Low-energy electron-enhanced etching of HgCdTe

Low-energy electron-enhanced etching of HgCdTe

Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are illustrated. The LE4 mechanism is understood from a mechanistic study in terms of three etch variables: direct current (DC) bias, gas composition, and...

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Bibliographic Details
Published in:Journal of electronic materials Vol. 32; no. 7; pp. 677 - 685
Main Authors: JAEHWA KIM, KOGA, T. S, GILLIS, H. P, GOORSKY, Mark S, GARWOOD, Gerald A, VARESI, John B, RHIGER, David R, JOHNSON, Scott M
Format: Conference Proceeding Journal Article
Language:English
Published: New York, NY Institute of Electrical and Electronics Engineers 01-07-2003
Springer Nature B.V
Subjects:
Applied sciences
Cross-disciplinary physics: materials science; rheology
Electronics
Exact sciences and technology
Lithography, masks and pattern transfer
Materials science
Microelectronic fabrication (materials and surfaces technology)
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Plasma applications
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surface cleaning, etching, patterning
Surface treatments
Patterning
Anisotropic etching
Roughness
Electron beam
Etching
Epitaxial film
Experimental study
Surface treatment
Inorganic compound
Low energy
Microelectronic fabrication
low-energy electron-enhanced etching (LE4)
Transition metal compounds
II-VI semiconductors
Cadmium tellurides
Plasma etching
Molecular beam epitaxy
Mercury tellurides
CH4/H2/N2/Ar
HgCdTe
MESA technology
Photoresist
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Description
Summary:Low-energy electron-enhanced etching (LE4) is applied to HgCdTe to eliminate ion-induced surface damage. First, LE4 results for patterned samples are illustrated. The LE4 mechanism is understood from a mechanistic study in terms of three etch variables: direct current (DC) bias, gas composition, and sample temperature. For this paper, the effects of DC bias (electron energy) and gas composition (CH4 concentration) are summarized qualitatively, followed by quantitative evidence. Etch rate, the amount of polymer, surface stoichiometry, and surface roughness have specific relations with each etch variable under competition between pure LE4 and polymer deposition. 15 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-003-0052-z