition on the vertical sidewalls of 3D structures…”
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Analysis of onset of dislocation nucleation during nanoindentation and nanoscratching of InP by Wasmer, Kilian, Gassilloud, Rémy, Michler, Johann, Ballif, Christophe

“…Nanoindentation and nanoscratching of an indium phosphide (InP) semiconductor surface was investigated via contact mechanics. Plastic deformation in InP is…”
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Hybrid‐RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions by Sassine, Gilbert, Nail, Cécile, Blaise, Philippe, Sklenard, Benoit, Bernard, Mathieu, Gassilloud, Rémy, Marty, Aurélie, Veillerot, Marc, Vallée, Christophe, Nowak, Etienne, Molas, Gabriel

“…Here, the impact of copper and oxygen vacancy balance in filament composition as a key factor for oxide‐based conductive bridge random access memories (hybrid…”
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Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS2 Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters by Hyot, Bérangère, Dussaigne, Amélie, Patouillard, Julien, Gassilloud, Rémy, Bernard, Mathieu, Cadot, Stéphane, Barbier, Frédéric, Veux, Guillaume, Gauthier, Nicolas, Vaxelaire, Nicolas, Bernier, Nicolas, Gianesello, Frédéric, Raynaud, Christine

“…Aluminum nitride (AlN)-based acoustic filters are key devices of radio-frequency communications. However, the performance of electroacoustic resonators remains…”
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Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V by PIALLAT, Fabien, BEUGIN, Virginie, GASSILLOUD, Remy, DUSSAULT, Laurent, PELISSIER, Bernard, LEROUX, Charles, CAUBET, Pierre, VALLEE, Christophe

“…Plasma enhanced atomic layer deposition (PEALD) TaCN deposited on HfO2 was studied by X-ray photoelectron spectroscopy (XPS) to understand the reactions taking…”
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Investigation of TiN thin film oxidation depending on the substrate temperature at vacuum break by Piallat, Fabien, Gassilloud, Remy, Caubet, Pierre, Vallée, Christophe

“…Due to the reduction of the thickness of the layers used in the advanced technology nodes, there is a growing importance of the surface phenomena in the…”
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Cleavage fracture of brittle semiconductors from the nanometer to the centimeter scale by WASMER, Kilian, BALLIF, Christophe, GASSILLOUD, Rémy, POUVREAU, Cédric, RABE, Rodolfo, MICHLER, Johann, BREGUET, Jean-Marc, SOLLETTI, Jean-Marie, KARIMIAND, Ayat, SCHULZ, Daniel

“…Matering the cleavage of semiconductors is important when processing III-IV optical devices. The objective of this paper is to present the fundamental…”
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Evaluation of plasma parameters on PEALD deposited TaCN by Piallat, Fabien, Beugin, Virginie, Gassilloud, Remy, Michallon, Philippe, Dussault, Laurent, Pelissier, Bernard, Asikainen, Timo, Maes, Jan Willem, Martin, François, Morin, Pierre, Vallée, Christophe

“…[Display omitted] ► Tuning TaCN deposited material from TaN-like to TaC-like was possible using plasma. ► Influence of plasma power on TaCN properties is…”
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Area selective deposition of TiO 2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme by Vallat, Rémi, Gassilloud, Rémy, Salicio, Olivier, El Hajjam, Khalil, Molas, Gabriel, Pelissier, Bernard, Vallée, Christophe

“…A selective deposition process for bottom-up approach was developed in a modified plasma enhanced atomic layer deposition (PEALD) sequence. As a case study, a…”
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Development and optimization of large-scale integration of 2D material in memristors by Ligaud, Clotilde, Van-Jodin, Lucie Le, Reig, Bruno, Trousset, Pierre, Brunet, Paul, Bertucchi, Michaël, Hellion, Clémence, Gauthier, Nicolas, Van-Hoan, Le, Okuno, Hanako, Dosenovic, Djordje, Cadot, Stéphane, Gassilloud, Remy, Jamet, Matthieu

“…Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with…”
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Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS 2 Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters by Hyot, Bérangère, Dussaigne, Amélie, Patouillard, Julien, Gassilloud, Rémy, Bernard, Mathieu, Cadot, Stéphane, Barbier, Frédéric, Veux, Guillaume, Gauthier, Nicolas, Vaxelaire, Nicolas, Bernier, Nicolas, Gianesello, Frédéric, Raynaud, Christine

“…Aluminum nitride (AlN)-based acoustic filters are key devices of radio-frequency communications. However, the performance of electroacoustic resonators remains…”
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Topographically selective deposition by Chaker, A., Vallee, C., Pesce, V., Belahcen, S., Vallat, R., Gassilloud, R., Posseme, N., Bonvalot, M., Bsiesy, A.

“…In this paper, we present a topographically Selective Deposition process which allows the vertical only coating of three-dimensional (3D) nano-structures. This…”
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Forming mechanism of Te-based conductive-bridge memories by Mendes, M. Kazar, Martinez, E., Marty, A., Veillerot, M., Yamashita, Y., Gassilloud, R., Bernard, M., Renault, O., Barrett, N.

“…•The resistive switching of Te-based conductive-bridge memories is investigated in a non-destructive way using hard X-ray photoelectron spectroscopy.•Results…”
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Hybrid-RRAM towards next generation of non-volatile memory: Coupling of oxygen vacancies and metal ions by Sassine, Gilbert, Nail, Cecile, Blaise, Philippe, Sklenard, Benoit, Bernard, Mathieu, Gassilloud, Rémy, Marty, Aurélie, Veillerot, Marc, Vallee, Christophe, Nowak, Etienne, Molas, Gabriel

“…In this paper, the impact of copper and oxygen vacancy balance in filament composition as a key factor for oxide-based CBRAM (Hybrid RRAM) performances is…”
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Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices by Micout, J., Rafhay, Q., Garros, X., Casse, M., Coignus, J., Pasini, L., Lu, C.-M V., Rambal, N., Fenouillet-Beranger, C., Brunet, L., Romano, G., Gassilloud, R., Batude, P., Vinet, M., Ghibaudo, G.

“…3D sequential integration requires top FETs processing with a low thermal budget (500°C). The analysis of the origin of the performance difference between Low…”
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