Search Results - "GADIYAK, G. V."

Model and computer simulation results of defect transformation and decomposition of SiNx :H films during high temperature treatment by GADIYAK, G. V, GADIYAK, V. G, KOSINOVA, M. L, SALMAN, E. G

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A new theoretical model for the description of the degradation of silicon nitride films under high temperature annealing by Gadiyak, G.V., Gadiyak, V.G., Kosinova, M.L., Salman, E.G.

“…A macroscopic kinetic model of the defect transformation and decomposition of he SiN x :H films during high temperature annealing has been considered. The set…”
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Theoretical model for describing degradation of thin hydrogen-containing films by Gadiyak, G. V., Gadiyak, V. G., Kosinova, M. L., Sal’man, E. G.

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Model and computer simulation results of defect transformation and decomposition of SiN sub(x):H films during high temperature treatment by Gadiyak, G V, Gadiyak, V G, Kosinova, M L, Salman, E G

“…A macroscopic kinetic model of the defect transformation and decomposition of a silicon nitride SiN sub(x):H film during high temperature annealing is proposed…”
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Physical model and numerical results of dissociation kinetics of hydrogen-passivated Si/SiO2 interface defects by Gadiyak, G.V

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Theoretical model and computer simulation results of enhanced diffusion of high-temperature implanted aluminum in silicon carbide by Gadiyak, G.V.

“…The wide-spread use of silicon carbide (SiC) films in the production of microelectronic devices make predictions of the doping profiles during and/or after…”
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Calculation of the properties of small boron and aluminum clusters by Gadiyak, G. V., Morokov, Yu. N.

“…Previously abstracted from the original as item 9006-12-0801. Calculations were made of B sub n and Al sub n clusters where n = 2-7, 12 and 13. The most…”
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Modeling the hydrogen distribution accompanying electron injection in SiO2 films in strong electric fields by Gadiyak, G. V.

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Dislocation formation and gettering mechanism of impurity atoms close to the active region by Gadiyak, G.V.

“…High-energy beams are starting to play an important role in silicon device technology. The most important potential use is the formation of CMOS profiled tubs…”
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Diffusion of boron and phosphorus in silicon during high-temperature ion implantation by Gadiyak, G. V.

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Study of Convection in a Liquid with a Free Surface Using Exponential Fitting Discretization by CHEBLAKOVA, E. A., GADIYAK, G. V.

“…The two-dimensional flow of viscous incompressible liquid in a square cavity with a Tree boundary and differentially heated vertical sides is considered in the…”
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A new theoretical model for the description of the degradation of silicon nitride films under high temperature annealing by GADIYAK, G. V, GADIYAK, V. G, KOSINOVA, M. L, SALMAN, E. G

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Physical model and results of numerical simulation of the degradation of a Si/SiO2 structure as a result of annealing in vacuum by Gadiyak, G. V., Stathis, J. H.

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Calculation of bulk and surface electronic properties of diamond-like semiconductors by GADIYAK, G. V, KARPUSHIN, A. A, MOROKOV, YU. N, TOMASEK, M

“…Local density of states (LDS) calculations have been performed by the recursion method for a model diamond-like semiconductor. LDS have been obtained for the…”
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Local density of states of GaAs and InAs surfaces: ideal(111), (001) and (110) surfaces and monoatomic steps on the (111) and the (001) surface by GADIYAK, G. V, KARPUSHIN, A. A, KOROLENKO, I. N, MOROKOV, Y. N, SAZONOV, S. G, TOMASEK, M

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Convective Flow in an Upright Enclosed Square Cavity: A Comparison Exercise by CHEBLAKOVA, E. A., GADIYAK, G. V.

“…The problem concerning the convective flow of liquid in an upright enclosed square cavity with differentially heated vertical sides is considered in the…”
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Numerical simulation of the thermal oxidation of silicon in N2O ambient by Gadiyak, G.V, Korobitsina, J.L

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Physical model and numerical results of dissociation kinetics of hydrogen-passivated Si/SiO sub(2) interface defects by Gadiyak, G V

“…A simple model of thermal dissociation and recovery of hydrogen-passivated silicon defects at the Si/SiO sub(2) interface, such as P sub(b) - centers, during…”
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THE DEVELOPMENT OF THE RADIATION ENHANCED DIFFUSION MODEL OF BORON IN SILICON by Gadiyak, G.V., Blaghinin, D.E.

“…The radiation enhanced diffusion of implanted boron was modeled by considering the kinetic reaction between point defects, dislocations and boron atoms. The…”
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NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON by Gadiyak, G.V., Korobitsina, J.L., Kramarenko, V.I.

“…The model of the thermal oxidation of polycrystalline silicon is described. It includes parabolic equation system for the diffusion process of oxidant in…”
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